Flexible Visible‐Light Photodetectors with Broad Photoresponse Based on ZrS₃ Nanobelt Films

Abstract

Two new flexible visible-light photodetectors based on ZrS3 nanobelts films are fabricated on a polypropylene (PP) film and printing paper, respectively, by an adhesive-tape transfer method, and their light-induced electric properties are investigated in detail. The devices demonstrate a remarkable response to 405 to 780 nm light, a photocurrent that depends on the optical power and light wavelength, and an excellent photoswitching effect and stability. This implies that ZrS3 nanobelts are prospective candidates for high-performance nanoscale optoelectronic devices that may be practically applied in photodetection of visible to near infrared light. The facile fabrication method is extendable to flexible nanodevices with different nanostructures.

Enhanced ultraviolet-visible light responses of phototransistors based on single and a few ZrS3 nanobelts

“…26, which is attributed to the different orientation of the materials in the process of measurement, but both can be indexed as the same ZrS 3 phase. 26, which is attributed to the different orientation of the materials in the process of measurement, but both can be indexed as the same ZrS 3 phase.…”

“…28 TMTs are another type of layered compounds which are composed of MX 3 (M: IV−VIB metals; X: S, Se and Te). The light on/off current ratio was about 3.5 at a bias of 5 V under illumination of 405-nm light of 12.1 mW/cm 2 with a photoswitch period of 50 s. 26 ZrS 3 is a broad photoresponse material from ultraviolet (UV) to near-infrared (NIR), and low-cost, however so far, many photosensitive materials are still limited to separate photosensitive region, so it is an important actual meaning to make a new broad and high-photosensitive ZrS 3 -based photodector. The chains with strong ionic covalent (or metallic) bond are separated by a relatively large distance and interchain bond.…”

“…On the basis of the design idea, Li et al once constructed an individual ZrS 2 nanobelt phototransistor and found its excellent visible-light response. 25 Subsequently, we found the broad visible-light responses of transition metal trichalcogenides (TMTs) such as ZrS 3 , 26 HfS 3 , 27 ZrSe 3 and HfSe 3 . 24 The ZrS 2 nanobelts were synthesized by a vacuum proylysis of ZrS 3 nanobelts.…”

Electronics and optoelectronics of quasi-1D layered transition metal trichalcogenides

“…The devices present ON/OFF current ratios of about 1.5 with dark current of 109 pA and response times around 390/800 ms (rise time/decay time). 76 The responsivity measured for this material is 500 mA W -1 with a cutoff wavelength for strong photoresponsivity around 850 nm. 75,76 HfS3 is another p-type semiconductor from the TMTCs family with the same crystal structure as ZrS3 but where Hf atoms replace Zr.…”

Newborn 2D materials for flexible energy conversion and storage

“…Upon the excitation of light, the bound electron-hole pairs are generated by the incident photons whose energy is greater than the band gap of the semiconductor and the yielded photocurrent is correlated with light intensity [15]. Compared to silicon with an indirect band gap or graphene without a band gap [59], NB2DMs with tunable direct band gap and high absorption efficiency have emerged as potential candidates for next-generation flexible photodetectors [22,[71][72][73][74][75][76][77][78][79][80][81][82][83][84].…”