Schottky diode based resistive switching device based on ZnO/PEDOT:PSS heterojunction to reduce sneak current problem

Khan, Muhammad Umair; Hassan, Gul; Raza, Muhammad Asim; Bae, Jinho; Kobayashi, Nobuhiko P.

doi:10.1007/s10854-019-00753-y

Cited by 27 publications

(18 citation statements)

References 47 publications

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“…80-nm-thick RS film ( Supplementary Figure 1 ). As illustrated in Figure 1B , the hole injection barrier (0.5 eV) between ITO and PEDOT:PSS is much smaller than the electron injection barrier (1.2 eV) between PEDOT:PSS and Al, indicating that hole carriers dominate the injection from ITO to the highest occupied molecular orbital (HOMO) level of PEDOT:PSS ( Khan et al, 2019 ; Wang et al, 2021 ). A 9-nm-thin pentacene film was chosen as the p -type interlayer between PEDOT:PSS and Al.…”

Section: Resultsmentioning

confidence: 99%

Low-power flexible organic memristor based on PEDOT:PSS/pentacene heterojunction for artificial synapse

et al. 2022

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Organic synaptic memristors are of considerable interest owing to their attractive characteristics and potential applications to flexible neuromorphic electronics. In this work, an organic type-II heterojunction consisting of poly(3,4-ethylenedioxythiophene): polystyrene sulfonate (PEDOT:PSS) and pentacene was adopted for low-voltage and flexible memristors. The conjugated polymer PEDOT:PSS serves as the flexible resistive switching (RS) layer, while the thin pentacene layer plays the role of barrier adjustment. This heterojunction enabled the memristor device to be triggered with low-energy RS operations (V < ± 1.0 V and I < 9.0 μA), and simultaneously providing high mechanical bending stability (bending radius of ≈2.5 mm, bending times = 1,000). Various synaptic properties have been successfully mimicked. Moreover, the memristors presented good potentiation/depression stability with a low cycle-to-cycle variation (CCV) of less than 8%. The artificial neural network consisting of this flexible memristor exhibited a high accuracy of 89.0% for the learning with MNIST data sets, even after 1,000 tests of 2.5% stress-strain. This study paves the way for developing low-power and flexible synaptic devices utilizing organic heterojunctions.

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Section: Resultsmentioning

confidence: 99%

Low-power flexible organic memristor based on PEDOT:PSS/pentacene heterojunction for artificial synapse

et al. 2022

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“…The conduction mechanism of bulk heterojunction and oxide layer resistive memory device Ag/ZnO/P3HT-PCBM/ITO was analyzed by ln of I-V curve and with the aid of the minimal space charge limited current (SCLC) mechanism [ 36 ], as shown in Figure 3 d. Segment C demonstrates the LRS state, i.e., the SET process and follows the current’s linear action against voltage I α V; m ~ 1, showing the metallic existence of the conduction filament. Whereas in HRS, segment A presents a low positive region that confirms the Ohmic conduction I α V with slope value 1; due to the thermally produced free charge carriers and low current flow amounts, this conduction occurs.…”

Section: Resultsmentioning

confidence: 99%

Stable and Multilevel Data Storage Resistive Switching of Organic Bulk Heterojunction

et al. 2021

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Organic nonvolatile memory devices have a vital role for the next generation of electrical memory units, due to their large scalability and low-cost fabrication techniques. Here, we show bipolar resistive switching based on an Ag/ZnO/P3HT-PCBM/ITO device in which P3HT-PCBM acts as an organic heterojunction with inorganic ZnO protective layer. The prepared memory device has consistent DC endurance (500 cycles), retention properties (104 s), high ON/OFF ratio (105), and environmental stability. The observation of bipolar resistive switching is attributed to creation and rupture of the Ag filament. In addition, our conductive bridge random access memory (CBRAM) device has adequate regulation of the current compliance leads to multilevel resistive switching of a high data density storage.

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“…Polyimide P2 was chosen as the representative example for the comparative description of the devices having different anodes. To construct the band diagrams, the HOMO and LUMO energies and the Fermi level of PEDOT:PSS were assumed to be −5.2, −3.5, and −5 eV, respectively . Also, based on literature data, the Fermi levels of ITO and Al were considered to be 4.7 and 4.1 eV, respectively, , while for eGaIn a value of 4.2 eV was chosen arbitrarily since gallium represents 75% from the alloy mixture.…”

Section: Resultsmentioning

confidence: 99%

Assessing the Electrical Characteristics of p–n Heterojunction Prototype Diodes Realized with n-Type Polyimide Materials

Constantin¹,

Lisă

Damaceanu³

2021

Macromolecules

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Three new aromatic polyimides with donor–acceptor topology consisting of electron-donating ortho-catenated triphenylamine (TPA) modified with two trifluoromethyl (CF3) groups and electron-accepting naphthyl(di)imide- or perylenediimide-based moieties were synthesized and thoroughly investigated. Their main physicochemical properties were assessed according to the structural variation of the dianhydride segment. The polymers exhibited advantageous solubility in polar solvents, which allowed their processing into homogeneous thin films under friendly conditions, as well as good thermal stability. The photo-optical activity investigated in detail by UV–vis and fluorescence spectroscopy was finely modulated by the electron-accepting strength of the dianhydride segment, with light emission originating from both monomeric and intramolecular charge transfer transitions, which is otherwise dependent on the polarity of the surrounding solvent molecules. Due to the high electron-accepting characteristics promoted by both CF3 and naphthyl(di)imide or perylenediimide, these polymers behaved as n-type materials. The highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) energies evaluated according to the electrochemical activity suggested the polymers suitability for use in p–n heterojunctions. Thus, to prove the electron transporting capability, prototype diodes have been realized with these polyimides in an indium tin oxide (ITO)(Al)/poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS)/polyimide/eGaIn configuration. Their current–voltage characteristics revealed a rectification ratio up to 63, moderate to high shunt resistance, moderate to low series resistance, and moderate current leakages. The charge transport evaluation disclosed the tunneling phenomenon as the main mechanism that drives the realized prototype diodes, with an ideality factor down to 5.48. The nice combined features encountered for these polyimides make them appealing candidates as n-type materials for advanced optoelectronic applications.

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Schottky diode based resistive switching device based on ZnO/PEDOT:PSS heterojunction to reduce sneak current problem

Cited by 27 publications

References 47 publications

Low-power flexible organic memristor based on PEDOT:PSS/pentacene heterojunction for artificial synapse

Low-power flexible organic memristor based on PEDOT:PSS/pentacene heterojunction for artificial synapse

Stable and Multilevel Data Storage Resistive Switching of Organic Bulk Heterojunction

Assessing the Electrical Characteristics of p–n Heterojunction Prototype Diodes Realized with n-Type Polyimide Materials

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