(Pb, Sm)TiO₃ THIN FILMS PREPARED BY CHEMICAL SOLUTION DEPOSITION USING A Bi₂Ti₂O₇ BUFFER LAYER

Abstract

A thin-film bilayer structure consisting of polycrystalline Pb 0.85 Sm 0.1 TiO 3 and preferentially (111)-oriented Bi 2 Ti 2 O 7 were prepared using the chemical solution deposition technique. Thin films were deposited by spin-coating. The structural properties of the films were examined by X-ray diffraction. The surface morphology and quality were studied by using an atomic force microscope. The films exhibit a good insulating property and resistance to breakdown. The clockwise hysteresis curve is referred to as polarization type switching, and the memory window is about 3.5 V. The accumulation capacitance and dielectric loss decrease with the increased annealing temperature. The (Pb, Sm)TiO 3 /Bi 2 Ti 2 O 7 films in the "on" and "off" states are relatively stable.