Flexible Sol-Gel—Processed Y2O3 RRAM Devices Obtained via UV/Ozone-Assisted Photochemical Annealing Process

Abstract

Flexible indium tin oxide (ITO)/Y2O3/Ag resistive random access memory (RRAM) devices were successfully fabricated using a thermal-energy-free ultraviolet (UV)/ozone-assisted photochemical annealing process. Using the UV/ozone-assisted photochemical process, the organic residue can be eliminated, and thinner and smother Y2O3 films than those formed using other methods can be fabricated. The flexible UV/ozone-assisted photochemical annealing process-based ITO/Y2O3/Ag RRAM devices exhibited the properties of conventional bipolar RRAM without any forming process. Furthermore, the pure and amorphous-phase Y2O3 films formed via this process showed a decreased leakage current and an increased high-resistance status (HRS) compared with the films formed using other methods. Therefore, RRAM devices can be realized on plastic substrates using a thermal-energy-free UV/ozone-assisted photochemical annealing process. The fabricated devices exhibited a resistive window (ratio of HRS/low-resistance status (LRS)) of >104, with the HRS and LRS values remaining almost the same (i.e., limited deterioration occurred) for 104 s and up to 102 programming/erasing operation cycles.

New n-p Junction Floating Gate to Enhance the Operation Performance of a Semiconductor Memory Device

“…The 3D NAND FLASH structure was proposed as a solution when 2D NAND FLASH reached the scaling limit of a 15 nm process node [ 21 ]. Furthermore, the ReRAM [ 8 , 22 ], PCRAM [ 23 , 24 ], FeRAM [ 25 , 26 ] and MRAM [ 27 , 28 ] devices have also attracted much attention in the past two decades as promising candidates for the next generation of nonvolatile memory cells with improved performance. However, new semiconductor devices with markedly shrunken gate structures and reduced charge leakage that do not sacrifice their performance or suffer from environmental contamination are still elusive.…”

Thickness dependence of resistive switching characteristics of the sol–gel processed Y2O3 RRAM devices

“…In addition, its fast operation, low-power consumption, and extreme scalability are well matched with the aforementioned requirements for next-generation memory devices, overcoming the limitations of conventional flash memories. Many oxides have been used as active channel layers, such as SiO x , ZrO 2 , TiO x , Hf x O, and Y 2 O 3 [7][8][9][10][11][12][13][14][15][16][17]. Among these, Y 2 O 3 has several advantages.…”

Sol–Gel-Processed Y2O3 Multilevel Resistive Random-Access Memory Cells for Neural Networks

“…Numerous metal oxide materials, including ZrO 2 , HfO 2 , TiO 2 , and Y 2 O 3 , have been utilized as active channel layers in RRAM devices [8][9][10][11][12][13][14][15][16][17][18]. Among them, Y 2 O 3 stands out due to its high dielectric constant and large optical band gap, making it a promising highk candidate for replacing SiO 2 in complementary metal-oxide-semiconductor processes in the industry.…”