1998
DOI: 10.1016/s0927-0256(97)00144-4
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First-principles investigations of the electronic, optical and chemical bonding properties of SnO2

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Cited by 33 publications
(7 citation statements)
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“…This is consistent with the picture of a monotonically decreasing band gap as the films transition from pure SnO 2 to pure ZnO. Band gaps of 3.7–3.4 eV are attributed to rutile SnO 2 , while band gaps of 3.2–3.43 eV are attributed to wurtzite ZnO. , Perkins et al show that the optical band gap of sputtered Zn 2 SnO 4 is wider than that of ZnO …”
Section: Discussionsupporting
confidence: 78%
“…This is consistent with the picture of a monotonically decreasing band gap as the films transition from pure SnO 2 to pure ZnO. Band gaps of 3.7–3.4 eV are attributed to rutile SnO 2 , while band gaps of 3.2–3.43 eV are attributed to wurtzite ZnO. , Perkins et al show that the optical band gap of sputtered Zn 2 SnO 4 is wider than that of ZnO …”
Section: Discussionsupporting
confidence: 78%
“…A similar pattern has been observed in all the stable polymorphs of SnO 2 . The calculated bonding nature of rutile SnO 2 in comparison to the reported values , also is in good agreement with the PDOS analysis.…”
Section: Resultsmentioning
confidence: 99%
“…Tin oxide (SnO 2 ) is one of the most important materials from the group of transparent conducting oxides and received a great deal of interest for many years due to several fields of application such as solar cells, optoelectronic devices, touch screen, oxidation catalysts, light emitting diodes etc. . Under ambient conditions, SnO 2 crystallizes in a rutile‐type structure with P4 2 /mnm (D4h14) symmetry with six atoms per unit cell and therefore is isostructural to many other AO 2 compounds including stishovite (rutile‐type structure) which is the high‐pressure polymorph of silica .…”
Section: Introductionmentioning
confidence: 99%