Flexible Polymer Device Based on Parylene-C with Memory and Temperature Sensing Functionalities

Abstract

Polychloro-para-xylylene (parylene-C) is a flexible and transparent polymer material which has excellent chemical stability and high biocompatibility. Here we demonstrate a polymer device based on single-component parylene-C with memory and temperature sensing functionalities. The device shows stable bipolar resistive switching behavior, remarkable storage window (>10 4 ), and low operation voltages, exhibiting great potential for flexible resistive random-access memory (RRAM) applications. The I-V curves and conductive atomic force microscopy (CAFM) results verify the metallic filamentary-type switching mechanism based on the formation and dissolution of a metal bridge related to the redox reaction of the active metal electrode. In addition, due to the metallic properties of the low-resistance state (LRS) in the polymer device, the resistance in the LRS exhibits a nearly linear relationship at the temperature regime between 25 • C and 100 • C. With a temperature coefficient of resistance (TCR) of 2.136 × 10 −3 / • C, the device is also promising for the flexible temperature sensor applications.

Spike‐Timing‐Dependent and Spike‐Shape‐Independent Plasticities with Dopamine‐Like Modulation in Nanocomposite Memristive Synapses

“…Such a mechanism is realized in different oxides (TiO 2 , SiO 2 , HfO 2 , etc. ), [11][12][13][14][15] with filaments composed of oxygen vacancies, or in dielectrics (SiO 2 , organic materials), [16][17][18] with metal bridges formed by cations. In this case, the variability of parameters, both device to device and cycle to cycle, could be significant because of the random character of the filament (bridge) formation process.…”

Intrinsically Stretchable Resistive Switching Memory Enabled by Combining a Liquid Metal–Based Soft Electrode and a Metal–Organic Framework Insulator

“…[10][11][12][13][14] For instance, by depositing hafnium oxide directly on plastic substrate, Shang et al successfully made flexible RRAM device that can be bent to the strain level of 3.18%. [11,17] Nevertheless, the limited adaptability of inorganic materials to large strains obviously hinders their application for stretchable electronics, while the soft organic materials bear poor resistance to the changing environments of atmosphere moisture and oxygen. [11,17] Nevertheless, the limited adaptability of inorganic materials to large strains obviously hinders their application for stretchable electronics, while the soft organic materials bear poor resistance to the changing environments of atmosphere moisture and oxygen.…”

Glucose-based resistive random access memory for transient electronics

“…The double logarithmic plot and linear fitting of the I-V switching curve were carried out as shown in Figure 5 to further confirm the conduction mechanism of glucose-based RRAM. In the LRS region, Ohmic conduction (I ∝ V) with a ∼ 1 slope demonstrating conductive filament formation in the device can be confirmed by the result of linear dependence according to the voltage variation [14][15][16][17]. On the other hand, the HRS region exhibited three different conduction behaviors with different slopes, demonstrating space-charge-limited conduction: the Ohmic conduction region (I ∝V) with a ∼ 1 slope at a low voltage, the Child's law region (I ∝V 2 ) with a ∼ 2 slope at a high voltage, and the rapid-currentincrease region at the SET voltage [14][15][16].…”