Forbidden transitions and the effective masses of electrons and holes in In1−xGaxAs/InP quantum wells with compressive strain

Abstract

Articles you may be interested inOptical determination of the electron effective mass of strain compensated In 0.4 Ga 0.6 As 0.995 N 0.005 ∕ Ga As single quantum well Modeling and analysis of photomodulated reflectance and double crystal x-ray diffraction measurements of tensilely strained InGaAs/InGaAsP quantum well structures Two types of forbidden transitions are identified in In 1Ϫx Ga x As/InP undoped quantum wells ͑QWs͒ with compressive strain by low-temperature ͑1.8 K͒ magneto-optical absorption. One of them is due to the interband transitions with different principal quantum numbers and is observable mainly in a low magnetic field and the other corresponds to P-and D-type exciton states and gets stronger as the magnetic field increases. By analyzing the forbidden transitions the in-plane effective masses of electrons (m e, * ) and heavy holes (m h, * ) are simultaneously determined, together with the z-direction ͑growth-direction͒ ones (m e,z * ,m h,z * ). The theoretically predicted relation among the electron effective masses ͓Sugawara et al., Phys. Rev. B 48, 8102 ͑1993͔͒, m e,⌫ 6 Ͻm e, * Ͻm e,z * , where m e,⌫ 6 is the band-edge electron effective mass of bulk material, is therefore verified. The difference between the values of m e,z * and m e, * is found to decrease as the strain in the QW drops. [This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to ] IP: 130.88.90.140 On: Tue, 25 Nov 2014 12:44:52where E A is the band-edge energy of the QW material, E e,n z and E h,n Ј z are the energy levels of the electrons and holes, respectively, n (nЈ) denotes the principal quantum number of the electron ͑hole͒ energy level, and E r represents the change to the exciton energy caused by the external magnetic field.As well established, E e,n z and E h,n Ј

Photoluminescence probing of interface evolution with annealing in InGa(N)As/GaAs single quantum wells

“…To check if the interdiffusion-induced narrowing of the QW layer is qualified for the blueshift, the ground-state transition energy is calculated with a square-well assumption. 43 The band offset is determined by the model-solid method, 34,35 and the dilute-N effect is estimated with the two-level repulsion model. 44,45 Figure 10 depicts the transition energy of In 0.375 Ga 0.625 As/GaAs and In 0.375 Ga 0.625 N 0.012 As 0.988 /GaAs SQWs with the transition energy of 7-nm-thick In 0.375 Ga 0.625 As/ GaAs SQW as reference.…”