Nanofabrication by FIB

Gamo, Kenji

doi:10.1016/0167-9317(96)00003-2

Cited by 59 publications

(34 citation statements)

References 32 publications

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“…Focused ion beam lithography is analogous to e-beam lithography [38,39], but here magnetic lenses are replaced by electrostatic lenses because of the much heavier ion masses. The ion source is typically made of a sharp W-tip coated with liquid metal, Ga for example.…”

Section: Focused Ion Beam Lithographymentioning

confidence: 99%

Nanofabrication: Conventional and nonconventional methods

2001

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Nanofabrication is playing an ever increasing role in science and technology on the nanometer scale and will soon allow us to build systems of the same complexity as found in nature. Conventional methods that emerged from microelectronics are now used for the fabrication of structures for integrated circuits, microelectro-mechanical systems, microoptics and microanalytical devices. Nonconventional or alternative approaches have changed the way we pattern very fine structures and have brought about a new appreciation of simple and low-cost techniques. We present an overview of some of these methods, paying particular attention to those which enable large-scale production of lithographic patterns. We preface the review with a brief primer on lithography and pattern transfer concepts. After reviewing the various patterning techniques, we discuss some recent application issues in the fields of microelectronics, optoelectronics, magnetism as well as in biology and biochemistry.

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Section: Focused Ion Beam Lithographymentioning

confidence: 99%

Nanofabrication: Conventional and nonconventional methods

2001

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“…These mass-selecting FIB (MSFIB) columns make ion beam generation of much of the elements in the periodic table possible. The above capabilities, together with an attainable spatial resolution of order ten nm make FIB systems attractive for a number of applications such as nano-fabrication [1,2], guided assembly of semiconductor nanostructures [3,4] and potential nano-scale doping [5,6]. We are particularly interested in the last two applications.…”

Section: Introductionmentioning

confidence: 99%

Damage recovery of FIB modified Si for directed-assembly of semiconductor nanostructures

Balasubramanian

Hull

2015

J Mater Sci: Mater Electron

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Focused ion beam (FIB) techniques have previously been shown to have applications in templating semiconductor nanostructure growth on Si. To assess crystalline quality in this method, or in other FIB-based nano-fabrication methods in Si, we assess in this work FIBimplantation damage in Si and subsequent recovery by annealing. Specifically, we study Si substrates implanted to 1 9 10 12 -5 9 10 15 ions cm -2 fluences of 30 kV Si 2? , Ge 2? and Ga ? incident normally at room temperature, covering a structural damage regime from almost no damage to amorphization. Raman spectroscopy with incident photons of wavelength 405 and 514 nm were used for probing structural damage in different depths in as-implanted and thermally annealed substrates. Annealing was performed for varying times at 730-900°C in ultra-high purity nitrogen ambient. Structural damage quantification was performed through measurements of peak height and position of the crystalline Si peak at 520 cm -1 . Our analysis shows that a structural damage parameter, D, (defined by subtracting from unity, the ratio of the height of the Si Raman peak in implanted/annealed samples to that for the Si peak in an unimplanted standard, such that D = 0.00 and D = 1.00 correspond to pristine single crystal and amorphous Si respectively) is 0.05 or less in all the Si and Ge implants after annealing to 900°C, 1800 s. However, D for the Ga implants is close to zero for Ga fluences up to 3 9 10 13 cm -2 but increases steadily to 0.19 for 5 9 10 15 Ga cm -2 under these annealing conditions. The underlying damage recovery mechanisms are discussed.

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“…Obviously the key technology for fabricating nanoscale devices is a lithography with a resolution in the regime of the order of a few 10 nm. Aside from established nanolithography tools such as electron beam [2], X-ray [3], or focussed ion beam [4], alternative methods based on the scanning probe microscopy have been developed [5]. These methods, though only capable of research laboratory use, further extend the resolution limit towards the atomic scale.…”

Section: Introductionmentioning

confidence: 98%

Invited Review Nanoscale devices fabricated by dynamic ploughing with an atomic force microscope

Kunze

2002

Superlattices and Microstructures

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Nanofabrication by FIB

Cited by 59 publications

References 32 publications

Nanofabrication: Conventional and nonconventional methods

Nanofabrication: Conventional and nonconventional methods

Damage recovery of FIB modified Si for directed-assembly of semiconductor nanostructures

Invited Review Nanoscale devices fabricated by dynamic ploughing with an atomic force microscope

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