n-AlGaAs/p-GaAs/n-GaN HETEROJUNCTION BIPOLAR TRANSISTOR: THE FIRST TRANSISTOR FORMED VIA WAFER FUSION

Estrada, Sarah M.; Hu, Evelyn L.; Mishra, Umesh K.

doi:10.1142/9789812562364_0014

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2007

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“…Wafer fusion (also called direct wafer bonding), on the other hand, can combine two materials with different lattice constants, crystal structures, or orientations [6]. AlGaAs/GaAs/GaN HBTs formed by wafer fusion have been proposed and demonstrated recently [7], [8]. Employing a low fusion temperature of 600 • C and inserting an unintentionally doped setback layer, a current gain of ∼2 was obtained [9].…”

Section: Introductionmentioning

confidence: 99%

DC Characteristics of AlGaAs/GaAs/GaN HBTs Formed by Direct Wafer Fusion

Lian

Xing

Wang

et al. 2007

IEEE Electron Device Lett.

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We have fabricated AlGaAs/GaAs/GaN heterojunction bipolar transistors (HBTs) formed by direct wafer fusion with different fusion temperatures. By employing a low wafer fusion temperature of 550 • C, current gains as high as ∼9 and output currents as high as ∼65 mA (emitter size of 100 × 120 µm 2 ) were obtained. The effective minority carrier lifetime in the base was estimated to have decreased ∼20 times due to the fusion process. In comparison, HBTs produced with higher wafer fusion temperatures (600 • C and 650 • C) exhibit lower current gains (∼2-3) and higher base-collector leakage currents.Index Terms-Gallium arsenide, gallium nitride, heterojunction bipolar transistor (HBT), wafer fusion.

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Section: Introductionmentioning

confidence: 99%