Flexible and Transparent Thin-Film Transistors Based on Two-Dimensional Materials for Active-Matrix Display

Park, Hamin; Oh, Dong Sik; Lee, Khang June; Jung, Dong Yun; Lee, Seung‐Hee; Yoo, Seunghyup; Choi, Sung‐Yool

doi:10.1021/acsami.9b18945

Cited by 35 publications

(32 citation statements)

References 36 publications

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“…Flexible and transparent TFTs have been fabricated based on the 2D heterostructures developed by CVD‐grown graphene, MoS 2 , and h‐BN. [ 261 ] Finally, the large‐scale, flexible, and transparent 2D TFTs have also been used as the backplane of active‐matrix organic light‐emitting diodes. The TFTs showed high flexibility, transmittance, and superior electrical performance.…”

Section: Applications Of 2d Iii‐nitride Materialsmentioning

confidence: 99%

2D III‐Nitride Materials: Properties, Growth, and Applications

et al. 2021

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2D III‐nitride materials have been receiving considerable attention recently due to their excellent physicochemical properties, such as high stability, wide and tunable bandgap, and magnetism. Therefore, 2D III‐nitride materials can be applied in various fields, such as electronic and photoelectric devices, spin‐based devices, and gas detectors. Although the developments of 2D h‐BN materials have been successful, the fabrication of other 2D III‐nitride materials, such as 2D h‐AlN, h‐GaN, and h‐InN, are still far from satisfactory, which limits the practical applications of these materials. In this review, recent advances in the properties, growth methods, and potential applications of 2D III‐nitride materials are summarized. The properties of the 2D III‐nitride materials are mainly obtained by first‐principles calculations because of the difficulties in the growth and characterizations of these materials. The discussion on the growth of 2D III‐nitride materials is focused on 2D h‐BN and h‐AlN, as the developments of 2D h‐GaN and h‐InN are yet to be realized. Therefore, applications have been realized mostly based on the 2D h‐BN materials; however, many potential applications are cited for the entire range of 2D III‐nitride materials. Finally, future research directions and prospects in this field are also discussed.

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Section: Applications Of 2d Iii‐nitride Materialsmentioning

confidence: 99%

2D III‐Nitride Materials: Properties, Growth, and Applications

et al. 2021

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“…According to relevant references, [10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25][26][27][28][29] the key component of the TOLED was the cathode layer. The cathode transparency determines the panel transmittance.…”

Section: Design and Embodimentmentioning

confidence: 99%

“…20,24,25 In recent years, Korea advanced institute of science and technology (KAIST) developed a flexible TOLED with a ZnS-based multilayer transparent electrode, as well as LiF/aluminum (Al)/Ag and molybdenum oxide (MoOx) polymer conductive solution (PEDOT:PSS) graphene electrode layers. 26,27 Yin used pure thin metal electrodes such as Ag and Au to develop TOLEDs. 28 Li used metal oxide/ultrathin Ag/polymer (MAP) and Ca/Ag as the cathode and anode, respectively, to create a TOLED on an industrial-grade polyethylene naphthalate (I-PEN) substrate.…”

Section: Introductionmentioning

confidence: 99%

A flexible transparent organic light‐emitting display with high‐transmittance cathode and high‐contrast electrochromic shutter

Tsai

Ou-Yang

2021

J Soc Info Display

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In this work, we studied a flexible transparent organic light-emitting display (TOLED) with a stacking magnesium (Mg) and silver (Ag) alloys (Mg: Ag)/1,4,5,8,9,11-hexaazatriphenylenehexacarbonitrile (HATCN)/indium zinc oxide (IZO) transparent cathode and combined it with a high-contrast flexible electrochromic shutter (ECS). The transmittance of the segment-type flexible TOLED based on an 84.5% transparent polyimide substrate was 64.2%. The sheet resistance of the TOLED cathode used in this study was 22.94 Ω/sq, which was close to the value needed in OLED cathode applications. The flexible ECS was composed of two color-changing layers, namely, a hybrid electrochromic layer and a color-changing gel electrolyte layer, and the contrast ratio of the flexible ECS was 24.5. The ECS blocked background light and increased the contrast ratio of the flexible TOLED panel. The flexible OLED and flexible ECS were bonded with an optical clear adhesive (OCA) film, and the transmittance of the entire structure was 52.3%. After 2,000 folding repetitions of the integral sample with a folding radius of 3 cm, the ECS maintained its coloration characteristics, and TOLED retained a brightness level of 200 nits.

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“…[ 62 ] The atomically thin BN also have the ability to manipulate the charge carrier density in the channel, by switching the capacitance states. Furthermore, these transistors can be combined to create multifunctional devices, such as the application in diodes, [ 58,63–65 ] rectifiers, [ 60,66,67 ] detectors, [ 4,65,68,69 ] light‐emitting diodes, [ 31,65,66 ] and photovoltaics, [ 5,67,70 ] which are promising candidates for future low‐power‐consumption smart integrated circuits. [ 71–74 ]…”

Section: Introductionmentioning

confidence: 99%

Building Functional Memories and Logic Circuits with 2D Boron Nitride

Liu

Chen

Wang

et al. 2020

Adv Funct Materials

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The fast development of synthesis routes and preparation technology of 2D materials has motivated a rapid growth in the micro‐ and nanoelectronic memory devices, which gives rise to the breakthroughs in the semiconductor research area. Hexagon boron nitride (h‐BN) with excellent chemical, mechanical, and optical properties has been proven to have potential in overcoming the scaling limit to nanometer, and even sub‐nanometer lengths to replace the use of thick and stiff blocking dielectrics in two‐terminal or three‐terminal devices. The use of atomically thin h‐BN or h‐BN van der Waals heterostructures (vdWhs) can improve the reliability, capability, and functionality of memory devices. This is an encouraging strategy toward high‐density on‐chip integrated circuits, which has recently earned considerable interest. While the research in h‐BN material properties and characterization is comprehensively verified, specified mechanisms of resistive switching have not been analyzed in‐depth. Moreover, recent concern about novel structure design and expanding applications in electronics, optoelectronics, and spintronics has arisen. In this review, recent progress in h‐BN memories with volatile or nonvolatile properties is presented, expanding the memories to functional applications, and further challenges of the development of h‐BN‐based memories and logic circuits are discussed.

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Flexible and Transparent Thin-Film Transistors Based on Two-Dimensional Materials for Active-Matrix Display

Cited by 35 publications

References 36 publications

2D III‐Nitride Materials: Properties, Growth, and Applications

2D III‐Nitride Materials: Properties, Growth, and Applications

A flexible transparent organic light‐emitting display with high‐transmittance cathode and high‐contrast electrochromic shutter

Building Functional Memories and Logic Circuits with 2D Boron Nitride

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