1999
DOI: 10.1117/12.354349
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Flare impact on the intrafield CD control for sub-0.25-μm patterning

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Cited by 10 publications
(8 citation statements)
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“…I wafer for dipole illumination is larger than that for annular illumination because dipole can capture a greater fraction of 1 st order beams. (equation 14), and 15)) This explains why dipole illumination shows smaller MEEF. As to the mask bias, the bias dependency can be explained with the duty ratio, s/p.…”
Section: Eq 12mentioning
confidence: 79%
“…I wafer for dipole illumination is larger than that for annular illumination because dipole can capture a greater fraction of 1 st order beams. (equation 14), and 15)) This explains why dipole illumination shows smaller MEEF. As to the mask bias, the bias dependency can be explained with the duty ratio, s/p.…”
Section: Eq 12mentioning
confidence: 79%
“…The y-intercept of the linear portion of the curve can be thought of as the short range contribution to the total flare. Flare is also a function of field position, with points in the center of the field often experiencing flare levels 50% higher than points near the edge of the field [3]. This phenomenon may be thought of as a side effect of the long range versus short range scattering discussed above.…”
Section: Aerial Image With No Flarementioning
confidence: 96%
“…Luce performed a test varying the pad size [3], showing flare increasing from 6.8% for a 400µm pad, to 7% for a 10µm pad, to about 7.5% for a 5µm pad, and finally to 8% for a 2µm pad (corresponding to k 1 = 4.5 on the stepper used). Since the last data point should show some diffraction effects confounding the flare measurements, one could conclude that flare contributed from an area farther away than ±200µm amounted to 6.8%, while the shorter range flare coming from an area of 400X400µm 2 around the feature contributed another 1% approximately ( Figure 4).…”
Section: Measuring Flare -The Detailsmentioning
confidence: 99%
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