2015
DOI: 10.1016/j.apsusc.2015.07.189
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First-principles calculations of the twin boundary energies and adhesion energies of interfaces for cubic face-centered transition-metal nitrides and carbides

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Cited by 29 publications
(7 citation statements)
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“…Generally, the model with larger W ad and smaller interfacial distance will be more stable. This phenomenon has been discussed in previous interface research such as Fe/WC, 49 TiN/VN, 50 TiN/AlN, 51 and ZrN/TiN 52 . Therefore, TL site with smaller equilibrium interfacial distance is the most stable interface geometry and may be preferred atomic stacking sequence during lattice growth.…”
Section: Interfaces Properties Of Crn(200)/ni(111)mentioning
confidence: 61%
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“…Generally, the model with larger W ad and smaller interfacial distance will be more stable. This phenomenon has been discussed in previous interface research such as Fe/WC, 49 TiN/VN, 50 TiN/AlN, 51 and ZrN/TiN 52 . Therefore, TL site with smaller equilibrium interfacial distance is the most stable interface geometry and may be preferred atomic stacking sequence during lattice growth.…”
Section: Interfaces Properties Of Crn(200)/ni(111)mentioning
confidence: 61%
“…This phenomenon has been discussed in previous interface research such as Fe/ WC, 49 TiN/VN, 50 TiN/AlN, 51 and ZrN/TiN. 52 Therefore, TL site with smaller equilibrium interfacial distance is the most stable interface geometry and may be preferred atomic stacking sequence during lattice growth. The electronic properties and bonding nature near the interface of TL site with 1.9-Å interfacial distance will be investigated and discussed.…”
Section: Adhesion Energymentioning
confidence: 66%
“…The PbSe(200)/Si(100) and PbSe(220)/Si(100) interface structures were constructed as shown in Figure , which contain five layers of Pb, Se atoms and nine layers of Si atoms. For the sputtered PbSe polycrystalline thin films, the interface energy ( E interface hkl ) between PbSe(200), PbSe(220), and Si(100) substrate can be calculated as , where E surface PbSe hkl and E surface Si 100 denote the surface energy of the PbSe­(hkl) slab and Si(100) slab, respectively; W PbSe / Si hkl/100 is the adhesion work of the PbSe­(hkl) and Si(100) interface, which can be calculated as W PbSe / Si hkl/100 = ( E slab PbSe hkl + E slab Si 100 – E PbSe / Si hkl/100 )/ A PbSe / Si hkl/100 ; here, E slab PbSe hkl and E slab Si 100 represent the total energy of the PbSe­(hkl) slab and Si(100) slab, respectively, while E PbSe / Si hkl/100 denotes the total energy of the PbSe­(hkl)/Si(100) interface system and A PbSe / Si hkl/100 is the interface area. As seen from Table , the interface energy of the PbSe(200)/Si(100) interface structure (4.017 J·m –2 ) is much lower than the PbSe(220)/Si(100) interface structure (12.918 J·m –2 ), indicating that PbSe(200) is the preferred growth plane when the interface energy minimization dominates the total free energy variation, i.e., Δ E interface > Δ E surface and Δ E strain .…”
Section: Results and Discussionmentioning
confidence: 99%
“…In addition to TiN coatings, other two-component nitride coatings are also used for corrosion protection, such as CrN [35,[38][39][40][41][42][43][44][45][46][47][48], ZrN [49][50][51], and MoN [52,53].…”
Section: Introductionmentioning
confidence: 99%