First-Principles Thermodynamics of Graphene Growth on Cu Surfaces

Zhang, Wenhua; Wu, Ping; Li, Zhenyu; Yang, Jinlong

doi:10.1021/jp2006827

Cited by 326 publications

(448 citation statements)

References 29 publications

(54 reference statements)

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“…8,24 Further discussions about the growth mechanism can be found in Supplementary Information. 30 Indeed, in the presence of surface O, the overall dehydrogenation barrier of CH 4 dramatically decreases to ~1.4eV (Fig. 3c), comparable to the barrier for SLG growth.…”

mentioning

confidence: 81%

Oxygen-activated growth and bandgap tunability of large single-crystal bilayer graphene

et al. 2016

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mentioning

confidence: 81%

Oxygen-activated growth and bandgap tunability of large single-crystal bilayer graphene

et al. 2016

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“…Therefore, the Cu (111) surface represents a more favorable reaction pathway for nucleation. Moreover, the diffusion of carbon species groups is much faster on (111) surface than that on (200) surface of commonly used polycrystalline Cu foil 30 . We believe that the nucleation kinetics is depended mostly on the surface state of Cu catalyst rather than on the growth temperature.…”

Section: Resultsmentioning

confidence: 98%

“…The Cu (111) surface can be obtained with recrystallized Cu foil. According to the simulation studies, C 2 H 2 can be easily formed from CH 4 on the Cu (111) surface 30 . Therefore, the Cu (111) surface represents a more favorable reaction pathway for nucleation.…”

Section: Resultsmentioning

confidence: 98%

Electromagnetic induction heating for single crystal graphene growth: morphology control by rapid heating and quenching

Chen

et al. 2015

Sci Rep

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The direct observation of single crystal graphene growth and its shape evolution is of fundamental importance to the understanding of graphene growth physicochemical mechanisms and the achievement of wafer-scale single crystalline graphene. Here we demonstrate the controlled formation of single crystal graphene with varying shapes, and directly observe the shape evolution of single crystal graphene by developing a localized-heating and rapid-quenching chemical vapor deposition (CVD) system based on electromagnetic induction heating. Importantly, rational control of circular, hexagonal, and dendritic single crystalline graphene domains can be readily obtained for the first time by changing the growth condition. Systematic studies suggest that the graphene nucleation only occurs during the initial stage, while the domain density is independent of the growth temperatures due to the surface-limiting effect. In addition, the direct observation of graphene domain shape evolution is employed for the identification of competing growth mechanisms including diffusion-limited, attachment-limited, and detachment-limited processes. Our study not only provides a novel method for morphology-controlled graphene synthesis, but also offers fundamental insights into the kinetics of single crystal graphene growth.C hemical vapor deposition (CVD) has enabled the growth of single layer graphene over large area through the optimization of synthesis conditions 1-3 , including hydrogen and carbon precursors flow rates 4-6 , surface oxygen 7 , substrate 8,9 , temperature 10 , and pressure 11 . In order to achieve large size and high-quality single crystal graphene, a fundamental understanding of precise mechanisms that governs the formation of graphene domains is necessary. Much effort has been placed on the investigation of graphene growth kinetics by using carbon isotope labeling technique 7,12,13 , or the empirical parameters-controlled methods based on the nucleation and growth theory 14 . It has been widely accepted that the graphene growing process mainly involves surface catalytic reaction for catalyst with low-carbon solubility 1,13 . In this case, graphene nucleation on catalyst surface is one of the critical steps in the growth process. Various factors affect the initiation of graphene nucleation process, including the type or surface morphology of catalyst 15,16 , carbon source 17 , carbon segregation from metalcarbon melts 18 , and parameters in CVD growth 2,19,20 . In general, nucleation densities on polycrystal Cu substrates are nonuniform, representing a key problem in high quality graphene film synthesis. Recently it has been found that uniform nucleation distribution, low nucleation density and highly ordered single crystal graphene films can be obtained by using liquid Cu film as catalytic, which is possibly due to the elimination of Cu grain boundaries 21,22 . However, the direct insight of single crystal graphene growth and its corresponding domain shape evolution during the growth process are still lacking. The chall...

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“…The transition metals, alloys, and liquid metals have been recognized as the catalyst for growth of monolayer and bilayer graphene, where the surface composition of solid catalyst substrates also plays critical role on graphene growth. The thermodynamic and kinetic parameters are also crucial in graphene growth process, where pressure and temperature are both key factors [32][33][34][35][36][37][38][39]. The graphene growth mechanisms are discussed for the atmospheric and low pressure CVD technique in the following section.…”

Section: Development Of Chemical Vapor Deposition Processmentioning

confidence: 99%

“…[31][32][33][34][35][36][37][38][39][49][50][51][52][53]. Growth of pyrolytic carbon films or layers of graphite have been first observed on Ni catalyst with introduction of hydrocarbon or evaporated carbon materials [30,54].…”

Section: Single Transition Metal Catalystmentioning

confidence: 99%

Fundamentals of Chemical Vapor Deposited Graphene and Emerging Applications

Kalita¹,

Tanemura²

2017

Graphene Materials - Advanced Applications

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Graphene, the atomically thin sheet of sp 2 hybridized carbon atoms arranged in honeycomb structure, is becoming the forefront of material research. The chemical vapor deposition (CVD) process has been explored significantly to synthesis large size single crystals and uniform films of monolayer and bilayer graphene. In this prospect, the nucleation and growth mechanism of graphene on a catalytic substrate play the fundamental role on the control growth of layers and large domain. The transition metals and their alloys have been recognized as the active catalyst for growth of monolayer and bilayer graphene, where the surface composition of such catalysts also plays critical role on graphene growth. CVD-synthesized graphene has been integrated with bulk semiconductors such as Si and GaN for the fabrication of solar cells, photodetectors, and lightemitting diodes. Furthermore, CVD graphene has been integrated with hexagonal boron nitride (hBN) and transition metal dichalcogenides (TMDCs) for the fabrication of van der Waals heterostructure for nanoelectronic, optoelectronic, energy devices, and other emerging technologies. The fundamental of the graphene growth process by a CVD technique and various emerging applications in heterostructure devices is discussed in detail.

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First-Principles Thermodynamics of Graphene Growth on Cu Surfaces

Cited by 326 publications

References 29 publications

Oxygen-activated growth and bandgap tunability of large single-crystal bilayer graphene

Oxygen-activated growth and bandgap tunability of large single-crystal bilayer graphene

Electromagnetic induction heating for single crystal graphene growth: morphology control by rapid heating and quenching

Fundamentals of Chemical Vapor Deposited Graphene and Emerging Applications

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