2022
DOI: 10.1021/acs.jpcc.1c10486
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First-Principles Analysis of the Oxide-Ion Conduction Mechanism in Si-Deficient Lanthanum Silicate Apatite

Abstract: Si-deficient lanthanum silicate apatites (La9.33+0.67x Si6–0.5x O26, LSOs) have attracted attention for their high oxide-ion conductivities. However, the carrier species and the conduction pathways responsible for the oxide-ion conduction are still unclear. In this study, the conduction mechanism of oxide ions in Si-deficient LSO was studied by first-principles calculations. It was found that Si-deficient LSO can include a small amount of excess oxide ions, which are located at the interstitial site along the … Show more

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Cited by 5 publications
(6 citation statements)
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“…Due to their high conductivities and the flexibility of the apatite structure, apatite-type oxide-ion conductors have garnered considerable interest. [65][66][67][68] Lanthanum silicates and germanates are the most extensively studied apatite-type oxide-ion conductors, with high conductivities of B3 Â 10 À3 S cm À1 at 700 1C for La 9.33 (SiO 4 ) 6 O 2 and B0.14 S cm À1 at 950 1C for La 9 Sr-Ge 6 O 26.5 . 65,68,69 The majority of apatite-type oxide-ion conductors have hexagonal symmetry, and their structures are composed of isolated SiO 4 or GeO 4 tetrahedra and lanthanide cations located at 9-and 7-fold coordinated sites.…”
Section: Apatite-type Oxide-ion Conductorsmentioning
confidence: 99%
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“…Due to their high conductivities and the flexibility of the apatite structure, apatite-type oxide-ion conductors have garnered considerable interest. [65][66][67][68] Lanthanum silicates and germanates are the most extensively studied apatite-type oxide-ion conductors, with high conductivities of B3 Â 10 À3 S cm À1 at 700 1C for La 9.33 (SiO 4 ) 6 O 2 and B0.14 S cm À1 at 950 1C for La 9 Sr-Ge 6 O 26.5 . 65,68,69 The majority of apatite-type oxide-ion conductors have hexagonal symmetry, and their structures are composed of isolated SiO 4 or GeO 4 tetrahedra and lanthanide cations located at 9-and 7-fold coordinated sites.…”
Section: Apatite-type Oxide-ion Conductorsmentioning
confidence: 99%
“…[65][66][67][68] Lanthanum silicates and germanates are the most extensively studied apatite-type oxide-ion conductors, with high conductivities of B3 Â 10 À3 S cm À1 at 700 1C for La 9.33 (SiO 4 ) 6 O 2 and B0.14 S cm À1 at 950 1C for La 9 Sr-Ge 6 O 26.5 . 65,68,69 The majority of apatite-type oxide-ion conductors have hexagonal symmetry, and their structures are composed of isolated SiO 4 or GeO 4 tetrahedra and lanthanide cations located at 9-and 7-fold coordinated sites. Using hightemperature neutron diffraction and MEM, Yashima et al discovered two migration pathways in the apatite-type oxideion conductor La 9.69 (Si 5.70 Mg 0.30 )O 26.24 .…”
Section: Apatite-type Oxide-ion Conductorsmentioning
confidence: 99%
“…La 3+ 10−α (SiO 4 ) 4− 6 O 2− 2+δ (LSO) is one of the most interesting materials [15,16]. In polycrystalline samples, grain alignment and doping are the two common methods to get the desired properties in the sample, the same has been employed by various research groups in the last few years [2,7,8,[10][11][12][13][16][17][18][19][20][21]. Various doping such as Al, Mg at B-site and alkaline earth and rare Earth substitutions at A-site have been done in order to get conductivities in the range of 1 S cm −1 but unfortunately, conductivity is achieved in the range of 10-50 mS cm −1 [7-11, 13, 14, 16, 19, 20, 22].…”
Section: Introductionmentioning
confidence: 99%
“…Various doping such as Al, Mg at B-site and alkaline earth and rare Earth substitutions at A-site have been done in order to get conductivities in the range of 1 S cm −1 but unfortunately, conductivity is achieved in the range of 10-50 mS cm −1 [7-11, 13, 14, 16, 19, 20, 22]. To explain this the two kind of conduction mechanism, namely, push-pull [17] and interstitial [9,18] are well described for the oxyapatites. In the push-pull conduction mechanism, interstitial oxygen cooperatively migrates with O4 to the most stable interstitial O site with the lowest potential barrier of 0.01 eV with site energies in the range of 0-0.25 eV.…”
Section: Introductionmentioning
confidence: 99%
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