First-order Raman scattering in homoepitaxial chemical vapor deposited diamond at elevated temperatures

Raman spectroscopy was applied to monitor the growth of diamond in different plasma-assisted chemical vapour deposition reactors. A gated, multichannel detection system was used to discriminate against the high level of background radiation produced by the plasma and the hot substrate. As a result, Raman spectra could be taken during diamond growth without interruption of the process. The ability to detect and distinguish between diamond and non-diamond phases during film growth is demonstrated. A sufficient signal-to-noise ratio in the spectra was achieved for stress formation to be observed.

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“…For this purpose, we used the data of Herchen and co-workers. 16,17 These values are plotted in Fig. 4 along with our own results.…”

Section: Temperature Calibrationmentioning

confidence: 97%

“…There was fair agreement between the data. In the following, we will use the simple functional form proposed by Herchen and co-workers 16,17 which describes the variation of the diamond phonon wavenumber versus temperature:…”

Section: Temperature Calibrationmentioning

confidence: 99%

In situ Raman monitoring of the growth of CVD diamond films

Mermoux

Marcus

Abello

et al. 2003

J Raman Spectroscopy

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“…However, they are intrinsically incompatible with nanosecond timescales, whereas PDA devices were. Devices based on photomultipliers and gated electronics were also used for detection [44,[64][65][66][67][68][69][70]. Some attempts were also made through positioning, between sample and spectrometer, some rapid optical door, based for instance on a Pockels device [56].…”

Section: Specific Instrumentationmentioning

confidence: 99%

Optical Spectroscopy Methods and High‐Pressure–High‐Temperature Studies

Polian

Simon

Pagès³

2010

Thermodynamic Properties of Solids

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This chapter aims to show how optical spectroscopies contribute to the study of vibrational properties under extreme conditions. Now, what do we mean by extreme conditions? We can take it in the other way and mention that ambient conditions have nothing more special as to permit life on earth -that is already not bad! From the point of view of physics, no particular property occurs at ambient conditions. On the contrary, most of the matter in the universe is under extreme pressure (P) and temperature (T), as it is in planets, stars, and more exotic objects. Studies at high pressure and high temperature are hence only the study of matter in its normal conditions. The reason why geoscientists are much interested in such studies is self-explanatory, but other fields are widely studied. The application of high pressure and high temperature enables to explore the repulsive part of the potential energy (fundamental physics), to provoke phase transformations thereby leading to new structures eventually metastable at ambient conditions (materials sciences), to orient chemical reactions in requested directions (chemistry), and even to crystallize proteins, that otherwise would not happen by using other techniques (biology). Another interest to work under variable conditions is that, obviously, more insight is given into the considered phenomenon, in that the pressure and/or temperature derivatives of the phenomenon become available, thus offering a more complete picture to achieve optimum understanding and/or modeling.There are mainly five experimental methods to probe the vibrational properties of matter: optical spectroscopies (of main interest here), ultrasonics (US), inelastic neutron scattering (INS, cf. Chapter 3), more recently inelastic X-ray scattering (IXS, cf. Chapter 4) -that was made possible due to the introduction of third generation synchrotron radiation facilities -and picosecond (PS) acoustics.INS and IXS are used to determine the dispersion of vibration modes, that is, acoustical as well as optical ones, over the whole Brillouin zone (BZ). The most stringent limitations are the needed sources (national-size ones, i.e., a nuclear reactor for INS and a monochromatized X-ray beam as delivered by a synchrotron for IXS), and a limitation to small momentum transfer (q < 0.1q BZB , where q is the magnitude of the wavevector and BZB is the BZ boundary). An additional limitation for INS is

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“…The different levels of the frequency dependence of the device capacitance are from the different levels of contributions by the resistive property and the capacitive property in the metal-diamond interface and bulk diamond. 39 Generally, the frequency dependence of the C -V characteristics of the CVD diamond device can be related to the two physical properties of the materials: deep-trap centers and the series resistance of the bulk itself.…”

Section: B Capacitance-voltage Characteristicsmentioning

confidence: 99%

Conceptual development and characterization of a diamond-based ultraviolet detector

Jiang

Ahn

Chuen

et al. 1999

Review of Scientific Instruments

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Articles you may be interested inUltraviolet GaN photodetectors on Si via oxide buffer heterostructures with integrated short period oxide-based distributed Bragg reflectors and leakage suppressing metal-oxide-semiconductor contacts J. Appl. Phys. 116, 083108 (2014); 10.1063/1.4894251 Comparative study of ultraviolet detectors based on ZnO nanostructures grown on different substrates J. Appl. Phys. 112, 074510 (2012); 10.1063/1.4757619 Effect of asymmetric Schottky barrier on GaN-based metal-semiconductor-metal ultraviolet detector Appl. Phys. Lett. 99, 261102 (2011); 10.1063/1.3672030High-performance metal-semiconductor-metal deep-ultraviolet photodetectors based on homoepitaxial diamond thin film Submicron metal-semiconductor-metal ultraviolet detectors based on AlGaN grown on silicon: Results and simulation A metal-semiconductor-metal ͑MSM͒ structure ultraviolet ͑UV͒ photodetector has been designed and fabricated on chemical vapor deposition grown diamond and its performance has been characterized. A concept was envisioned of creating a new process by which 1 m small gap spacing was achieved. This kind of detector can be operated at a lower bias voltage with a higher photoresponsivity in the UV range. The success of this device depended on the bilayer metal electrodes, good Ohmic contact, image reversal technique, direct writing process, and sacrificial layer technology. Current-voltage and capacitance-voltage characteristics, photoresponsivity, and quantum efficiency of planar MSM structures with Au/Ti-diamond contacts are presented.

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First-order Raman scattering in homoepitaxial chemical vapor deposited diamond at elevated temperatures

Cited by 33 publications

References 22 publications

In situ Raman monitoring of the growth of CVD diamond films

In situ Raman monitoring of the growth of CVD diamond films

Optical Spectroscopy Methods and High‐Pressure–High‐Temperature Studies

Conceptual development and characterization of a diamond-based ultraviolet detector

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