Flexible Organic Complementary Circuits

Klauk, Hagen; Halik, Marcus; Zschieschang, Ute; Eder, F.; Rohde, Dirk; Schmid, Günter; Dehm, C.

doi:10.1109/ted.2005.844739

Cited by 164 publications

(100 citation statements)

References 30 publications

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“…It is therefore better to describe the CNT inverters as "complementary-like" instead of "complementary". 13,14 A more detailed discussion of the ambipolar inverter operation and power dissipation is included in Supporting Information (Figure S3).…”

Section: ϫ10mentioning

confidence: 99%

Printed, Sub-3V Digital Circuits on Plastic from Aqueous Carbon Nanotube Inks

et al. 2010

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Expanding applications for microelectronics in large-area sensor arrays, disposable sensor tapes, timeϪtemperature smart labels, radio frequency identification tags, and roll-up displays 1Ϫ4 motivate efforts to integrate electronics onto flexible plastic, paper, or metal substrates. A principal strategy for achieving flexible electronics is to employ graphic arts methods such as flexographic or ink-jet printing to pattern metallic, semiconducting, and insulating inks onto foils and paper. 5Ϫ10 Liquid phase printing offers the potential for high-throughput roll-toroll or sheet-to-sheet processing of electronics on large-area substrates, facilitating applications where large areas are necessary (e.g., displays) and also potentially translating into low production cost. Yet the challenge for printed electronics is to achieve high-performance circuits. The inherently low carrier mobilities of many printable organic or nanoparticle-based semiconductors lead to reduced transistor switching frequencies and high circuit supply voltages. Alternative strategies in which silicon chips are bonded to flexible substrates (by transfer printing or pick-andplace methods) are also attractive because they benefit from the superior electronic properties of silicon and the very advanced state of silicon microelectronics technology.11 In a competitive environment, the success of liquid phase printed electronics depends on substantial performance improvements, in particular, the development of faster, lower power printed circuits. Figure 1a displays a summary of reported signal delay times versus supply voltages for ring oscillator circuits based on organic semiconductors and carbon nanotube (CNT) arrays. It is evident that for nonprinted organic ring oscillators (open blue symbols) signal delays of 1Ϫ10 s have been achieved but only for supply voltages of 10Ϫ100 V, 12Ϫ24 while for supply voltages in the range of 4Ϫ10 V, the delay is above 10 s for the fastest circuits, with most displaying Ͼ1 ms switching times.25Ϫ28 Reports of printed ring oscillators are less common (solid green symbols in Figure 1a), and these circuits have generally required tens of volts to achieve switching times on the order of 1 ms.29Ϫ32 Such large voltages are not practical for many potential applications of flexible electronics where power will be supplied by thin-film batteries or radio frequency fields. Very recently, unipolar, p-type electrolyte-gated ring oscillator circuits have been demonstrated that indeed operate at very low

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Section: ϫ10mentioning

confidence: 99%

Printed, Sub-3V Digital Circuits on Plastic from Aqueous Carbon Nanotube Inks

et al. 2010

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“…Organic CMOS and their logic circuits based on p-and n-type organic semiconductors have already been reported [4], [5]. The field-effect mobility in saturation (µ sat ) values for p-type OFETs has exceeded 1 cm 2 /Vs in the case of vacuum-deposited small p-type organic molecules [3], [6].…”

Section: Introductionmentioning

confidence: 99%

Solution-Processed n-Type Organic Field-Effect Transistors With High on /off Current Ratios Based on Fullerene Derivatives

Tiwari

Namdas

Rao

et al. 2007

IEEE Electron Device Lett.

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“…The low operation voltage of -2.4 V is due to the low V t and small sub-threshold swing. Such small sub-threshold swing is better than other reported values for flexible OTFTs , Kang et al, 2005Klauk et al, 2005;Mizukami et al, 2006;Na et al, 2007), which is due to the using high- HfLaO dielectric with a high capacitance density of 450 nF/cm 2 and a small EOT of 7.7 nm. The smaller mobility and I on /I off than similar OTFT fabricated on SiO 2 /Si were due to the rougher HfLaO surface of 4.2 nm measured by Atomic Force Microscopy (AFM), which was originated from the poor 9.0 nm surface roughness of low cost polyimide substrate (Kapton HPP-ST, Dupont).…”

Section: Otft On Flexible Substratementioning

confidence: 61%

High Performance Organic Thin-Film Transistors and Nonvolatile Memory Devices Using High-Dielectric Layers

Chin¹

2010

Polymer Thin Films

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Flexible Organic Complementary Circuits

Cited by 164 publications

References 30 publications

Printed, Sub-3V Digital Circuits on Plastic from Aqueous Carbon Nanotube Inks

Printed, Sub-3V Digital Circuits on Plastic from Aqueous Carbon Nanotube Inks

Solution-Processed n-Type Organic Field-Effect Transistors With High on /off Current Ratios Based on Fullerene Derivatives

High Performance Organic Thin-Film Transistors and Nonvolatile Memory Devices Using High-Dielectric Layers

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