Five-second coherence of a single spin with single-shot readout in silicon carbide

Anderson, Christopher P.; Glen, Elena O.; Zeledon, Cyrus; Bourassa, Alexandre; Yu, Junsheng; Zhu, Yongnan; Vorwerk, Christian K.; Crook, Alexander L.; Abe, Hiroshi; Ul-Hassan, Jawad; Ohshima, Takeshi; Són, Nguyên Tiên; Galli, Giulia; Awschalom, D. D.

doi:10.48550/arxiv.2110.01590

Cited by 4 publications

(5 citation statements)

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“…We get for the excited-state decay rate Γ e = (2.7 ± 0.4) MHz, for the Rabi frequency Ω c = 7.4 MHz at 1 mW control beam power, and for the ensemble-averaged ground-state dephasing rate γ * g = (0.23 ± 0.06) MHz. The inverse of the last value represents the ensemble-averaged ground-state coherence time T * 2 = (4.3 ± 0.5) µs, which is slightly longer than what was found in microwave experiments on similar ensembles of c-axis divacancy defects 33 , yet orders of magnitude shorter than the recently reported decoherence time of single divacancy defects 34 . This indicates that the simultaneous driving of various optical transitions in our experiment does not significantly add to spin dephasing.…”

Section: Model For Asymmetric Eitmentioning

confidence: 59%

Electromagnetically induced transparency in inhomogeneously broadened divacancy defect ensembles in SiC

Zwier,

Bosma,

Gilardoni

et al. 2022

Preprint

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Electromagnetically induced transparency (EIT) is a phenomenon that can provide strong and robust interfacing between optical signals and quantum coherence of electronic spins. In its archetypical form, mainly explored with atomic media, it uses a (near-)homogeneous ensemble of three-level systems, in which two lowenergy spin-1/2 levels are coupled to a common optically excited state. We investigate the implementation of EIT with c-axis divacancy color centers in silicon carbide. While this material has attractive properties for quantum device technologies with near-IR optics, implementing EIT is complicated by the inhomogeneous broadening of the optical transitions throughout the ensemble and the presence of multiple ground-state levels. These may lead to darkening of the ensemble upon resonant optical excitation. Here, we show that EIT can be established with high visibility also in this material platform upon careful design of the measurement geometry. Comparison of our experimental results with a model based on the Lindblad equations indicates that we can create coherences between different sets of two levels all-optically in these systems, with potential impact for RF-free quantum sensing applications. Our work provides understanding of EIT in multi-level systems with significant inhomogeneities, and our considerations are valid for a wide array of defects in semiconductors.

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Section: Model For Asymmetric Eitmentioning

confidence: 59%

Electromagnetically induced transparency in inhomogeneously broadened divacancy defect ensembles in SiC

Zwier,

Bosma,

Gilardoni

et al. 2022

Preprint

Self Cite

View full text Add to dashboard Cite

show abstract

“…The inverse of the last value represents the ensemble-averaged ground-state coherence time T * 2 ¼ (4:3 + 0:5) μs, which is slightly longer than what was found in microwave experiments on similar ensembles of c-axis divacancy defects, 33 yet orders of magnitude shorter than the recently reported decoherence time of single divacancy defects. 34 This indicates that the simultaneous driving of various optical transitions in our experiment does not significantly add to spin dephasing.…”

Section: Journal Of Applied Physicsmentioning

confidence: 63%

“…SiC is widely used in the semiconductor device industry and is compatible with silicon-based electronics, making SiC a promising platform for many electro-optical applications. Divacancies in SiC exhibit seconds-long spin-coherence times 33,34 and allow mapping of electronic spin states onto nuclear spins, 35,36 both of these at room temperature. Divacancy quantum emitters can be addressed in many ways.…”

Section: Introductionmentioning

confidence: 99%

Electromagnetically induced transparency in inhomogeneously broadened divacancy defect ensembles in SiC

Zwier

Bosma

Gilardoni

et al. 2022

Journal of Applied Physics

Self Cite

View full text Add to dashboard Cite

Electromagnetically induced transparency (EIT) is a phenomenon that can provide strong and robust interfacing between optical signals and quantum coherence of electronic spins. In its archetypical form, mainly explored with atomic media, it uses a (near-)homogeneous ensemble of three-level systems, in which two low-energy spin-1/2 levels are coupled to a common optically excited state. We investigate the implementation of EIT with c-axis divacancy color centers in silicon carbide. While this material has attractive properties for quantum device technologies with near-IR optics, implementing EIT is complicated by the inhomogeneous broadening of the optical transitions throughout the ensemble and the presence of multiple ground-state levels. These may lead to darkening of the ensemble upon resonant optical excitation. Here, we show that EIT can be established with high visibility also in this material platform upon careful design of the measurement geometry. Comparison of our experimental results with a model based on the Lindblad equations indicates that we can create coherences between different sets of two levels all-optically in these systems, with potential impact for RF-free quantum sensing applications. Our work provides an understanding of EIT in multi-level systems with significant inhomogeneities, and our considerations are valid for a wide array of defects in semiconductors.

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“…Such a technique is important for QT since it allows high sensitivity electronics to be leveraged and may enable single-shot electrical spin read-out as demonstrated with the V Si V C . 131 Such capabilities are central to entanglement distribution for quantum net-works.…”

Section: (B) the 70 Mhz Zero Field Splitting Observed For V −mentioning

confidence: 99%

Characterization methods for defects and devices in silicon carbide

Bathen

Lew

Woerle

et al. 2022

Journal of Applied Physics

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Significant progress has been achieved with silicon carbide (SiC) high power electronics and quantum technologies, both drawing upon the unique properties of this material. In this Perspective, we briefly review some of the main defect characterization techniques that have enabled breakthroughs in these fields. We consider how key data have been collected, interpreted, and used to enhance the application of SiC. Although these fields largely rely on separate techniques, they have similar aims for the material quality and we identify ways in which the electronics and quantum technology fields can further interact for mutual benefit.

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Five-second coherence of a single spin with single-shot readout in silicon carbide

Cited by 4 publications

References 0 publications

Electromagnetically induced transparency in inhomogeneously broadened divacancy defect ensembles in SiC

Electromagnetically induced transparency in inhomogeneously broadened divacancy defect ensembles in SiC

Electromagnetically induced transparency in inhomogeneously broadened divacancy defect ensembles in SiC

Characterization methods for defects and devices in silicon carbide

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