Flash Technology: Challenges and Opportunities

Giridhar, R. V.

doi:10.1143/jjap.35.6347

Cited by 11 publications

(5 citation statements)

References 11 publications

(16 reference statements)

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“…By comparing such FTJ with elements [10] in other memories such as Flash memory [11], however, we find out that there are few studies on the multiple-valued (or multi-level) cell property [11], which allows many bits to be stored in each memory cell, and reduces the memory cell size by 1/(the number of bits). If such a property is included in the FTJ, they will function as a more efficient memory cell than the conventional one.…”

Section: Introductionmentioning

confidence: 99%

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Molten KOH Etching with Na₂O₂ Additive for Dislocation Revelation in 4H-SiC Epilayers and Substrates

Yao

Ishikawa

Sugawara

et al. 2011

Jpn. J. Appl. Phys.

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In considering a novel function in ferromagnetic tunnel junctions consisting of ferromagnet (FM)/barrier/FM junctions, we have theoretically investigated the multiple-valued (or multi-level) cell property, which is in principle realized by sensing the conductances of four states recorded with magnetization configurations of two FMs; that is, (up, up), (up, down), (down, up), (down, down). To obtain such 4-valued conductances, we propose FM1/spin-polarized barrier/FM2 junctions, where FM1 and FM2 are different ferromagnets, and the barrier has spin dependence. The proposed idea is applied to the case of the barrier having localized spins. Assuming that all the localized spins are pinned parallel to the magnetization axes of FM1 and FM2, 4-valued conductances are explicitly obtained for the case of many localized spins. Furthermore, objectives for an ideal spin-polarized barrier are discussed.

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Section: Introductionmentioning

confidence: 99%

“…In this paper, we theoretically investigate the multiple-valued cell property [11] in the FTJ. In a possible scheme, the recorded states are supposed to be four magnetization configurations of two FMs consisting of (up, up), (up, down), (down, up), (down, down), which are obtained by applying magnetic fields to respective FMs.…”

Section: Introductionmentioning

confidence: 99%

Molten KOH Etching with Na₂O₂ Additive for Dislocation Revelation in 4H-SiC Epilayers and Substrates

Yao

Ishikawa

Sugawara

et al. 2011

Jpn. J. Appl. Phys.

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“…Studies from another viewpoints far from the miniaturization should be necessary simultaneously. In fact, for other memories [12] such as the Flash memory [13], multiple valued (or multi-level) cell property [13], which allows the plural bits to be stored in each memory cell and accordingly reduces the memory cell size by 1/(the number of bits), has been extensively studied. On the other hand, there are few studies for the SPJ.…”

Section: Introductionmentioning

confidence: 99%

A theoretical study on spin-dependent transport of ferromagnet/carbon nanotube encapsulating magnetic atoms/ferromagnet junctions with four-valued conductances

Kokado

Harigaya

2004

J. Phys.: Condens. Matter

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As a novel function of ferromagnet (FM)/spacer/FM junctions, we theoretically investigate multiple-valued (or multi-level) cell property, which is in principle realized by sensing conductances of four states recorded with magnetization configurations of two FMs; (up,up), (up,down), (down,up), (down,down). In order to sense all the states, 4-valued conductances corresponding to the respective states are necessary. We previously proposed that 4-valued conductances are obtained in FM1/spin-polarized spacer (SPS)/FM2 junctions, where FM1 and FM2 have different spin polarizations, and the spacer depends on spin [J. Phys.: Condens. Matter 15, 8797 (2003)]. In this paper, an ideal SPS is considered as a single-wall armchair carbon nanotube encapsulating magnetic atoms, where the nanotube shows on-resonance or off-resonance at the Fermi level according to its length. The magnitude of the obtained 4valued conductances has an opposite order between the on-resonant nanotube and the off-resonant one, and this property can be understood by considering electronic states of the nanotube. Also, the magnetoresistance ratio between (up,up) and (down,down) can be larger than the conventional one between parallel and anti-parallel configurations.

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“…[1][2][3][4] There are two basic approaches possible-subtractive or additive processes. [1][2][3][4] There are two basic approaches possible-subtractive or additive processes.…”

Section: Introductionmentioning

confidence: 99%

Plasma chemistries for dry etching of NiFe and NiFeCo

Jung

Hong

Cho

et al. 1998

Journal of Elec Materi

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Plasma chemistries based on chlorine, bromine, or iodine have been investigated for inductively coupled plasma etching of NiFe and NiFeCo. There is clear evidence of a chemically enhanced etch mechanism with both Cl 2 -and I 2 -based mixtures, with no enhancement present for Br 2 chemistries. Etch yields are typically low (≤0.25), emphasizing the need for high ion fluxes in order to achieve practical material removal rates.

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Flash Technology: Challenges and Opportunities

Cited by 11 publications

References 11 publications

Molten KOH Etching with Na₂O₂ Additive for Dislocation Revelation in 4H-SiC Epilayers and Substrates

Molten KOH Etching with Na₂O₂ Additive for Dislocation Revelation in 4H-SiC Epilayers and Substrates

A theoretical study on spin-dependent transport of ferromagnet/carbon nanotube encapsulating magnetic atoms/ferromagnet junctions with four-valued conductances

Plasma chemistries for dry etching of NiFe and NiFeCo

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Flash Technology: Challenges and Opportunities

Cited by 11 publications

References 11 publications

Molten KOH Etching with Na2O2 Additive for Dislocation Revelation in 4H-SiC Epilayers and Substrates

Molten KOH Etching with Na2O2 Additive for Dislocation Revelation in 4H-SiC Epilayers and Substrates

A theoretical study on spin-dependent transport of ferromagnet/carbon nanotube encapsulating magnetic atoms/ferromagnet junctions with four-valued conductances

Plasma chemistries for dry etching of NiFe and NiFeCo

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Product

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Molten KOH Etching with Na₂O₂ Additive for Dislocation Revelation in 4H-SiC Epilayers and Substrates

Molten KOH Etching with Na₂O₂ Additive for Dislocation Revelation in 4H-SiC Epilayers and Substrates