2022
DOI: 10.1039/d1tc05101f
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Current advances in solar-blind photodetection technology: using Ga2O3 and AlGaN

Abstract: Different variants of novel coronavirus disease are spreading and emerging rapidly all over the world causing a health pandemic. With this sudden outbreak, ultraviolet-C (UV-C) sterilizing devices are being significantly...

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Cited by 65 publications
(45 citation statements)
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References 166 publications
(210 reference statements)
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“…Solar-blind ultraviolet (SBUV) photodetectors have broad application prospects in military and civil fields such as missile warning, space security communications, environmental monitoring, and fire monitoring due to their low background noise, high sensitivity, and strong anti-jamming ability. [1][2][3] In recent years, owing to the unique advantages of all-solid state, small size, intrinsic solar blindness, high thermal and chemical stability, strong radiation resistance, and low energy consumption, SBUV photodetectors fabricated from wide-bandgap semiconductors including AlGaN, [4][5][6][7] Ga 2 O 3 [8][9][10][11][12][13] and ZnMgO, [14][15][16] have attracted significant attention and are generally considered to be the next generation of UV photodetectors. However, the preparation of high-quality AlGaN with high Al composition suitable for solar-blind detection still faces many challenges due to the significant lattice and thermal mismatches between the AlGaN layer and the hetero-substrate and the high surface migration barrier of Al atoms.…”
Section: Introductionmentioning
confidence: 99%
“…Solar-blind ultraviolet (SBUV) photodetectors have broad application prospects in military and civil fields such as missile warning, space security communications, environmental monitoring, and fire monitoring due to their low background noise, high sensitivity, and strong anti-jamming ability. [1][2][3] In recent years, owing to the unique advantages of all-solid state, small size, intrinsic solar blindness, high thermal and chemical stability, strong radiation resistance, and low energy consumption, SBUV photodetectors fabricated from wide-bandgap semiconductors including AlGaN, [4][5][6][7] Ga 2 O 3 [8][9][10][11][12][13] and ZnMgO, [14][15][16] have attracted significant attention and are generally considered to be the next generation of UV photodetectors. However, the preparation of high-quality AlGaN with high Al composition suitable for solar-blind detection still faces many challenges due to the significant lattice and thermal mismatches between the AlGaN layer and the hetero-substrate and the high surface migration barrier of Al atoms.…”
Section: Introductionmentioning
confidence: 99%
“…3 They generally require an external energy source for their operation and this adds to the overall cost of the device system. 3 Thus, the present research on PDs emphasizes self-powered PDs and photovoltaics, [4][5][6][7] and various strategies have been employed to achieve self-powered detection. These include utilizing devices based on p-n junctions, the photothermoelectric effect, asymmetric contacts in linear configurations, heterojunctions having a large difference in the carrier concentrations of the constituent semiconductors, and so on.…”
Section: Introductionmentioning
confidence: 99%
“…In recent decades, benefiting from the development of wide-bandgap (WBG) semiconductors, solar-blind deep-ultraviolet (DUV) detection has been paid much attention because of its significant applications in remote control, biochemical detection, flame detection, secure communications, and solar XUV-VUV radiometers. Furthermore, exposure to UV-C radiation is a concern due to its ability to kill viruses when dealing with pandemic threats . However, UV-C radiation may adversely affect the surrounding environment and humans, so the UV light intensity needs to be carefully checked and adjusted, especially by suitable photodetection equipment.…”
Section: Introductionmentioning
confidence: 99%