Fluorescent SiC as a new material for white LEDs

Syväjärvi, Mikael; Müller, Julian; Sun, Jianwu; Grivickas, V.; Ou, Yiyu; Jokubavičius, Valdas; Hens, Philip; Kaisr, M.; Ariyawong, Kanaparin; Gulbinas, Karolis; Liljedahl, Rickard; Linnarsson, Margareta K.; Kamiyama, Satoshi; Wellmann, Peter J.; Spiecker, Erdmann; Ou, Haiyan

doi:10.1088/0031-8949/2012/t148/014002

Cited by 36 publications

(21 citation statements)

References 22 publications

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“…Silicon is the workhorse for information technologies and photovoltaic photon harvesting, while SiC is a promising material for high power, high temperature and high frequency applications, because of its extreme thermal and chemical stability together with the large electron saturation velocity and mobility [3,4] and SiC has applications in light-emitting diodes [2][3][4], temperature sensors [5] and as neutron detectors [6,7]. The most stable of about 100 different SiC polytypes, the hexagonal 6H-SiC containing six SiC pairs per unit cell with the stacking sequence ABCACB [8] is the subject of this study.…”

Section: Introductionmentioning

confidence: 99%

Thermal evolution of the band edges of 6H-SiC: X-ray methods compared to the optical band gap

Miedema

Beye

Schiwietz

et al. 2014

Journal of Electron Spectroscopy and Related Phenomena

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The band gap of semiconductors like silicon and silicon carbide (SiC) is the key for their device properties. In this research, the band gap of 6H-SiC and its temperature dependence were analyzed with silicon 2p x-ray absorption spectroscopy (XAS), x-ray emission spectroscopy (XES) and resonant inelastic x-ray scattering (RIXS) allowing for a separate analysis of the conduction-band minimum (CBM) and valence-band maximum (VBM) components of the band gap. The temperature-dependent asymmetric band gap shrinking of 6H-SiC was determined with a valence-band slope of +2.45x10 -4 eV/K and a conduction-band slope of -1.334x10 -4 eV/K. The apparent asymmetry, e.g., that two thirds of the band-gap shrinking with increasing temperature is due to the VBM evolution in 6H-SiC, is similar to the asymmetry obtained for pure silicon before. The overall band gap temperature-dependence determined with XAS and non-resonant XES is compared to temperature-dependent optical studies. The core-excitonic binding energy appearing in the Si 2p XAS is extracted as the main difference. In addition, the energy loss of the onset of the first band in RIXS yields to values similar to the optical band gap over the tested temperature range.

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Section: Introductionmentioning

confidence: 99%

Thermal evolution of the band edges of 6H-SiC: X-ray methods compared to the optical band gap

Miedema

Beye

Schiwietz

et al. 2014

Journal of Electron Spectroscopy and Related Phenomena

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“…[2]. To investigate the optimized dopant concentrations of N and B, five samples with varied N and B concentrations were studied.…”

Section: Resultsmentioning

confidence: 99%

Fluorescent SiC for white light-emitting diodes

Kamiyama

et al. 2012

Asia Communications and Photonics Conference

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“…In particular semiconductors like crystalline silicon and silicon carbide (SiC) are important materials. Whereas silicon is the workhorse for information technologies and photovoltaic photon harvesting, SiC is a promising material for high power, high temperature and high frequency applications, because of its extreme thermal and chemical stability together with the large electron saturation velocity and mobility [21,22] and has applications in light-emitting diodes [21][22][23], temperature sensors [24] and as neutron detectors [25,26] and recently intrinsic defects in SiC have been shown to be single-photon sources at room temperature, which is promising for applications in quantum information processing [27,28]. The most stable of about 100 different polytypes, the hexagonal 6H-SiC, containing six SiC pairs per unit cell and having stacking sequence ABCACB [29] is the subject of this study.…”

Section: Introductionmentioning

confidence: 99%

“…The most stable of about 100 different polytypes, the hexagonal 6H-SiC, containing six SiC pairs per unit cell and having stacking sequence ABCACB [29] is the subject of this study. The importance of electron-phonon scattering in SiC is illustrated by the fact that SiC light emitters have been developed [22,23], despite the fact that these materials have an indirect band gap, which generally makes light emission inefficient. It is not exactly known why SiC compounds have such a high efficiency compared to other indirect band gap materials, but one could speculate that the electron-phonon scattering supports fluorescent recombination.…”

Section: Introductionmentioning

confidence: 99%

The angular- and crystal-momentum transfer through electron–phonon coupling in silicon and silicon-carbide: similarities and differences

Miedema¹,

Beye²,

Schiwietz³

et al. 2014

New J. Phys.

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Electron-phonon scattering has been studied for silicon carbide (6H-SiC) with resonant inelastic x-ray scattering at the silicon 2p edge. The observed electron-phonon scattering yields a crystal momentum transfer rate per average phonon in 6H-SiC of 1.8 fs −1 while it is 0.2 fs −1 in crystalline silicon. The angular momentum transfer rate per average phonon for 6H-SiC is 0.1 fs −1 , which is much higher than 0.0035 fs −1 obtained for crystalline silicon in a previous study. The higher electron-phonon scattering rates in 6H-SiC are a result of the larger electron localization at the silicon atoms in 6H-SiC as compared to crystalline silicon. While delocalized valence electrons can screen effectively (part of) the electron-phonon interaction, this effect is suppressed for 6H-SiC in comparison to crystalline silicon. Smaller contributions to the difference in electron-phonon scattering rates between 6H-SiC and silicon arise from the lower atomic mass of carbon versus silicon and the difference in local symmetry.

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Fluorescent SiC as a new material for white LEDs

Cited by 36 publications

References 22 publications

Thermal evolution of the band edges of 6H-SiC: X-ray methods compared to the optical band gap

Thermal evolution of the band edges of 6H-SiC: X-ray methods compared to the optical band gap

Fluorescent SiC for white light-emitting diodes

The angular- and crystal-momentum transfer through electron–phonon coupling in silicon and silicon-carbide: similarities and differences

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