First-order gain-coupled (Ga,In)As/(Al,Ga)As distributed feedback lasers by focused ion beam implantation and in situ overgrowth

Abstract

First-order gain-coupled distributed feedback lasers have been fabricated in the ͑Ga,In͒As/͑Al,Ga͒As material system by maskless patterning with focused ion beam implantation. The laser devices are operating at 77 K and room temperature at emission wavelengths between 1.0 and 0.7 m. The structures obtained are thermally stable up to annealing temperatures of 800°C. A full in situ processing of gain-coupled distributed feedback laser structures was for the first time successfully demonstrated. This process includes molecular beam epitaxy, grating patterning by focused ion beam, and epitaxial overgrowth. All processed lasers show single mode emission at all operating conditions as expected for gain-coupled lasers.

Focused ion beam implantation for opto- and microelectronic devices

“…In combination with molecular beam epitaxy ͑MBE͒ ultrahigh vacuum ͑UHV͒-type focused ion beam ͑FIB͒ systems may be used for in situ patterning processes. 5 Two main effects can be used in a focused ion beam process to modify the material properties for device applications as it is illustrated in Fig. 1.…”

Fabrication of Quasi-Sinusoidal Surface Relief Optical Transmission Gratings in Pyrex and IOG Glasses by Implantation with Oxygen and Nitrogen Ion Microbeams of the 5–6 MeV Energy Range

“…The phase mask was produced by FIB implanting a grating pattern into a fused silica sample using a 200 keV Si 2+ beam of 100 nm diameter and subsequently wet etching the sample in a HF solution . Orth et al reported on FIB fabrication of GaInAs/GaAs distributed feedback lasers in a series of articles. − Yu et al used FIB implantation with germanium ions to fabricate channel waveguides, grating couplers, Mach–Zehnder interferometers, ring resonators, and directional couplers in silicon …”

“… 20 Orth et al reported on FIB fabrication of GaInAs/GaAs distributed feedback lasers in a series of articles. 21 − 23 Yu et al used FIB implantation with germanium ions to fabricate channel waveguides, grating couplers, Mach–Zehnder interferometers, ring resonators, and directional couplers in silicon. 24 …”