Flexible p-type PEDOT:PSS/a-Si:H hybrid thin film solar cells with boron-doped interlayer

Lee, Yoo Jeong; Yeon, Changbong; Lim, Jung Wook; Yun, Sun Jin

doi:10.1016/j.solener.2018.02.026

Cited by 18 publications

(14 citation statements)

References 28 publications

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“…In hybrid crystalline silicon (c-Si) solar cells, PEDOT:PSS has been demonstrated to be a very efficient electron blocker, acting as “ideal” barrier [9,10,11] or passivation material [12] in heterojunction intrinsic thin film (HIT) solar cells, acting as a substitute of p-type material. PEDOT:PSS thin films have also shown potential to be used with amorphous silicon as a p-type window layer in PV devices [13,14,15] due to their large bandgap (~1.6 eV) and high work function (~5 eV). Moreover, the p-type polymer layer has the potential to simplify the fabrication of the frontal interfaces.…”

Section: Introductionmentioning

confidence: 99%

“…However, it is widely believed that the performance parameters of superstrate-type devices are limited by the degradation of PEDOT:PSS due to exposure to high temperature (>200 °C) and ion bombardment during the plasma deposition of subsequent layers. Thus, Lee et al, in 2018 [13], fabricated a substrate-type solar structure in order to avoid exposure of the PEDOT:PSS layer to plasma-enhanced chemical vapor deposition (PECVD). As a result, the performance characteristics of the substrate-type configuration were considerably higher than those in superstrate-type configuration.…”

Section: Introductionmentioning

confidence: 99%

“…As a result, the performance characteristics of the substrate-type configuration were considerably higher than those in superstrate-type configuration. Finally, improving the wettability of PEDOT:PSS on a-Si:H film and adding a p-type a-Si:H buffer layer, Lee et al [13] increased the PCE of these structures on glass substrate from 3.10% to 7.40%.…”

Section: Introductionmentioning

confidence: 99%

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Nanostructural Modification of PEDOT:PSS for High Charge Carrier Collection in Hybrid Frontal Interface of Solar Cells

et al. 2019

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In this work, we propose poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) material to form a hybrid heterojunction with amorphous silicon-based materials for high charge carrier collection at the frontal interface of solar cells. The nanostructural characteristics of PEDOT:PSS layers were modified using post-treatment techniques via isopropyl alcohol (IPA). Atomic force microscopy (AFM), Fourier-transform infrared (FTIR), and Raman spectroscopy demonstrated conformational changes and nanostructural reorganization in the surface of the polymer in order to tailor hybrid interface to be used in the heterojunctions of inorganic solar cells. To prove this concept, hybrid polymer/amorphous silicon solar cells were fabricated. The hybrid PEDOT:PSS/buffer/a-Si:H heterojunction demonstrated high transmittance, reduction of electron diffusion, and enhancement of the internal electric field. Although the structure was a planar superstrate-type configuration and the PEDOT:PSS layer was exposed to glow discharge, the hybrid solar cell reached high efficiency compared to that in similar hybrid solar cells with substrate-type configuration and that in textured well-optimized amorphous silicon solar cells fabricated at low temperature. Thus, we demonstrate that PEDOT:PSS is fully tailored and compatible material with plasma processes and can be a substitute for inorganic p-type layers in inorganic solar cells and related devices with improvement of performance and simplification of fabrication process.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Nanostructural Modification of PEDOT:PSS for High Charge Carrier Collection in Hybrid Frontal Interface of Solar Cells

et al. 2019

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“…On the other hand, a flexible n–i–p type structure based on a-Si:H/PEDOT:PSS interface has been reported in Ref. [21] with a maximum efficiency of 6.52%. It is important to note that the structure reported in Ref.…”

Section: Resultsmentioning

confidence: 99%

“…It is important to note that the structure reported in Ref. [21] was deposited on a non-transparent Ag-coated polyimide substrate and fabricated as substrate configuration. The advantage of use-transparent substrates, such as PEN and a pin-type structure, as reported in this work, is that the substrate can be simultaneously used as a supporting structure as well as a window for the capture of light (superstrate configuration).…”

Section: Resultsmentioning

confidence: 99%

AZO/PEDOT:PSS Polymer Frontal Interface Deposited on Flexible Substrates for a-Si:H Photovoltaic Applications

et al. 2018

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Thin-film hybrid organic-inorganic photovoltaic structures based on hydrogenated silicon (Si:H), poly(3,4ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS) polymer Al-doped ZnO (AZO) films deposited on different types of flexible substrates have been fabricated and investigated. The compatibility of the polymer and inorganic materials regimes and deposition techniques used for device fabrication has been demonstrated on flexible substrates. Morphological characteristics of transparent Al-doped ZnO (AZO) films deposited on substrates have been measured by atomic force microscopy. Electronic characteristics of the fabricated photovoltaic structures have been measured and analyzed for different thicknesses of the transparent electrodes and different substrate types. Photovoltaic hybrid structure on polyethylene naphthalate (PEN) substrate showed the best characteristics: short circuit current density Jsc = 9.79 mA/cm2, open circuit voltage Uoc = 565 mV, and PCE η = 1.3%. To analyze the mechanisms governing the device performance, short circuit current density spectral dependence of the devices fabricated on different types of flexible substrates has been measured. As demonstrated by our analysis, the structures on PEN substrates, besides better substrate transmittance, also show better junction properties.

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Schottky diode based resistive switching device based on ZnO/PEDOT:PSS heterojunction to reduce sneak current problem

Khan

Hassan

Raza

et al. 2019

J Mater Sci: Mater Electron

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Flexible p-type PEDOT:PSS/a-Si:H hybrid thin film solar cells with boron-doped interlayer

Cited by 18 publications

References 28 publications

Nanostructural Modification of PEDOT:PSS for High Charge Carrier Collection in Hybrid Frontal Interface of Solar Cells

Nanostructural Modification of PEDOT:PSS for High Charge Carrier Collection in Hybrid Frontal Interface of Solar Cells

AZO/PEDOT:PSS Polymer Frontal Interface Deposited on Flexible Substrates for a-Si:H Photovoltaic Applications

Schottky diode based resistive switching device based on ZnO/PEDOT:PSS heterojunction to reduce sneak current problem

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