Flexible organic synaptic device based on poly (methyl methacrylate):CdSe/CdZnS quantum-dot nanocomposites

Koo, Bon Min; Sung, Sihyun; Wu, Chaoxing; Song, Ju-man; Kim, Tae Whan

doi:10.1038/s41598-019-46226-4

Cited by 22 publications

(14 citation statements)

References 30 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The two-terminal memristor was prepared on a PEN substrate with the device architecture of Al/(PMMA:CdSe/CdZnS)/ (PEDOT:PSS/ITO)/PEN. 419 Pinched hysteresis behaviors and electrical performances under bending conditions were achieved, indicative of good bending stability of the flexible synaptic device. However, a simple bending stability of the neuromorphic device will not be enough to meet the requirements of developing wearable intelligent systems, and a sophisticated synaptic device with excellent flexibility and mechanical robustness are desirable.…”

Section: Qd-based Electronics For Synaptic Functionsmentioning

confidence: 90%

“…Kim et al developed a flexible synaptic memristor using a PMMA:CdSe/CdZnS QD composite as the switching layer. The two-terminal memristor was prepared on a PEN substrate with the device architecture of Al/(PMMA:CdSe/CdZnS)/(PEDOT:PSS/ITO)/PEN . Pinched hysteresis behaviors and electrical performances under bending conditions were achieved, indicative of good bending stability of the flexible synaptic device.…”

Section: Qd-based Electronics For Brain-inspired Computingmentioning

confidence: 99%

See 1 more Smart Citation

Semiconductor Quantum Dots for Memories and Neuromorphic Computing Systems

et al. 2020

View full text Add to dashboard Cite

The continued growth in the demand of data storage and processing has spurred the development of high-performance storage technologies and brain-inspired neuromorphic hardware. Semiconductor quantum dots (QDs) offer an appealing option for these applications since they combine excellent electronic/optical properties and structural stability and can address the requirements of low-cost, large-area, and solution-based manufactured technologies. Here, we focus on the development of nonvolatile memories and neuromorphic computing systems based on QD thin-film solids. We introduce recent advances of QDs and highlight their unique electrical and optical features for designing future electronic devices. We also discuss the advantageous traits of QDs for novel and optimized memory techniques in both conventional flash memories and emerging memristors. Then, we review recent advances in QD-based neuromorphic devices from artificial synapses to light-sensory synaptic platforms. Finally, we highlight major challenges for commercial translation and consider future directions for the postsilicon era.

show abstract

Section: Qd-based Electronics For Synaptic Functionsmentioning

confidence: 90%

Section: Qd-based Electronics For Brain-inspired Computingmentioning

confidence: 99%

Semiconductor Quantum Dots for Memories and Neuromorphic Computing Systems

et al. 2020

View full text Add to dashboard Cite

show abstract

“…Department of Physics, Indian Institute of Space-Science and Technology (IIST), Valiyamala, Thiruvananthapuram 695547, Kerala, India. * email: kbjinesh@iist.ac.in Interestingly, a large class of nanomaterials has been investigated to understand their neuromorphic responses, because nanostructures have a large number of surface defects that can be electrically modulated [4][5][6][7] .…”

Section: Openmentioning

confidence: 99%

“…For a memristor to perform as an artificial synapse, it should have the capability to vary its charging capacity when modulated by a voltage pulse. Interestingly, a large class of nanomaterials has been investigated to understand their neuromorphic responses, because nanostructures have a large number of surface defects that can be electrically modulated 4 – 7 .…”

Section: Introductionmentioning

confidence: 99%

Programmable electronic synapse and nonvolatile resistive switches using MoS2 quantum dots

Thomas

Resmi

Ganguly

et al. 2020

Sci Rep

View full text Add to dashboard Cite

Brain-inspired computation that mimics the coordinated functioning of neural networks through multitudes of synaptic connections is deemed to be the future of computation to overcome the classical von Neumann bottleneck. The future artificial intelligence circuits require scalable electronic synapse (e-synapses) with very high bit densities and operational speeds. in this respect, nanostructures of two-dimensional materials serve the purpose and offer the scalability of the devices in lateral and vertical dimensions. in this work, we report the nonvolatile bipolar resistive switching and neuromorphic behavior of molybdenum disulfide (MoS 2) quantum dots (QD) synthesized using liquid-phase exfoliation method. The ReRAM devices exhibit good resistive switching with an On-Off ratio of 10 4 , with excellent endurance and data retention at a smaller read voltage as compared to the existing MoS 2 based memory devices. Besides, we have demonstrated the e-synapse based on MoS 2 QD. Similar to our biological synapse, paired pulse facilitation / Depression of short-term memory has been observed in these MoS 2 QD based e-synapse devices. this work suggests that MoS 2 QD has potential applications in ultra-high-density storage as well as artificial intelligence circuitry in a costeffective way.

show abstract

“…Charge trapping in the CdSe quantum dot along with a Coulomb blockade due to the presence of various types of metal oxide layers gives rise to high speed, consistent switching but with a smaller on–off ratio. , This has shown negative differential resistance as well. In a quantum dot, the metal–metal oxide and the quantum dot device configuration increased the on–off ratio by 1 order and the devices worked fast. , A combination of conducting small organic molecules and polymer with CdSe or a core–shell quantum dot formed a heterojunction that led to switching in the device. − These composites on a flexible surface formed a synaptic device architecture that can work as a neural network, and this is mainly due to the charge trapping in the quantum dots . Here, in this work, we have used a composite of poly(4-vinylpyridine) (PVP) along with colloidal CdSe quantum dots synthesized using the hot-injection method to fabricate the memory-switching device.…”

Section: Introductionmentioning

confidence: 99%

Hot Injection-Based Synthesized Colloidal CdSe Quantum Dots Embedded in Poly(4-vinylpyridine) (PVP) Matrix Form a Nanoscale Heterostructure for a High On–Off Ratio Memory-Switching Device

Pradhan

Bera

Betal

et al. 2021

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

Chalcogenide-based quantum dots are useful for the application of memory-switching devices because of the control in the trap states in the materials. The control in the trap states can be achieved using a hot-injection colloidal synthesis method that produces temperature-dependent size-variable quantum dots. In addition to this, formation of a nanoscale heterostructure with an insulating material adds to the charge-trapped switching mechanism. Here, we have shown that the colloidal monodispersed CdSe quantum dots and poly(4-vinylpyridine) (PVP) formed a nanoscale heterostructure between themselves when taken in a suitable ratio to fabricate a device. This heterostructure helps realize memory-switching in the device with a maximum on−off current ratio of 10 5 . The switching in the device is mainly due to the trap states in the CdSe quantum dots. The conduction in the off state is due to thermal charge injection and space charge injection conduction and in the on state, due to the Ohmic conduction mechanism.

show abstract

Flexible organic synaptic device based on poly (methyl methacrylate):CdSe/CdZnS quantum-dot nanocomposites

Cited by 22 publications

References 30 publications

Semiconductor Quantum Dots for Memories and Neuromorphic Computing Systems

Semiconductor Quantum Dots for Memories and Neuromorphic Computing Systems

Programmable electronic synapse and nonvolatile resistive switches using MoS2 quantum dots

Hot Injection-Based Synthesized Colloidal CdSe Quantum Dots Embedded in Poly(4-vinylpyridine) (PVP) Matrix Form a Nanoscale Heterostructure for a High On–Off Ratio Memory-Switching Device

Contact Info

Product

Resources

About