Floating memristor and inverse memristor emulation configurations with electronic/resistance controllability

Integrable emulation of a floating incremental/decremental inverse memristor for memristor bandwidth extension

“…7. Notably, this memristor emulator demonstrates a satisfactory PHL response up to 1500 kHz for specific simulation parameters detailed in [14]. Fig.…”

“…This frequency range can be determined by judiciously adjusting the values of passive elements associated with the inverse memristor emulator circuit. To validate this application of the presented inverse memristor, we have selected the floating memristor emulator previously documented in [14]. This emulator, based on the modified voltage differencing current conveyor (MVDCC), is depicted in Fig.…”

“…7. Transient v-i characteristics of the memristor emulator proposed in [14] Subsequently, we interconnect the presented inverse memristor emulator and the memristor emulator depicted in Fig. 6, placing them in parallel.…”

“…Consequently, circuit designers and theorists have shown little interest in exploring its properties and potential realization approaches. Nevertheless, literature does document some circuit configurations [9][10][11][12][13][14] for the inverse memristor emulator, as detailed in Table 1.…”

Electronically Adjustable Grounded Memcapacitor Emulator Based on Single Active Component with Variable Switching Mechanism

“…Whether the circuit in Figure 1a will have a soft or hard switching characteristic depends on the position of the breakpoints on the pinched hysteresis characteristic, which are determined by the moment when the charge on the proposed emulator circuits reaches the maximum value. These points are determined by the moment when the input current signal reaches the transition point-the so-called zero-crossing (assuming the input current is defined as I m cosωt), and provided that the value of the voltage is as small as possible, i.e., converges to zero [36,37]. In this way, the transient characteristic of the realized memcapacitance becomes closer to the axis q, and the circuit realizes the hard switching characteristic.…”