Flip-chip mounted, Ku band power amplifier compliant with space applications

Vendier, O.; Fraysse, Jean-Philippe; Schaffauser, C.; Paillard, M.; Drevon, C.; Cazaux, J.-L.; Floriot, D.; Caillas-Devignes, N.; Blanck, H.; Auxemery, P.; Ceuninck, W. De; Petersen, Ronald C.; Haese, N.; Rolland, P.A.

doi:10.1109/mwsym.2002.1012114

Cited by 7 publications

(2 citation statements)

References 4 publications

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“…A flip-chip interconnection structure, in which a semiconductor chip and an assembly substrate are connected using bumps, is expected to become increasingly popular for high-frequency devices such as GaAs high electron mobility transistor (HEMT) [1][2][3][4][5], because the structure has merits such as excellent highfrequency characteristics, small size and low cost. However, the structure with flip-chip interconnections is very different from the conventional structure using bonding wires.…”

Section: Introductionmentioning

confidence: 99%

Characteristics of GaAs HEMTs with Flip-Chip Interconnections

Sasaki

Arai

Iseki

2002

32nd European Microwave Conference, 2002

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A GaAs HEMT with flip-chip interconnections has been developed. There are various ground current passes for the HEMT on surface of the GaAs chip in this assembly structure, each pass depending on the transmission line type for the chip. We evaluated the high-frequency characteristics of the HEMT TEGs with flip-chip interconnection for three types of the transmission lines: with a microstrip line (MSL), with a coplanar waveguide (CPW), and with an inverted microstrip line (IMSL). All three types of TEGs had similar values of a maximum available power gain (MAG) at 30 GHz. However, the IMSL-type TEG, which had superior characteristics in high-frequency ranges of more than 30 GHz, was chosen as the most suitable type. The IMSL-type TEG had an MAG of 10.02 dB and a Rollett stability factor K of 1.20 at 30 GHz.

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Section: Introductionmentioning

confidence: 99%

Characteristics of GaAs HEMTs with Flip-Chip Interconnections

Sasaki

Arai

Iseki

2002

32nd European Microwave Conference, 2002

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“…In this paper, an FEM software, ANSYS [8], was used to calculate the 2-D distribution of stain and stress of the ACA flip-chip assembly during a cooling process. Because of the symmetry, only 112 of the flip chip structure was analyzed.…”

Section: Thermal-mechanical Characterization O F Aca Flip-chip Assemblymentioning

confidence: 99%

High frequency flip chip interconnection on liquid crystal polymer substrate using anisotropic conductive adhesive

Zou¹,

Grönqvist²,

Lai³

et al.

4th IEEE International Conference on Polymers and Adhesives in Microelectronics and Photonics, 2004. POLYTRONIC 2004.

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An ACA flip-chip assembly of an MMIC on liquid crystal polymer (LCP) substrate is presented in this paper. The high frequency performance has been simulated using a lumped element model. The finite element method (FEM) computation of the thermal mechanical characterization of the ACA flip chip assembly in a cooling process was performed. The simulation results show that LCP has good high frequency performance. The LCP substrate has better thermal mechanical performance than a Teflon substrate.

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Characterization of transfer molding effects on RF performance of power amplifier module

Kapur

Heames

2004 Proceedings. 54th Electronic Components and Technology Conference (IEEE Cat. No.04CH37546)

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Flip-chip mounted, Ku band power amplifier compliant with space applications

Cited by 7 publications

References 4 publications

Characteristics of GaAs HEMTs with Flip-Chip Interconnections

Characteristics of GaAs HEMTs with Flip-Chip Interconnections

High frequency flip chip interconnection on liquid crystal polymer substrate using anisotropic conductive adhesive

Characterization of transfer molding effects on RF performance of power amplifier module

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