Flexible aluminum-doped hafnium oxide ferroelectric synapse devices for neuromorphic computing

Abstract

The HfO2-based ferroelectric tunnel junction has received outstanding attention owing to the high-speed and low-power characteristics. In this work, the aluminum doped HfO2 (HfAlO) ferroelectric thin films are deposited on...

Synapse with Diverse Plasticity in Ferroelectric BaTiO3 Thin Films for Neuromorphic Computing

“…Each output neuron produces a normalized signal from 0 to 1 by a sigmoid function. Each time an input signal is fed into a single-layer network, the synaptic weights are updated appropriately according to the learning algorithm. , Such a process for weight update is called the learning process in a neural network. After the synaptic weights associated with the specific input pattern were determined, the neural network was thoroughly trained and is capable of accurately recognizing this specific input pattern.…”

Mechanism of the Wake-Up and the Split-Up in AlOx/Hf0.5Zr0.5Ox Film

“…VV r ; then, −0.5a 6 is taken as the value of ρ(V, V r ). The number of data points on a local grid is (2SF + 1) 2 , where SF is the smoothing factor. Here, SF is set as 1, which corresponds to a 3 × 3 grid [27].…”

“…Ferroelectric HfO 2 thin film has been investigated with various fabrications for applications because of their scalability and compatibility with the traditional complementary metal-oxide-semiconductor [ 1 , 2 , 3 , 4 , 5 , 6 , 7 , 8 , 9 , 10 , 11 , 12 , 13 ]. Particularly for reliability in applications such as memory devices and negative capacitance devices, the evolution of the P – V hysteresis loop has been studied during polarization switching cycles [ 14 , 15 , 16 , 17 ].…”

Low-power and high-speed HfLaO-based FE-TFTs for artificial synapse and reconfigurable logic applications

“…18,19 Among them, hafnium-based ferroelectric field effect transistors (FeFETs) have attracted a lot of attention due to their advantages such as scalability, 20 low power consumption, and fast response speed, and are potential candidates for implementing logic and storage in a single transistor. 21–23 Among the various doping elements, such as Zr, 24,25 Al 26,27 and La 28–30 etc. , the La atom has gradually become popular for researchers due to its large ionic radius, low electronegativity and strongest stabilizing effect on HfO 2 .…”