2022
DOI: 10.1016/j.applthermaleng.2021.117818
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Flexible Bi2Te3-based thermoelectric generator with an ultra-high power density

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Cited by 57 publications
(30 citation statements)
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“…Flexible thermoelectric (TE) technology can convert body heat into electricity to power wearable electronics, which is attracting great interests from both academia and industry. [ 1 , 2 , 3 , 4 , 5 ] Flexible TE technology requires high performance flexible TE materials to fabricate high power density flexible TE device. The performance of TE materials can be evaluated by the figure‐of‐merit zT = S 2 σT / κ , where S , σ , κ , and T are Seebeck coefficient, electrical conductivity, thermal conductivity, and absolute temperature, respectively.…”
Section: Introductionmentioning
confidence: 99%
“…Flexible thermoelectric (TE) technology can convert body heat into electricity to power wearable electronics, which is attracting great interests from both academia and industry. [ 1 , 2 , 3 , 4 , 5 ] Flexible TE technology requires high performance flexible TE materials to fabricate high power density flexible TE device. The performance of TE materials can be evaluated by the figure‐of‐merit zT = S 2 σT / κ , where S , σ , κ , and T are Seebeck coefficient, electrical conductivity, thermal conductivity, and absolute temperature, respectively.…”
Section: Introductionmentioning
confidence: 99%
“…Generally, flexible devices are mainly used at near room-temperature so traditional Bi 2 Te 3 -based materials with the highest room-temperature thermoelectric performance are still preferred for FTG. 20 However, their rigid mechanical property and toxicity limit their applications. Although many new promising thermoelectric materials have been found in the last few decades, most of them have low ZT values at near room-temperature, especially in n-type materials.…”
Section: Introductionmentioning
confidence: 99%
“…At ΔT = 14, 21, and 28 K, the power density for SCO9 reads 1.1, 2.6, and 4.5 W m −2 , respectively. The normalized power density is thereby calculated between 0.56 and 0.59 µW K −2 cm −2 , which ranks the top level among those reported Bi 2 Te 3 and Bi 2 Te 3 -based film devices, [40][41][42][43] see Figure S7, Supporting Information.…”
Section: Resultsmentioning
confidence: 93%