First principles study of structural, electronic and optical properties of indium gallium nitride arsenide lattice matched to gallium arsenide

Ziane, Mohamed Issam; Bensaad, Zouaoui; Ouahrani, Tarik; Bennacer, Hamza

doi:10.1016/j.mssp.2014.08.039

Cited by 35 publications

(7 citation statements)

References 60 publications

(57 reference statements)

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“…Due to the cubic symmetry, the optical properties of InAs and InSb bulk are isotropic and therefore independent on whether the electric field is polarized along the x-, y-and z-axis. [36,38] and experimental works [37]. Table 2 gives a comparison between the present work and the literature.…”

Section: Optical Properties Of the Inas And Insb Bulkmentioning

confidence: 99%

Electronic and optical properties of InAs/InAs_0.625Sb_0.375 superlattices and their application for far-infrared detectors

Hussain

Cuono

Islam

et al. 2022

J. Phys. D: Appl. Phys.

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We calculate the electronic and optical properties of InAs/InAs0.625Sb0.375 superlattices within relativistic density functional theory. To have a good description of the electronic and optical properties, the modified Becke-Johnson exchange-correlation functional is employed to describe the band gaps correctly. First, we analyze the electronic and optical characteristics of bulk InAs and InSb, and then we investigate the InAs/InAs0.625Sb0.375 superlattice. The optical gaps deduced from the imaginary part of the dielectric function are associated with the characteristic interband transitions. We investigate the electronic and optical properties of the InAs/InAs0.625Sb0.375 superlattice with three lattice constants of the bulk InAs, GaSb and AlSb, respectively. It is observed that the electronic and optical properties strongly depend on the lattice constant. Our results support the presence of two heavy-hole bands with increasing in-plane effective mass as we go far from the Fermi level. We notice a considerable decrease in the energy gaps and the effective masses of the heavy-holes in the kx-ky plane compared to the bulk phases of the parent compounds. We demonstrate that the electrons are s-orbitals delocalized in the entire superlattice, while the holes have mainly p-Sb character localized in the In(As,Sb) side of the superlattice. In the superlattice, the low-frequency absorption spectra greatly increase when the electric field is polarized orthogonal to the growth axis allowing the applicability of III-V compounds for the long-wavelength infrared detectors.

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Section: Optical Properties Of the Inas And Insb Bulkmentioning

confidence: 99%

Electronic and optical properties of InAs/InAs_0.625Sb_0.375 superlattices and their application for far-infrared detectors

Hussain

Cuono

Islam

et al. 2022

J. Phys. D: Appl. Phys.

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“…The numerical simulation was carried out with the help of COMSOL Multiphysics, and the finite element approach was used to simulate the reflection properties of Si, GaN, InGaAs and InP based fixed gratings (Iqbal et al 2020 ; Ziane et al 2015 ; Zheng et al 2022 ; Arosa and Fuente 2020 ; Xiong et al 2021 ). The Finite Element Method (FEM) is a computational technique for approximating the solution of a series of constrained partial differential equations to the boundary conditions of the problem domain.…”

Section: Resultsmentioning

confidence: 99%

“…One common material used for the fabrication of optoelectronic device is Silicon (Rao et al 2010 ). After silicon, III–V semiconductor materials such as Indium Galium Arsenide (InGaAs) (Iqbal et al 2020 ), Gallium Nitride (GaN) (Ziane et al 2015 ) and Indium Phosphide (InP) (Zheng et al 2022 ) have been the fastest-growing, most widely-used and highest-output semiconductor materials for optoelectronic use (Zhou 2021 ; Amiri and Lazreg 2021 ). Compound semiconductor materials outperform conventional semiconductor materials in terms of (1) High electron mobility (2) Wide bandwidth (3) High frequency (4) High power (5) High linearity (6) Diversity of material selection (7) Anti radiation.…”

Section: Design and Theoretical Backgroundmentioning

confidence: 99%

InGaAs based gratings for UV–VIS spectrometer in prospective mRNA vaccine research

Ravindran

Nirmal

et al. 2022

Opt Quant Electron

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During the outbreak of the COVID-19 illness, mRNA (messenger RNA) injections proved to be effective vaccination. Among the presently available analytical techniques, UV/VIS spectrophotometry is a trustworthy and practical instrument that may provide information on the chemical components of the vaccine at the molecular level. In this paper, we will present a one-dimensional grating of InGaAs as a prospect grating structure for UV–VIS spectrometer that can be used for mRNA vaccine development. The main parameters and the wavelength region used in mRNA vaccine development lies in the range of 200 nm to 700 nm (UV–VIS Range). The incorporation of new materials that are excellent for cutting-edge semiconductor industry procedures for MEMS manufacture, as well as new optimal parameters, will improve the grating and spectrometer’s performance which will enhance the mRNA vaccine development and manufacturing workflows enabled by UV–VIS spectroscopy. Hence we evaluated the feasibility of the materials, Si (Silicon), GaN (Gallium Nitride), InGaAs (Indium Gallium Arsenide) and InP (Indium Phosphide) as a grating material. Reflection spectrum of the proposed structure shows 48% increase compared to the grating made up of Silicon. In order to model wave propagation in one grating unit cell, electromagnetic waves frequency domain interface is used. The periodic constraints of floquet periodicity are used for simulation at both faces of the unit cell. The reflectance of grating with each material as functions of the angle of incidence was plotted. Also we evaluated the effect of grating thickness, groove density, spectral resolution and efficiency over different materials namely Si, GaN, InGaAs and InP. After optimizing geometric parameters, the designed InGaAs based grating achieved a efficiency of 87.45% and can be a reliable prospect for mRNA based vaccine development.

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“…The reflection parameter decides the optical nature of a semiconductor in terms of the solar cell. It is found to react more sensitively towards the dielectric tensor's real and imaginary parts [26]. The equation for reflection is given as follows:…”

Section: B) Optical Property Analysismentioning

confidence: 99%

DFT Investigations of BeSnN₂ Chalcopyrite Compound for Optoelectronic Applications

Lathwal

Gaur

Khan

et al. 2022

IOP Conf. Ser.: Mater. Sci. Eng.

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The ternary chalcopyrite compounds are a very renowned category to perform the theoretical investigation in order to find out a proper and apt compound for optoelectronic application. Solar cell is a very interesting field to compensate the energy supplying needs in place of other electricity generating sources. Several semiconductor compounds have been investigated and amongst them we have done a theoretical investigation of pure BeSnN2 using DFT based computational tool i.e. Wien2k. The exchange correlation used for our study is Perdew Burke Ernzerhoff: Generalized Gradient Approximation (PBE-GGA). We have done electronic and optical investigation of the compound using the basic lattice parameters and other essential input parameters. The investigation has offered a bandgap of 1.005 eV which is suitable to quote for the optoelectronic applications. Optical properties like absorption, dielectric tensor (both real and imaginary), refraction and reflection have been investigated.

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First principles study of structural, electronic and optical properties of indium gallium nitride arsenide lattice matched to gallium arsenide

Cited by 35 publications

References 60 publications

Electronic and optical properties of InAs/InAs_0.625Sb_0.375 superlattices and their application for far-infrared detectors

Electronic and optical properties of InAs/InAs_0.625Sb_0.375 superlattices and their application for far-infrared detectors

InGaAs based gratings for UV–VIS spectrometer in prospective mRNA vaccine research

DFT Investigations of BeSnN₂ Chalcopyrite Compound for Optoelectronic Applications

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First principles study of structural, electronic and optical properties of indium gallium nitride arsenide lattice matched to gallium arsenide

Cited by 35 publications

References 60 publications

Electronic and optical properties of InAs/InAs0.625Sb0.375 superlattices and their application for far-infrared detectors

Electronic and optical properties of InAs/InAs0.625Sb0.375 superlattices and their application for far-infrared detectors

InGaAs based gratings for UV–VIS spectrometer in prospective mRNA vaccine research

DFT Investigations of BeSnN2 Chalcopyrite Compound for Optoelectronic Applications

Contact Info

Product

Resources

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Electronic and optical properties of InAs/InAs_0.625Sb_0.375 superlattices and their application for far-infrared detectors

Electronic and optical properties of InAs/InAs_0.625Sb_0.375 superlattices and their application for far-infrared detectors

DFT Investigations of BeSnN₂ Chalcopyrite Compound for Optoelectronic Applications