Flexible and Transparent MoS₂ Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures

Abstract

Atomically thin forms of layered materials, such as conducting graphene, insulating hexagonal boron nitride (hBN), and semiconducting molybdenum disulfide (MoS2), have generated great interests recently due to the possibility of combining diverse atomic layers by mechanical "stacking" to create novel materials and devices. In this work, we demonstrate field-effect transistors (FETs) with MoS2 channels, hBN dielectric, and graphene gate electrodes. These devices show field-effect mobilities of up to 45 cm(2)/Vs and operating gate voltage below 10 V, with greatly reduced hysteresis. Taking advantage of the mechanical strength and flexibility of these materials, we demonstrate integration onto a polymer substrate to create flexible and transparent FETs that show unchanged performance up to 1.5% strain. These heterostructure devices consisting of ultrathin two-dimensional (2D) materials open up a new route toward high-performance flexible and transparent electronics.

Photo-FETs: Phototransistors Enabled by 2D and 0D Nanomaterials

“…Monolayer MoS2 photodetectors are especially promising for flexible and semitransparent device concepts due to its mechanical flexibility and strength [52][53][54][55] . One of the most intriguing properties of monolayer MoS2 is its large direct bandgap of 1.8eV, which leads to high absorption efficiency 56,57 and large electrical on/off ratios.…”

Independent Band Modulation in 2D van der Waals Heterostructures via a Novel Device Architecture

“…Recently, considerable research interest has been intrigued by the vertically stacked vdWs integration of various 2DLMs, which provides infinite possibilities by overcoming the limitation of lattice matching and processing compatibility 6, 7, 8, 9, 10, 11, 12, 13, 14. Among various categories of vertically stacked vdWs heterostructured devices, the tunneling field effect transistor (TFET), which provides a promising sub‐60‐mV dec −1 subthreshold swing (SS), has been regarded as a promising application of vdWs heterostructure for future energy‐efficient electronics 15, 16, 17, 18, 19…”

Identifying different stacking sequences in few-layer CVD-grownMoS2by low-energy atomic-resolution scanning transmission electron microscopy

“…For instance, the gas sensing behavior of few-layer thick MoS 2 has been found to be better than that of single-layer MoS 2 due to the instability of the single-layer form in reactive gas environments [9,10]. Another example is that few-layer MoS 2 usually displays higher carrier mobility than that of single-layer MoS 2 in various heterostructured FET configurations [11][12][13].…”