“…Accordingly, Tl-containing III–V compound semiconductors are attractive materials for optoelectronic devices operating at infrared region. For instance, TlGaAs could be used to fabricate higher-quality and more efficient devices (e.g., laser diodes, solar cells) ( Nishimoto et al, 2003 , Zayan and Vandervelde, 2019 , Nikoo et al, 2022 ). TlBr with cesium chloride structure has high density (7.56 g/cm 3 ) and a comparatively wide band gap energy (2.68 eV) ( Dönmez et al, 2010 ).…”