Fluorine implantation effects on Ta2O5 dielectrics on polysilicon treated with post rapid thermal annealing

Chen, Hsiang; Kao, Chiang; Huang, Bo; Lo, Wen Shih

doi:10.1016/j.apsusc.2013.07.004

Cited by 3 publications

(1 citation statement)

References 19 publications

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“…[44,45] Moreover, Ta 2 O 5 has good thermal stability, which is beneficial for modifying post-annealing treatment of Ga 2 O 3 devices. [46] As a result, the traditional SiO 2 gate dielectric in annealed Sn-doped Ga 2 O 3 FET is replaced by Ta 2 O 5 with a thickness of around 20 nm. Figure 3b shows the transfer characteristics of the annealed Sn-doped Ga 2 O 3 FET on Ta 2 O 5 gate dielectric with a lowered operating voltage to demonstrate a low threshold voltage (V TH ) of 3.30 V and a small subthreshold swing (SS) of 0.39 V dec À1 , which are over 30 times and nearly 40 times (Table 1) lower than the SiO 2 -based FETs, respectively.…”

Section: Resultsmentioning

confidence: 99%

4 inch Gallium Oxide Field‐Effect Transistors Array with High‐k Ta₂O₅ as Gate Dielectric by Physical Vapor Deposition

Liu,

Li,

Yang

et al. 2024

Physica Rapid Research Ltrs

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Field‐effect transistors (FETs) with ultra‐wide bandgap semiconductor Ga2O3 have been fabricated by physical vapor deposition with advantages of low cost, wafer scale, and rapid production. The insulator‐like pristine Ga2O3 is converted to semiconductor by co‐sputtering Sn with post‐annealing, which demonstrates a 5.6 × 107 times higher on‐state current. Importantly, this Sn‐doped Ga2O3 sample shows a high breakdown voltage near 500 V. Furthermore, a 4 inch array of Sn‐doped Ga2O3 FETs with high‐k Ta2O5 gate dielectric has been fabricated on a silicon substrate, successfully showing a large on‐current density of 1.3 mA mm−1, a high ION/IOFF of 2.5 × 106, and a low threshold voltage of 3.9 V, which are extracted from the average 350 devices. This work paves a promising way for Ga2O3‐based nanoelectronics to serve medium‐high voltage with low cost, rapid, and wafer‐scale production.

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Section: Resultsmentioning

confidence: 99%

4 inch Gallium Oxide Field‐Effect Transistors Array with High‐k Ta₂O₅ as Gate Dielectric by Physical Vapor Deposition

Liu,

Li,

Yang

et al. 2024

Physica Rapid Research Ltrs

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Multi-analyte biosensors on a CF4 plasma treated Nb2O5-based membrane with an extended gate field effect transistor structure

Kao

Chen

Kuo

et al. 2014

Sensors and Actuators B: Chemical

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Enhanced switching stability in Ta2O5 resistive RAM by fluorine doping

Sedghi

Brunell

et al. 2017

Applied Physics Letters

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The effect of fluorine doping on the switching stability of Ta2O5 resistive random access memory devices is investigated. It shows that the dopant serves to increase the memory window and improve the stability of the resistive states due to the neutralization of oxygen vacancies. The ability to alter the current in the low resistance state with set current compliance coupled with large memory window makes multilevel cell switching more favorable. The devices have set and reset voltages of <1 V with improved stability due to the fluorine doping. Density functional modeling shows that the incorporation of fluorine dopant atoms at the two-fold O vacancy site in the oxide network removes the defect state in the mid bandgap, lowering the overall density of defects capable of forming conductive filaments. This reduces the probability of forming alternative conducting paths and hence improves the current stability in the low resistance states. The doped devices exhibit more stable resistive states in both dc and pulsed set and reset cycles. The retention failure time is estimated to be a minimum of 2 years for F-doped devices measured by temperature accelerated and stress voltage accelerated retention failure methods.

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Fluorine implantation effects on Ta2O5 dielectrics on polysilicon treated with post rapid thermal annealing

Cited by 3 publications

References 19 publications

4 inch Gallium Oxide Field‐Effect Transistors Array with High‐k Ta₂O₅ as Gate Dielectric by Physical Vapor Deposition

4 inch Gallium Oxide Field‐Effect Transistors Array with High‐k Ta₂O₅ as Gate Dielectric by Physical Vapor Deposition

Multi-analyte biosensors on a CF4 plasma treated Nb2O5-based membrane with an extended gate field effect transistor structure

Enhanced switching stability in Ta2O5 resistive RAM by fluorine doping

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Fluorine implantation effects on Ta2O5 dielectrics on polysilicon treated with post rapid thermal annealing

Cited by 3 publications

References 19 publications

4 inch Gallium Oxide Field‐Effect Transistors Array with High‐k Ta2O5 as Gate Dielectric by Physical Vapor Deposition

4 inch Gallium Oxide Field‐Effect Transistors Array with High‐k Ta2O5 as Gate Dielectric by Physical Vapor Deposition

Multi-analyte biosensors on a CF4 plasma treated Nb2O5-based membrane with an extended gate field effect transistor structure

Enhanced switching stability in Ta2O5 resistive RAM by fluorine doping

Contact Info

Product

Resources

About

4 inch Gallium Oxide Field‐Effect Transistors Array with High‐k Ta₂O₅ as Gate Dielectric by Physical Vapor Deposition

4 inch Gallium Oxide Field‐Effect Transistors Array with High‐k Ta₂O₅ as Gate Dielectric by Physical Vapor Deposition