DC Characteristics of AlGaAs/GaAs/GaN HBTs Formed by Direct Wafer Fusion

Lian, Chuanxin; Xing, Huili Grace; Wang, C.S.; McCarthy, L.; Brown, David F.

doi:10.1109/led.2006.887932

Cited by 21 publications

(8 citation statements)

References 13 publications

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“…6) In addition to this major challenge, the preliminary investigations of GaN-based BJTs revealed that the surface energy band-bending of GaN needs to be taken into crucial consideration for GaN-collector bipolar transistor applications. 7,8) Considering the fundamental physics limit of realizing effective p-type doping in GaN, an alternative approach to tackle the p-type doping challenge in GaN-based BJTs development is to replace p-type nitride materials with other p-type semiconductor materials, such as silicon (Si), germanium (Ge), indium phosphide (InP), gallium arsenide (GaAs), etc. and employ these p-type materials as the base region of GaN-based bipolar transistors.…”

Section: Introductionmentioning

confidence: 99%

“…and employ these p-type materials as the base region of GaN-based bipolar transistors. Nevertheless, the lattice mismatch between these p-type materials and GaN prevented the epitaxial growth of GaN 9,10) and wafer bonding/fusion approach 7,8) from producing an abrupt junction/interface between GaN and the p-type semiconductors with a low interface density of states (DOS). The recently demonstrated semiconductor grafting approach, 11) which, in terms of the working mechanisms, fundamentally distinguishes itself from the heteroepitaxy and the wafer bonding/fusion approaches, has solved the lattice-mismatch challenge.…”

Section: Introductionmentioning

confidence: 99%

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Influences of ALD Al₂O₃ on the surface band-bending of c-plane, Ga-face GaN

Gong

Kim

et al. 2021

Jpn. J. Appl. Phys.

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The recently demonstrated approach of grafting n-type GaN with p-type Si or GaAs, by employing ultrathin Al2O3 at the interface, has shown the feasibility to overcome the poor p-type doping challenge of GaN. However, the surface band-bending of GaN that could be influenced by the Al2O3 has been unknown. In this work, the band-bending of c-plane, Ga-face GaN with ultrathin Al2O3 deposition at the surface of GaN was studied using X-ray photoelectron spectroscopy (XPS). The study shows that the Al2O3 can help suppress the upward band-bending of the c-plane, Ga-face GaN with a monotonic reduction trend from 0.48 eV down to 0.12 eV as the number of Al2O3 deposition cycles increases from 0 to 20. The study further shows that the band-bending can be mostly recovered after removing the Al2O3 layer, concurring that the introduction of ultrathin Al2O3 is the main reason for the surface band-bending modulation.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Influences of ALD Al₂O₃ on the surface band-bending of c-plane, Ga-face GaN

Gong

Kim

et al. 2021

Jpn. J. Appl. Phys.

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“…[1][2][3][4][5][6][7][8][9][10][11][12] High performance III-V MOSFETs require low source and drain (S/D) series resistance R S/D , which includes metal-semiconductor contact resistance. [13][14][15][16][17][18] To achieve low R S/D in III-V FETs, S/D engineering such as selective growth of in situ doped S/D materials [19][20][21] and self-aligned contacts have been employed.…”

mentioning

confidence: 99%

Reduction of Off-State Leakage Current in In0.7Ga0.3As Channel n-MOSFETs with Self-Aligned Ni-InGaAs Contact Metallization

Zhang

Guo

Lin

et al. 2011

Electrochem. Solid-State Lett.

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In 0.7 Ga 0.3 As channel n-MOSFETs (metal-oxide-semiconductor field-effect transistors) with Si-doped S/D and self-aligned NiInGaAs contact were demonstrated for the first time. The salicide-like metallization process employed a direct reaction between Ni and Si-doped InGaAs, followed by the removal of the unreacted Ni. As compared with n-MOSFETs with metallic Ni-InGaAs S/D (i.e. no Si doping in S/D), n-MOSFETs with Ni-InGaAs contact formed on Si-doped S/D show significantly improved OFFstate current I OFF in the linear and saturation regions.III-V materials such as Indium Gallium Arsenide (InGaAs) and Indium Arsenide (InAs) have significantly higher electron mobility than Silicon (Si) and are attractive for future high speed low power logic applications. 1-12 High performance III-V MOSFETs require low source and drain (S/D) series resistance R S/D , which includes metal-semiconductor contact resistance. 13-18 To achieve low R S/D in III-V FETs, S/D engineering such as selective growth of in situ doped S/D materials 19-21 and self-aligned contacts have been employed. [17][18]21,22 Metallic S/D is another attractive option 23-26 and should preferably be self-aligned to the gate stack. InGaAs channel n-MOSFETs with self-aligned metallic Ni-InGaAs S/D have been demonstrated recently. 25,26 However, the n-MOSFETs with metallic S/D suffer from high leakage current at metal/semiconductor junctions in S/D regions, leading to high drain to source and drain to body leakage current. Low drain junction leakage is needed to achieve low standby power consumption.In this work, In 0.7 Ga 0.3 As channel n-MOSFETs with Si-doped S/ D and self-aligned Ni-InGaAs contact were demonstrated for the first time. The spacer-less metallization process is similar to salicidation and drives the diffusion of Ni into InGaAs for reaction to form a conductive material. S/D implant (Si) and dopant activation anneal were performed before the metallization to form n-InGaAs/ p-InGaAs junction. The n-MOSFETs with Si-doped S/D and NiInGaAs contact show significantly suppressed off-state current I OFF as compared with n-MOSFETs with metallic Ni-InGaAs S/D. Device FabricationThe fabrication process flow for In 0.7 Ga 0.3 As channel n-MOSFETs with self-aligned Ni-InGaAs contacts is summarized and illustrated in Fig. 1. 2-in. p-type (N A $1 Â 10 19 cm À3 ) InP wafer was used as starting substrates. A 500 nm thick In 0.53 Ga 0.47 As with p-type (Zn doped) doping concentration N A of 2 Â 10 17 cm À3 and a 20 nm thick In 0.7 Ga 0.3 As with N A of 2 Â 10 16 cm À3 were sequentially grown. After pregate cleaning using HCl and NH 4 OH solution, (NH 4 ) 2 S solution was used to passivate the In 03.7 Ga 0.3 As surface for suppression of surface oxidation. The sample was then quickly loaded into an atomic layer deposition (ALD) tool and $7 nm of Al 2 O 3 was deposited. TaN gate electrode (100 nm thick) was deposited by sputtering, patterned by optical lithography and etched by Cl 2 -based plasma.After gate stack formation, one batch of devices (implanted devices) w...

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“…Wafer bonding technologies 5,9) such as surface activated bonding (SAB) 10) provide a practical solution to overcoming such difficulties. Several authors reported on wafer-bondingbased GaAs=GaN, 11) GaAs=4H-SiC, 12,13) and Si=4H-SiC junctions. [14][15][16][17] We previously fabricated Si=4H-SiC pn and nn junctions by SAB, and found that ≈6-nm-thick amorphous-like layers observed at the as-bonded Si=SiC interfaces were recrystallized and the reverse-bias characteristics as well as the ideality factors were improved when the junctions were annealed at 1000 °C for 60 s in N 2 ambient.…”

Section: Introductionmentioning

confidence: 99%

Transport characteristics of minority electrons across surface-activated-bonding based p-Si/n-4H-SiC heterointerfaces

Shigekawa

Shimizu

Liang

et al. 2018

Jpn. J. Appl. Phys.

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We investigate the transport properties of minority electrons across p-Si/n-4H-SiC interfaces fabricated using surface activated bonding. The transport properties along each direction are examined by measuring the photoresponse (PR) of p-Si/n-4H-SiC heterojunctions and characterizing 4H-SiC/Si heterojunction bipolar transistors (HBTs). The photoyield obtained in PR measurements is sensitive to the concentration of acceptors in p-Si and reverse-bias voltages, which indicates that the energy of optically excited electrons in p-Si is first relaxed and then they are driven to n-SiC through the tunneling process. By the postprocess annealing of HBTs, the properties of emitter/base interfaces are improved so that the current gain is drastically increased, which means that the Si/4H-SiC interfaces are in metastable states when the device process is completed. A maximum current gain of >10 is demonstrated.

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DC Characteristics of AlGaAs/GaAs/GaN HBTs Formed by Direct Wafer Fusion

Cited by 21 publications

References 13 publications

Influences of ALD Al₂O₃ on the surface band-bending of c-plane, Ga-face GaN

Influences of ALD Al₂O₃ on the surface band-bending of c-plane, Ga-face GaN

Reduction of Off-State Leakage Current in In0.7Ga0.3As Channel n-MOSFETs with Self-Aligned Ni-InGaAs Contact Metallization

Transport characteristics of minority electrons across surface-activated-bonding based p-Si/n-4H-SiC heterointerfaces

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DC Characteristics of AlGaAs/GaAs/GaN HBTs Formed by Direct Wafer Fusion

Cited by 21 publications

References 13 publications

Influences of ALD Al2O3 on the surface band-bending of c-plane, Ga-face GaN

Influences of ALD Al2O3 on the surface band-bending of c-plane, Ga-face GaN

Reduction of Off-State Leakage Current in In0.7Ga0.3As Channel n-MOSFETs with Self-Aligned Ni-InGaAs Contact Metallization

Transport characteristics of minority electrons across surface-activated-bonding based p-Si/n-4H-SiC heterointerfaces

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Influences of ALD Al₂O₃ on the surface band-bending of c-plane, Ga-face GaN

Influences of ALD Al₂O₃ on the surface band-bending of c-plane, Ga-face GaN