First step to Si photonics: synthesis of quantum dot light‐emitters on GaP substrate by MBE

Abstract

International audienceWe have grown InAs and InP quantum dots (QDs) on GaP substrate by Molecular Beam Epitaxy (MBE) and analysed them by Atomic Force Microscopy (AFM) and photoluminescence (PL). AFM images confirm the formation of InAs and InP QDs. Largest InAs QDs density is obtained at a growth temperature of 450 °C and under an AsH3 flux of 0.3SCCM. The evolution of QDs shape and absence of photoluminescence indicate a likely plastic relaxation of the strain between InAs and GaP. Concerning InP/GaP QDs, their lateral size, height and density indicate good quality QDs. Photoluminescence signal has been detected for capped InP/GaP QDs until 180 K. The unchanged peak position with respect to InP coverage is attributed to the nearly constant height of the QDs

Electronic states of (InGa)(AsSb)/GaAs/GaP quantum dots

“…The initially obvious choice of employing InGaP as active material fails due to the borderline type-I/II nature of the bandoffset to GaP [2]. (In,Ga)As/GaP, by contrast, features a type-I lineup and triggered a fair amount of research, both experimental and theoretical in nature [3][4][5][6][7][8][9]. The main issue with this material combination is the large lattice mismatch and the resulting large strain in the (In,Ga)As active material, possibly leading to directindirect crossover of the ground state transition.…”

X-ray study of antiphase domains and their stability in MBE grown GaP on Si

“…This opens the route for direct bandgap growth on GaP-Si pseudo-substrate [1,2]. However, long-term stable device performance implies reproducible achievement of defect-free interfaces between III-V and Si.…”

InAs Quantum Dot Growth on a Thin GaNP Buffer Layer on GaP by Metalorganic Chemical Vapor Deposition

“…The InAs-based QDs grown by chemical beam epitaxy and molecular beam epitaxy (MBE) on a GaP substrate that has a lattice constant similar to that of Si have been reported. [4][5][6] The GaInAs QDs on GaP grown by metalorganic chemical vapor deposition (MOCVD) and MBE have also been investigated to control the strain amount. 7,8) These reported growth techniques and optical properties will be applied directly to the material system on Si.…”