2012
DOI: 10.1007/s10909-012-0466-1
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Fluctuator Model of Memory Dip in Hopping Insulators

Abstract: We show that the non-equilibrium dynamic in two-dimensional hopping insulators close to metal-dielectric transition is sensitive to electric fields confinement inside the sample, which leads to a nearly thermally activated conductance behavior and a strong non-equilibrium conductance response to the gate voltage, including a memory dip in a field dependence of conductance.

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Cited by 2 publications
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“…We expect that LI is relevant over a wide temperature range [42], where a hopping distance controlling the variable range hopping logarithmically depends on the temperature [26]. The long-range character of the LI is likely to enhance the importance of the simultaneous many-electron jumps [43], which may be relevant for the understanding of glassy relaxation in electronic systems [44,45]. The important subclass of 2D systems with high dielectric permittivity are superconducting films in the critical vicinity of the SIT.…”
mentioning
confidence: 99%
“…We expect that LI is relevant over a wide temperature range [42], where a hopping distance controlling the variable range hopping logarithmically depends on the temperature [26]. The long-range character of the LI is likely to enhance the importance of the simultaneous many-electron jumps [43], which may be relevant for the understanding of glassy relaxation in electronic systems [44,45]. The important subclass of 2D systems with high dielectric permittivity are superconducting films in the critical vicinity of the SIT.…”
mentioning
confidence: 99%