Flexible NiO nanocrystal-based resistive memory device fabricated by low-temperature solution-process

Yun, Hye Won; Woo, Ho Kun; Oh, Soong Ju; Hong, Sung Hoon

doi:10.1016/j.cap.2019.11.019

Cited by 18 publications

(5 citation statements)

References 31 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…At a lower operating voltage of a few hundred millivolts to a few volts, ReRAM has the advantages of lower power consumption and also excellent scalability, hence rendering it a promising research area for the advancement of the next-generation non-volatile memory 8 . Several studies had demonstrated the potential of flexible ReRAM using materials such as HfO x 9 , NiO 10 , TiO 2 11 , ZrN 12 , and ZnO 13 . However, one major problem in the implementation of ReRAM arrays for high density memory is the sneak path current issue, which degrades the array performance 14 .…”

Section: Introductionmentioning

confidence: 99%

Strain-induced degradation and recovery of flexible NbOx-based threshold switching device

Ang,

Dananjaya,

Ang

et al. 2023

Sci Rep

View full text Add to dashboard Cite

We investigate the functionality of NbOx-based selector devices on a flexible substrate. It was observed that the failure mechanism of cyclic tensile strain is from the disruption of atom arrangements, which essentially led to the crack formation of the film. When under cyclic compressive strain, buckling delamination of the film occurs as the compressed films have debonded from their neighboring layers. By implementing an annealing process after the strain-induced degradation, recovery of the device is observed with reduced threshold and hold voltages. The physical mechanism of the device is investigated through Poole–Frenkel mechanism fitting, which provides insights into the switching behavior after mechanical strain and annealing process. The result demonstrates the potential of the NbOx device in flexible electronics applications with a high endurance of up to 105 cycles of cyclic bending strain and the recovery of the device after degradation.

show abstract

Section: Introductionmentioning

confidence: 99%

Strain-induced degradation and recovery of flexible NbOx-based threshold switching device

Ang,

Dananjaya,

Ang

et al. 2023

Sci Rep

View full text Add to dashboard Cite

show abstract

“…Apart from silicon substrates, the memristive devices are also realized on polymer substrates for applications in the field of flexible electronics [11]. Oxides such as TiO 2 [12], NiO [13], ZnO [14], etc., among many others, are used as a physically flexible switching material in memristive devices. Further, the memristive devices are fabricated on glass substrates, which have low thermal conductivities, compared to silicon substrates [15].…”

Section: Introductionmentioning

confidence: 99%

Modulating the Filamentary-Based Resistive Switching Properties of HfO2 Memristive Devices by Adding Al2O3 Layers

et al. 2022

View full text Add to dashboard Cite

The resistive switching properties of HfO2 based 1T-1R memristive devices are electrically modified by adding ultra-thin layers of Al2O3 into the memristive device. Three different types of memristive stacks are fabricated in the 130 nm CMOS technology of IHP. The switching properties of the memristive devices are discussed with respect to forming voltages, low resistance state and high resistance state characteristics and their variabilities. The experimental I–V characteristics of set and reset operations are evaluated by using the quantum point contact model. The properties of the conduction filament in the on and off states of the memristive devices are discussed with respect to the model parameters obtained from the QPC fit.

show abstract

“…A flexible self-charging supercapacitor can be also a potential candidate providing a substrate bias to supply flexible electronics . Even though a couple of memory devices have been demonstrated based on a flexible substrate, − neuromorphic computing with them has been rarely studied despite its necessity, considering the efficiency of data processing in an individual mobile device. Mobile edge computing in individual electronics can be realized if a neuromorphic computing system can be implemented in a flexible substrate.…”

Section: Introductionmentioning

confidence: 99%

Effect of the Gate Dielectric Layer of Flexible InGaZnO Synaptic Thin-Film Transistors on Learning Behavior

Park

Jang

Hwang

et al. 2021

ACS Appl. Electron. Mater.

View full text Add to dashboard Cite

In this work, flexible InGaZnO (IGZO) synaptic thin-film transistors (TFTs) with different gate dielectric layers are fabricated and analyzed to investigate the effect of the gate insulator of flexible IGZO synaptic TFTs in terms of weight window and retention characteristics. The gradual weight modulation of these devices comes from the migration of hydrogens in the Al 2 O 3 layer deposited by low-temperature atomic layer deposition and can be controlled by gate bias. In addition, the learning behaviors with identical and incremental pulse schemes are verified for a linear weight modulation, and its effect in pattern recognition accuracy is studied considering device variation and retention properties in a 784 × 10 fully connected neural network with handwritten digit images.

show abstract

Flexible NiO nanocrystal-based resistive memory device fabricated by low-temperature solution-process

Cited by 18 publications

References 31 publications

Strain-induced degradation and recovery of flexible NbOx-based threshold switching device

Strain-induced degradation and recovery of flexible NbOx-based threshold switching device

Modulating the Filamentary-Based Resistive Switching Properties of HfO2 Memristive Devices by Adding Al2O3 Layers

Effect of the Gate Dielectric Layer of Flexible InGaZnO Synaptic Thin-Film Transistors on Learning Behavior

Contact Info

Product

Resources

About