Floating gate EEPROM as EOS indicators during wafer-level GMR processing

Process induced poling and plasma induced damage of thin film PZT

“…During the ion milling process, positive charging is mainly caused by the high energy ion beam and background gas ions; negative charging is mainly caused by the electron shower generated by the neutralizer and plasma electrons [26]. The polarity of net charging may relate with the ion milling parameters, which can be either positive or negative [25,26].…”

Use of EEPROM-based sensors in investigating physical mechanisms responsible for charging damage

“…Due to their ability to measure surface-substrate potentials, charge-fluxes, and UV intensity, the CHARM-2 EEPROM-based charging monitors have been used by IC manufacturers, disc drive manufacturers [25], and process equipment manufacturers to quantify and study charging phenomena inside process tools. The examples presented in this paper attempted to illustrate some of their applications, and what can be learned about charging phenomena by using them.…”

Characterization and reliability studies towards piezoelectrically actuated RF-MEMS switches

“…So it can be expected that the positive charge on the wafer is even more than the sum of all positive charge implanted. The polarity of net charge may relate with the ion milling parameters, which can be either positive or negative [165,166].…”