Focused electron beam induced deposition of nickel

Abstract

Electron postgrowth irradiation of platinum-containing nanostructures grown by electron-beam-induced deposition from Pt ( P F 3 ) 4Investigation of morphological changes in platinum-containing nanostructures created by electron-beam-induced deposition J.Focused electron beam induced depositions of nickel-containing materials obtained by using bis͑methylcyclopentadienyl͒nickel͑II͒ Ni͑C 5 H 4 CH 3 ͒ 2 and tetrakis͑trifluorophosphine͒nickel͑0͒ Ni͑PF 3 ͒ 4 as precursors, were compared in terms of chemical composition and electrical resistivity. Ni͑PF 3 ͒ 4 decomposed into higher Ni content materials than that obtained with Ni͑C 5 H 4 CH 3 ͒ 2 ͑typically 40 and 10 at. %, respectively͒. Attempts of increasing the Ni content by injecting controlled flows of molecular oxygen or hydrogen simultaneously to the precursor vapors resulted in all cases in the increase of incorporated oxygen only. The lowest electrical resistivities of 150 nm wide lines obtained from Ni͑C 5 H 4 CH 3 ͒ 2 and Ni͑PF 3 ͒ 4 were 1 and 1 ϫ 10 −3 ⍀ cm, respectively. The electrical resistivity of the latter lines showed an e ͑−T͒ dependence with temperature, typical of magnetic heterogeneous alloys and granular alloys containing insulating particles. Transmission electron microscopy investigations of a freestanding rod obtained from Ni͑PF 3 ͒ 4 showed a nanocrystalline structure of nickel grains surrounded by a partially amorphous cladding.

Understanding the electron-stimulated surface reactions of organometallic complexes to enable design of precursors for electron beam-induced deposition

“…4a) produces nonvolatile carbon-containing products, suggesting that g 5 -cyclopentadienyl ligands will be inappropriate for EBID precursors. Consistent with this idea, high carbon contents are observed for EBID structures created from organometallic precursors containing g 5 -cyclopentadienyl ligands [2,23,24,39]. In the case of Co(CO) 3 NO (Fig.…”

Creating pure nanostructures from electron-beam-induced deposition using purification techniques: a technology perspective

“…The attempt was described as 'successful': the amount of tungsten was increased from an unspecified amount to 58 at.%. Besides this, the only recent attempt (Perentes et al [30]) at mixing H 2 and EBID (the idea being to react with C from the dissociated fragments and form volatile CH 4 ) resulted in an interesting observation: when H 2 was introduced in the SEM chamber, the background (residual gas) level of H 2 O was tripled (as measured by a residual gas analyzer). One could presume that there is a competition between H 2 O and H 2 for adsorption sites on all surfaces in the SEM, and this experiment suggests that H 2 wins.…”

“…• C, Cu from Cu-DMBhfac [22], Fe from Fe(CO) 5 in a UHV set-up [46], Ga from D 2 GaN 3 [25], Ge from Ge 2 H 6 [26], Ir from [IrCl(PF 3 ) 2 ] 2 [27], Mn from MnMeCp(CO) 3 [28], Mo from Mo(CO) 6 [29], Ni from Ni(PF 3 ) 4 [30], Os from Os 3 (CO) 12 [31], Pb from Pb(CH 3 ) 4 , Pd from Pd(ac) with annealing to 250…”

Atomic radical abatement of organic impurities from electron beam deposited metallic structures

“…The introduction of reactive species, such as water, oxygen, or hydrogen gas, during deposition is also capable of increasing the metal content of FEBIP deposits. 26,47,48 For example, in the case of gold nanostructures deposited from Au III ͑hfac͒Me 2 , this type of abatement strategy has resulted in a metallic content that increased from 3% to 50%. 49 However, complete purification has yet to be achieved and, furthermore, for some metals the use of oxidizing species promotes metal-oxide formation.…”

“…[15][16][17][18][19][20][21] Various metal-containing nanostructures, for example, platinum, nickel, tungsten, iron and copper, have been successfully fabricated using FEBIP. [22][23][24][25][26] The deposition of gold nanostructures is of particular interest due to their potential applications as active components in sensors, field emitter devices, quantum optical systems, and nanoelectronic devices. [27][28][29][30] For gold deposition, the most common organometallic precursors are dimethyl͑hexafluoroacetylacetonate͒ gold͑III͒ ͓Au III ͑hfac͒Me 2 ͔, dimethyl-͑trifluoroacetylacetonate͒ gold͑III͒ ͓Au III ͑tfac͒ Me 2 ͔, and dimethyl-͑acetylacetonate͒ gold͑III͒ ͓Au III ͑acac͒Me 2 ͔.…”