Flexible electrical recording from cells using nanowire transistor arrays

Cohen‐Karni, Tzahi; Timko, Brian P.; Weiss, Lucien E.; Lieber, Charles M.

doi:10.1073/pnas.0902752106

Cited by 210 publications

(230 citation statements)

References 32 publications

Supporting

Mentioning

207

Contrasting

Order By: Relevance

“…Semiconductor nanowires (NWs) represent a diverse class of nanomaterials whose synthetically-tunable structural, electronic, and optical properties [1][2][3] have enabled active nanodevices including high-performance field-effect transistors, 4 ultra-sensitive biological probes, [5][6][7] and solar cells and photonic devices with tunable optical spectra. [8][9][10][11][12] NWs can be classified according to the number of degrees of freedom (DoF) they possess, which represent fundamental physical coordinates along which their structure can be manipulated.…”

mentioning

confidence: 99%

Facet-Selective Growth on Nanowires Yields Multi-Component Nanostructures and Photonic Devices

Kempa¹,

Kim

Day

et al. 2013

J. Am. Chem. Soc.

Self Cite

View full text Add to dashboard Cite

Enhanced synthetic control of the morphology, crystal structure, and composition of nanostructures can drive advances in nanoscale devices. Axial and radial semiconductor nanowires are examples of nanostructures with one and two structural degrees of freedom, respectively, and their synthetically tuned and modulated properties have led to advances in nanotransistor, nanophotonic, and thermoelectric devices. Similarly, developing methods that allow for synthetic control of greater than two degrees of freedom could enable new opportunities for functional nanostructures. Here we demonstrate the first regioselective nanowire shell synthesis in studies of Ge and Si growth on faceted Si nanowire surfaces. The selectively deposited Ge is crystalline and its facet position can be synthetically controlled in situ. We use this synthesis to prepare electrically-addressable nanocavities into which solution soluble species such as Au nanoparticles can be incorporated. The method furnishes multi-component nanostructures with unique photonic properties and presents a more sophisticated nanodevice platform for future applications in catalysis and photodetection.Semiconductor nanowires (NWs) represent a diverse class of nanomaterials whose synthetically-tunable structural, electronic, and optical properties 1-3 have enabled active nanodevices including high-performance field-effect transistors, 4 ultra-sensitive biological probes, 5-7 and solar cells and photonic devices with tunable optical spectra. [8][9][10][11][12] NWs can be classified according to the number of degrees of freedom (DoF) they possess, which represent fundamental physical coordinates along which their structure can be manipulated. Axial and radial (core/shell) modulated NWs have 1 and 2 DoF, respectively, and have been extensively studied and characterized. 2,[13][14][15][16][17][18][19] Nevertheless, the properties of nanostructures possessing greater complexity and anisotropy have not been determined.A nanostructure with 3 DoF and higher can be realized by breaking the rotational symmetry of conventional radial shell growth ( Figure 1A). A high-resolution scanning electron micrograph (SEM) of a faceted core/shell Si NW ( Figure 1B) reveals well-defined surfaces that were previously indexed 9 as {111}, {011}, and {113}. NWs with this same morphology and set of surface facets serve as the faceted templates from which all subsequent nanostructures in this study are grown. Following chemical vapor deposition (CVD) synthesis of the SiNW templates, 9 introduction of GeH 4 and H 2 at lower tem- perature and pressure into the same reactor (Supporting Information) yields a new product featuring selective material deposition on the {111} and {011} Si surface facets ( Figure 1B). Energy dispersive x-ray spectroscopy (EDS) performed on the nanostructure ( Figure 1C) confirms the elemental identity of the deposited material as Ge and reveals that facet selectivity is preserved along the length of the nanostructure. A planview transmission electron micrograph (...

show abstract

mentioning

confidence: 99%

Facet-Selective Growth on Nanowires Yields Multi-Component Nanostructures and Photonic Devices

Kempa¹,

Kim

Day

et al. 2013

J. Am. Chem. Soc.

Self Cite

View full text Add to dashboard Cite

show abstract

“…With this method, we have successfully fabricated NW mesh devices on blue wafer mount tapes, Kapton tapes (8), and thermal release tapes (Fig. 3C).…”

mentioning

confidence: 99%

“…S emiconductor nanowires (NWs), because of their unique physical and chemical properties, have great potential for applications in the areas of electronics (1-3), photonics (4-7), and bio/chemical sensors (8)(9)(10)(11)(12)(13), and the current state of the art of NW devices has been reviewed in refs. 14 and 15.…”

mentioning

confidence: 99%

“…14 and 15. In particular, when semiconductor NW devices are fabricated on flexible substrates, they function as versatile building blocks for high performance flexible and/or transparent electronics (16, 17) with possible extension to flexible displays, touch screens, flexible solar cells, and conformable sensors (8,16,17). To realize these NWbased applications, great efforts have been devoted to the fabrication of NW devices on flexible/transparent substrates with methods including conventional photo-and electron beam lithography (6)(7)(8)17).…”

mentioning

confidence: 99%

“…In particular, when semiconductor NW devices are fabricated on flexible substrates, they function as versatile building blocks for high performance flexible and/or transparent electronics (16, 17) with possible extension to flexible displays, touch screens, flexible solar cells, and conformable sensors (8,16,17). To realize these NWbased applications, great efforts have been devoted to the fabrication of NW devices on flexible/transparent substrates with methods including conventional photo-and electron beam lithography (6)(7)(8)17). Although NW devices have been successfully fabricated on plastics, glass, and 17,18), the choice of device substrates is generally restricted because many useful flexible/transparent substrates, such as polydimethylsiloxane (PDMS) and tapes, suffer from problems such as shrinkage or degradation at the processing temperature, poor adhesion to NWs and metal electrodes, incompatibility with solvents and acids, and being too flexible to be handled for the lithography step.…”

mentioning

confidence: 99%

See 2 more Smart Citations

Fabricating nanowire devices on diverse substrates by simple transfer-printing methods

Lee

Kim

Zheng

2010

Proc. Natl. Acad. Sci. U.S.A.

129

105

View full text Add to dashboard Cite

The fabrication of nanowire (NW) devices on diverse substrates is necessary for applications such as flexible electronics, conformable sensors, and transparent solar cells. Although NWs have been fabricated on plastic and glass by lithographic methods, the choice of device substrates is severely limited by the lithographic process temperature and substrate properties. Here we report three new transfer-printing methods for fabricating NW devices on diverse substrates including polydimethylsiloxane, Petri dishes, Kapton tapes, thermal release tapes, and many types of adhesive tapes. These transfer-printing methods rely on the differences in adhesion to transfer NWs, metal films, and devices from weakly adhesive donor substrates to more strongly adhesive receiver substrates. Electrical characterization of fabricated NW devices shows that reliable ohmic contacts are formed between NWs and electrodes. Moreover, we demonstrated that Si NW devices fabricated by the transfer-printing methods are robust piezoresistive stress sensors and temperature sensors with reliable performance.S emiconductor nanowires (NWs), because of their unique physical and chemical properties, have great potential for applications in the areas of electronics (1-3), photonics (4-7), and bio/chemical sensors (8-13), and the current state of the art of NW devices has been reviewed in refs. 14 and 15. In particular, when semiconductor NW devices are fabricated on flexible substrates, they function as versatile building blocks for high performance flexible and/or transparent electronics (16, 17) with possible extension to flexible displays, touch screens, flexible solar cells, and conformable sensors (8,16,17). To realize these NWbased applications, great efforts have been devoted to the fabrication of NW devices on flexible/transparent substrates with methods including conventional photo-and electron beam lithography (6)(7)(8)17). Although NW devices have been successfully fabricated on plastics, glass, and 17,18), the choice of device substrates is generally restricted because many useful flexible/transparent substrates, such as polydimethylsiloxane (PDMS) and tapes, suffer from problems such as shrinkage or degradation at the processing temperature, poor adhesion to NWs and metal electrodes, incompatibility with solvents and acids, and being too flexible to be handled for the lithography step.Here we report three simple transfer-printing methods to fabricate NW devices on diverse substrates including PDMS, Petri dishes, Kapton tapes, thermal release tapes, and many types of adhesive tapes. The three transfer-printing methods basically rely on the differences in adhesion to transfer NWs, metal films, and even entire NW devices from weakly adhesive donor substrates to more strongly adhesive receiver substrates when these two substrates are brought into close physical contact. Previously reported transfer-printing methods, such as microcontact printing, nanoscale-transfer printing, and metal transfer printing (16,(19)(20)(21)(22)(23), have been used...

show abstract

Nanowire Field‐Effect Transistors for Electrical Interfacing with Cells and Tissue

Tian

2012

One‐Dimensional Nanostructures

View full text Add to dashboard Cite

Flexible electrical recording from cells using nanowire transistor arrays

Abstract: cardiomyocyte ͉ multiplexed recording ͉ nanodevice ͉ PDMS ͉ silicon

Cited by 210 publications

References 32 publications

Facet-Selective Growth on Nanowires Yields Multi-Component Nanostructures and Photonic Devices

Facet-Selective Growth on Nanowires Yields Multi-Component Nanostructures and Photonic Devices

Fabricating nanowire devices on diverse substrates by simple transfer-printing methods

Nanowire Field‐Effect Transistors for Electrical Interfacing with Cells and Tissue

Contact Info

Product

Resources

About