Flexible crystalline β-Ga₂O₃solar-blind photodetectors

Abstract

This paper reports a demonstration of β-Ga2O3 nanomembrane (NM) based flexible photodetectors (PDs) and their optoelectrical properties under bending conditions. Flexible β-Ga2O3 NM PDs exhibited a reliable solar-blind photo-detection under...

Current advances in solar-blind photodetection technology: using Ga2O3 and AlGaN

“…Recently, Lai et al 170 investigated the opto-electrical properties of β-Ga 2 O 3 nanomembrane (NM)-based flexible PDs under varying bending conditions. Fig.…”

High‐Performance Solar Blind UV Photodetectors Based on Single‐Crystal Si/β‐Ga2O3 p‐n Heterojunction

“…Yixiong Zheng, Md Nazmul Hasan, and Jung-Hun Seo* DOI: 10.1002/admt.202100254 tion. [7][8][9] Among these UWBG semiconductors, beta phase Ga 2 O 3 (β-Ga 2 O 3 ) has attracted intensive attention as a promising candidate for DUV PDs due to its desirable material properties such as a bandgap of 4.9 eV, excellent mechanical and thermal stability, and availability of large substrate up to 2 inch [10][11][12][13][14] . However, two imperative issues in β-Ga 2 O 3 are: (i) absence of p-type dopant and (ii) unbalanced electron and hole mobility.…”

“…[ 15 , 16 ] It is also predicted that a large difference in carrier mobility of electron (180 cm 2 v −1 s −1 ) and hole (0.01 cm 2 v −1 s −1 ) would exist. [ 17 , 18 ] For these reasons, most β‐Ga 2 O 3 PDs are based on the metal‐semiconductor‐metal type such as Schottky barrier diodes (SBDs), [ 12 , 19 , 22 ] instead of p‐n or p‐i‐n junction type, thus these PDs suffer from low responsivity or quantum efficiency that is associated with a shallow depletion width between metal and β‐Ga 2 O 3 . To overcome these issues, various heterogeneous integration strategies between β‐Ga 2 O 3 and other semiconductors have been investigated.…”

Investigation of Nano‐Gaps in Fractured β‐Ga2O3 Nanomembranes Formed by Uniaxial Strain

“…[ 1–8 ] These properties could enable the development of various electronics and optoelectronic devices such as high‐power transistors and deep ultra‐violet (UV) solar‐blind photodetectors. [ 9–13 ] Recently, a nanoscale freestanding form of β‐Ga 2 O 3, called β‐Ga 2 O 3 nanomembranes (NMs), was developed using the well‐known “Scotch‐tape” method. [ 14–17 ] The creation of β‐Ga 2 O 3 NMs uses an anisotropic monoclinic crystal structure of β‐Ga 2 O 3 that has a larger lattice constant on the a ‐axis than the other two axes ( a = 12.214 Å, b = 3.037 Å, and c = 5.798 Å).…”

“…Such changes in bandgap affect the breakdown electric field in β‐Ga 2 O 3 flexible electronics or peak absorption wavelength in β‐Ga 2 O 3 ‐based solar blind photodetectors. [ 13 ] Furthermore, the formation of nano‐cracks is irreversible, and it degrades the electrical properties of β‐Ga 2 O 3 NMs until nano‐cracks are no longer formed. Therefore, it is crucial to find a way to mitigate or restore the fractures in β‐Ga 2 O 3 NM in order to utilize β‐Ga 2 O 3 as a material for future flexible high power or optoelectronic applications.…”