Flexible Self-Aligned Amorphous InGaZnO Thin-Film Transistors With Submicrometer Channel Length and a Transit Frequency of 135 MHz

Geometry-Based Tunability Enhancement of Flexible Thin-Film Varactors

“…For the bending experiments, the devices are attached to a cylindrical metal rod with a radius of 6 mm (see inset). The change in the C-V characteristics can be considered negligible, which is in agreement to our previous work [22]. By I-V measurements, we identified the leakage current being always below 20 pA.…”

Contact resistance and overlapping capacitance in flexible sub-micron long oxide thin-film transistors for above 100 MHz operation

“…In flexible devices, these overlaps are caused by the fabrication on mechanically and thermally instable flexible substrates. 18 This leads to the fact that f T values for 1 lm-long IGZO TFTs are <100 MHz ( Figure S2(d) 19 ). 20,21 In fact, if the channel length is reduced below 1 lm the channel resistance becomes smaller than the contact resistance, thus causing the effective mobility l eff ,t o drop.…”

“…The fabrication process is described elsewhere. 18,21 The TFTs exhibit channel length between 10 lm and 0.5 lm, and gate to source/drain overlaps L OV of 15 lm, 5 lm, and 1.5 lm. These dimensions are limited by the deformation of the flexible substrate during the fabrication process.…”

“…7,12,21,24 Larger strain causes cracks and destroys the TFTs permanently. 18 Due to the ratio between the lateral structure sizes and the layer thicknesses of the TFTs (Fig. 1), as well as because of the obtained TFT characteristics, short channel effects are assumed to be negligible.…”

Radio frequency electronics on plastic

“…However, recently, the speed of TOLAE was massively increased. Based on IGZO material yielding a mobility of 15 cm 2 /Vs, a transit frequency (f t ) of approximately 140 MHz was demonstrated for TFTs [2].…”