Focused-ion-beam-induced insulator deposition at decreased beam current density

Abramo, Marsha; Adams, Edward N.; Gibson, M.; Hahn, Loren; Doyle, Andrew F.

doi:10.1109/relphy.1997.584240

Cited by 3 publications

(5 citation statements)

References 4 publications

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“…This shift of the Si-0 stretch to higher wavenumbers is contrary to the earlier finding of Abramo et aZ [6], which showed a shift to lower wavenumbers in transmission mode. The MFTIR spectra showed no evidence of C-H or -SiH stretching.…”

Section: Electrical Characterizationcontrasting

confidence: 99%

“…The RBS results are expressed in terms of atomic %. The RBS results indicate that while the Si:O ratio in the films is basically stoichiometric, a significant amount of Ga is incorporated into the films, similar to the previously reported results for insulators deposited from siloxane and oxygen [6]. The surface of the insulator deposit is depleted of Ga relative to the bulk of the film as has been observed previously [6].…”

Section: Electrical Characterizationsupporting

confidence: 88%

“…This could be achieved by performing a clean-up mill after depositing the top electrode, or by using a different process, such as lithographic masking and sputter deposition, to produce the top contacts. The REFF of the FIB-insulators produced in this study are 3 -5 orders of magnitude smaller than those reported previously for silxoane-based FIB-insulators [6]. However, when the differences in geometry between the two types of test structures are taken into account, the effective resistivities calculated from the resistance data are found to be quite similar (-lo9 pQ-cm).…”

Section: Discussioncontrasting

confidence: 67%

“…The percentage of 0 was less than stoichiometric and the fraction of C was quite large [4]. Marsha Abramo and coworkers [2,5,6] have studied the electrical and chemical properties of FIB-insulator materials formed by using a siloxane precursor codeposited with oxygen. Their test approach uses FIB micromachining to create a FIB repair in a 2-level metal structure.…”

Section: Introductionmentioning

confidence: 99%

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Electrical and chemical characterization of FIB-deposited insulators

Campbell¹,

Tanner²,

Soden

et al. 1997

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The electrical and chemical properties of insulators produced by codeposition of siloxane compounds or TEOS with oxygen in a focused ion beam (FIB) system were investigated. Metal-insulator-metal capacitor structures were fabricated and tested. Specifically, leakage current and breakdown voltage were measured and used to calculate the effective resistance and breakdown field. Capacitance measurements were performed on a subset of the structures. It was found that the siloxanebased FIB-insulators had superior electrical properties to those based on TEOS.Microbeam Rutherford backscattering spectrometry analysis and Fourier transform infrared spectroscopy were used to characterize the films and to help understand the differences in electrical behavior as a funcGon of gas chemistry and deposition conditions. Finally, a comparison is made between the results presented here, previous results for FIB-deposited insulators, and typical thermally-grown gate oxides and interlevel dielectric SiOz insulators.

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Section: Electrical Characterizationcontrasting

confidence: 99%

Section: Electrical Characterizationsupporting

confidence: 88%

Section: Discussioncontrasting

confidence: 67%

Section: Introductionmentioning

confidence: 99%

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Electrical and chemical characterization of FIB-deposited insulators

Campbell¹,

Tanner²,

Soden

et al. 1997

Self Cite

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“…The non-linear shape of the I-V curves shown inFig. 5is very similar to those reported by Abramo[6] and Baker[3]. Breakdown was recorded when the current was ten times higher than the previous step or if the current met the compliance value, 100 mA.…”

supporting

confidence: 84%

Electrical and Chemical Characterization of FIB-Deposited Insulators

Campbell

Tanner

Soden

et al. 1997

International Symposium for Testing and Failure Analysis

Self Cite

View full text Add to dashboard Cite

The electrical and chemical properties of insulators produced by codeposition of siloxane compounds or TEOS with oxygen in a focused ion beam (FIB) system were investigated. Metal-insulator-metal capacitor structures were fabricated and tested. Specifically, leakage current and breakdown voltage were measured and used to calculate the effective resistance and breakdown field. Capacitance measurements were performed on a subset of the structures. It was found that the siloxanebased FIB-insulators had superior electrical properties to those based on TEOS. Microbeam Rutherford backscattering spectrometry analysis and Fourier transform infrared spectroscopy were used to characterize the films and to help understand the differences in electrical behavior as a function of gas chemistry and deposition conditions. Finally, a comparison is made between the results presented here, previous results for FIB-deposited insulators, and typical thermally-grown gate oxides and interlevel dielectric Si02 insulators.

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Reliability test results for W FIB interconnect structures

Zaragoza

Zhang²,

Abramo³

1999 IEEE International Integrated Reliability Workshop Final Report (Cat. No. 99TH8460)

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Focused-ion-beam-induced insulator deposition at decreased beam current density

Cited by 3 publications

References 4 publications

Electrical and chemical characterization of FIB-deposited insulators

Electrical and chemical characterization of FIB-deposited insulators

Electrical and Chemical Characterization of FIB-Deposited Insulators

Reliability test results for W FIB interconnect structures

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