First photopumped yellow–green lasing operation of BeZnSeTe/(MgSe/BeZnTe) doublehetero structures (DHs) grown on InP substrates

Ebisawa, Tomoya; Nomura, Ichirou; Kishino, Katsumi; Tasai, Kunihiko; Nakamura, Hitoshi; Asatsuma, Tsunenori; Nakajima, Hiroshi

doi:10.1016/j.jcrysgro.2009.01.123

Cited by 9 publications

(5 citation statements)

References 6 publications

(7 reference statements)

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“…This semiconducting property of DMS materials makes them applicable in various advanced technologies i.e., optoelectronics, opto-spintronics, and thermoelectrics [1,2]. Doping of these materials exhibit not only semiconductor behavior but also the stability in ferromagnetic (FM) nature and half metallic FM nature which have unique multifunctional properties [12][13][14][15][16]. The doping of Mn-ions acts as a localized spins also luminous centers in semiconductors (SCs) [17].…”

Section: Introductionmentioning

confidence: 99%

Exploring the Mn doped BaTe alloy for spintronics and energy harvesting applications

Saleem,

Yaseen,

Aldaghfag

et al. 2024

Phys. Scr.

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In the present study, the ferromagnetic semiconductor behavior of Mn doped BaTe is reported along with their physical properties. The calculations are done by full potential linearized augmented plane wave (FP-LAPW) approach within spin-polarized density functional theory (SP-DFT). Formation energies were computed to satisfy the stability of reported alloys. The spin-polarization is included in the calculations to study the electronic (band structure (BS), density of states (DOS)) and magnetic characteristics. Ba1-xMnxTe elucidates the magnetic semiconductor nature with direct band gap (Eg) in both spin channels while indirect Eg (1.66 eV) is observed for pure BaTe compound. Stable ferromagnetic (FM) states are vindicated owing to the p-d hybridization which are contributors in inducing magnetic moments (μB) at interstitial and non-magnetic sites. The optical parameters (reflectivity, absorption coefficient, refraction, optical conductivity and dielectric function) were computed within an energy range of 0-10 eV. Thermoelectric (TE) features are also figured using Boltaz-Trap code in terms of thermal and electrical conductivity, figure of merit, Seebeck coefficient and power factor. The analysis of optical parameters suggests that the considered alloys is active within visible to UV-range, having potential applications in optoelectronic, photovoltaic and thermoelectric applications.

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Section: Introductionmentioning

confidence: 99%

Exploring the Mn doped BaTe alloy for spintronics and energy harvesting applications

Saleem,

Yaseen,

Aldaghfag

et al. 2024

Phys. Scr.

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“…In this respect, beryllium chalcogenides BeX (X= Se, S, Te) have garnered intense attention of scientific community due to their technological applications in optoelectronics, spintronics and micro-electronics [19][20][21][22][23] devices. At ambient pressure and temperature, BeX are transformed from zinc blende to NiAs structure [24,25].…”

Section: Introductionmentioning

confidence: 99%

Exploring of Be1-xCrxSe alloys for spintronics and optoelectronic applications

Ambreen,

Saleem,

Aldaghfag

et al. 2024

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In this study, spin polarized density functional theory (DFT) is implemented to predict physical characteristic of Be1-xCrxSe (x = 6.25%, 12.5%, 18.75%, 25%) compound. The electronic characteristics of pure BeSe compound show semiconductor behavior but after Cr doping BeSe elucidate half-metallic ferromagnetism (HMF) for all doping concentrations. The outcomes elucidate the total magnetic moment MTot per Cr-atom are 4.0028, 4.0027, 4.0021 and 4.0002 μB for 6.25%, 12.5%, 18.75%, 25% concentrations, respectively and the magnetism mainly originated from d-state of the impurity atom which is further ensured from the magnetic spin density. Furthermore, the optical parameters are also computed to determine the effect of doping on the material’s response to incident light of energy spanning from 0 to 10 eV. The optical study depict that the studied systems possess maximum absorbance and optical conductivity in UV-range with minimal reflection. The overall outcomes illustrate that the Cr doped beryllium selenide (BeSe) is promising material for spintronic and optoelectronic devices.

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“…II-VI compound semiconductors such as ZnCdSe, BeZnTe, and BeZnSeTe on InP substrates are very attractive for use in visible-toinfrared optical devices [1][2][3][4][5][6][7][8][9]. Using these materials, we are developing green and yellow laser diodes (LDs) and light-emitting diodes (LEDs) [3][4][5][6][7][8][9].…”

Section: Introductionmentioning

confidence: 99%

“…Using these materials, we are developing green and yellow laser diodes (LDs) and light-emitting diodes (LEDs) [3][4][5][6][7][8][9]. In the developments, lowering the contact resistance between (especially p-side) contact layers and electrodes is a crucial issue in obtaining high device performances.…”

Section: Introductionmentioning

confidence: 99%

Investigation of p-side contact layers for II–VI compound semiconductor optical devices fabricated on InP substrates by MBE

Takamatsu

Nomura

Shiraishi

et al. 2015

Journal of Crystal Growth

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First photopumped yellow–green lasing operation of BeZnSeTe/(MgSe/BeZnTe) doublehetero structures (DHs) grown on InP substrates

Cited by 9 publications

References 6 publications

Exploring the Mn doped BaTe alloy for spintronics and energy harvesting applications

Exploring the Mn doped BaTe alloy for spintronics and energy harvesting applications

Exploring of Be1-xCrxSe alloys for spintronics and optoelectronic applications

Investigation of p-side contact layers for II–VI compound semiconductor optical devices fabricated on InP substrates by MBE

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