Fluorinated Diamond-Like Carbon Coating as Antisticking Layer on Nanoimprint Mold

Nakamatsu, Ken−ichiro; Yamada, Noriko; Kanda, Kazuhiro; Haruyama, Yuichi; Matsui, Shinji

doi:10.1143/jjap.45.l954

Cited by 50 publications

(25 citation statements)

References 12 publications

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“…It does not suffer from excessive hardening at high temperatures, does not attach to nanoimprint mold and does not require high pressure such as 1,000 kgf/cm 2 . A previous study from Nakamatsu et al 14 demonstrated that AZ1500 series photoresist requires high pressure (10 MPa), high temperature (150°C) and attaches to the mold. According to Kang et al, 15 hydrogen silsesquioxane (HSQ) at room temperature can be patterned by a 40-MPa press without damaging the underlying AZ film.…”

Section: Az1518 Versus Su-8mentioning

confidence: 99%

Molds and Resists Studies for Nanoimprint Lithography of Electrodes in Low-Voltage Polymer Thin-Film Transistors

Cavallari

Zanchin

Pojar

et al. 2014

Journal of Elec Materi

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A low-cost patterning of electrodes was investigated looking forward to replacing conventional photolithography for the processing of low-operating voltage polymeric thin-film transistors. Hard silicon, etched by sulfur hexafluoride and oxygen gas mixture, and flexible polydimethylsiloxane imprinting molds were studied through atomic force microscopy (AFM) and field emission gun scanning electron microscopy. The higher the concentration of oxygen in reactive ion etching, the lower the etch rate, sidewall angle, and surface roughness. A concentration around 30 % at 100 mTorr, 65 W and 70 sccm was demonstrated as adequate for submicrometric channels, presenting a reduced etch rate of 176 nm/min. Imprinting with positive photoresist AZ1518 was compared to negative SU-8 2002 by optical microscopy and AFM. Conformal results were obtained only with the last resist by hot embossing at 120°C and 1 kgf/cm 2 for 2 min, followed by a 10 min post-baking at 100°C. The patterning procedure was applied to define gold source and drain electrodes on oxide-covered substrates to produce bottom-gate bottom-contact transistors. Poly(3-hexylthiophene) (P3HT) devices were processed on high-j titanium oxynitride (TiO x N y ) deposited by radiofrequency magnetron sputtering over indium tin oxide-covered glass to achieve low-voltage operation. Hole mobility on micrometric imprinted channels may approach amorphous silicon ($0.01 cm 2 /V s) and, since these devices operated at less than 5 V, they are not only suitable for electronic applications but also as sensors in aqueous media.

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Section: Az1518 Versus Su-8mentioning

confidence: 99%

Molds and Resists Studies for Nanoimprint Lithography of Electrodes in Low-Voltage Polymer Thin-Film Transistors

Cavallari

Zanchin

Pojar

et al. 2014

Journal of Elec Materi

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“…On the other hand, Fluorinated diamond-like carbon (F-DLC) has attractive properties, such as high hardness and high detachability. Nakamatsu and Yamada et al reported that F-DLC can be applied as an antisticking layer in NIL 4,5) . A schematic of the demolding process in NIL is shown in Fig.…”

Section: Introductionmentioning

confidence: 99%

Evaluation of Fluorinated Diamond Like Carbon as Antisticking Layer by Scanning Probe Microscopy

Okada

Iwasa

Nakamatsu

et al. 2008

J. Photopol. Sci. Technol.

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“…DLC film can reduce the adhesion and friction forces, due its low surface energy and it is also resistant to wear [26]. DLC films can readily be deposited on mold materials such as Si, quartz, and even polymeric film using chemical vapor deposition (CVD) for thermal and UV NIL [27][28][29][30]. DLC film can be coated on the mold patterns, and nanoscale patterns can be fabricated directly on the DLC surface.…”

Section: Methods For Controlling the Adhesion Energymentioning

confidence: 99%

Tribology issues in nanoimprint lithography

Kim

Lee

et al. 2010

J Mech Sci Technol

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Nanoimprint lithography (NIL) is one of the most promising technologies for nanofabrication because it can create nano-and microscale structures and devices in a cost-effective manner. In the NIL process, a mold with patterns on its surface comes in contact with a polymer film on a substrate. The patterns are transferred to the polymer film and then the mold is separated from the film. Mechanical contact between the mold and the polymer film, and between the film and the substrate, is inevitable. In some cases, during the separation process, adhesion and friction forces at the interfaces can deform and fracture the transferred patterns and detach the polymer film from the substrate. Thus, controlling the adhesion and friction between the materials in contact is very important in achieving a successful pattern transfer and making the NIL process a robust nanofabrication technique. Many theoretical and experimental research efforts have been made to clarify the tribological phenomena in NIL and to reduce defects due to adhesion and friction. This article describes the tribological problems encountered and reviews the related research.

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Fluorinated Diamond-Like Carbon Coating as Antisticking Layer on Nanoimprint Mold

Cited by 50 publications

References 12 publications

Molds and Resists Studies for Nanoimprint Lithography of Electrodes in Low-Voltage Polymer Thin-Film Transistors

Molds and Resists Studies for Nanoimprint Lithography of Electrodes in Low-Voltage Polymer Thin-Film Transistors

Evaluation of Fluorinated Diamond Like Carbon as Antisticking Layer by Scanning Probe Microscopy

Tribology issues in nanoimprint lithography

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