First lithographic results from the extreme ultraviolet Engineering Test Stand

Chapman, Henry N.; Ray-Chaudhuri, Avijit K.; Tichenor, Daniel A.; Replogle, William C.; Stulen, R. H.; Kubiak, Glenn D.; Rockett, Paul D.; Klebanoff, Leonard E.; O’Connell, Donna J.; Leung, Alvin H.; Jefferson, Karen L.; Wronosky, John B.; Taylor, John S.; Hale, Layton C.; Blaedel, Kenneth L.; Spiller, Eberhard; Sommargren, Gary E.; Folta, James A.; Sweeney, Donald W.; Gullikson, Eric M.; Naulleau, Patrick; Goldberg, Kenneth A.; Bokor, Jeffrey; Attwood, David; Mickan, Uwe; Hanzen, Ralph M.; Panning, Eric M.; Yan, P.-Y.; Gwyn, C. W.; Lee, S. H.

doi:10.1116/1.1414017

Cited by 35 publications

(18 citation statements)

References 5 publications

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“…As of 2003, standard memory devices are made using UV lithography at a wavelength of 193 nm and with a 90-nm linewidth on 300-mm wafers [25]. Soft X-ray or extreme-UV (EUV) lithography [26,27] is being developed by several consortia all over the globe to push the resolution to smaller length scales. The present goal is to make features on a 45-nm scale using light with 13.4-nm wavelength.…”

Section: Fabricationmentioning

confidence: 99%

Micro- and nanofluidics for DNA analysis

Tegenfeldt

Prinz

Cao

et al. 2004

Analytical and Bioanalytical Chemistry

294

226

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Miniaturization to the micrometer and nanometer scale opens up the possibility to probe biology on a length scale where fundamental biological processes take place, such as the epigenetic and genetic control of single cells. To study single cells the necessary devices need to be integrated on a single chip; and, to access the relevant length scales, the devices need to be designed with feature sizes of a few nanometers up to several micrometers. We will give a few examples from the literature and from our own research in the field of miniaturized chip-based devices for DNA analysis, including dielectrophoresis for purification of DNA, artificial gel structures for rapid DNA separation, and nanofluidic channels for direct visualization of single DNA molecules.

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Section: Fabricationmentioning

confidence: 99%

Micro- and nanofluidics for DNA analysis

Tegenfeldt

Prinz

Cao

et al. 2004

Analytical and Bioanalytical Chemistry

294

226

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“…The multilayer materials and thicknesses were optimized for near-normal-incidence reflection of 13.2 nm light, as required for EUV lithography [26], and these thick multilayers exhibit high reflectance in this wavelength region. The reflectivity is shown in Fig.…”

Section: Fabrication Of Sliced Multilayers a Low-stress Thick Multilmentioning

confidence: 99%

High-efficiency x-ray gratings with asymmetric-cut multilayers

Bajt¹,

Chapman

Aquila³

et al. 2012

J. Opt. Soc. Am. A

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We present the fabrication and analysis of efficient and highly dispersive gratings for the x-ray and extreme ultraviolet (EUV) regime. We show that an asymmetric-cut multilayer structure can act as a near-perfect blazed grating. The precision and high line density are achieved by layer deposition of materials, which can be controlled to the angstrom level. We demonstrate this in the EUV regime with two structures made by cutting and polishing magnetron-sputtered multilayer mirrors of over 2000 bilayers thick, each with a period of 6.88 nm. These were cut at angles of 2.9°and 7.8°to the surface. Within the 3% bandwidth rocking curve of the multilayer, the angular dispersion of the diffracted wave was in agreement with the grating equation for elements with 7250 and 19,700 line pairs/mm, respectively. The dependence of the measured efficiency was in excellent agreement with a formulation of dynamical diffraction theory for multilayered structures. At a wavelength of 13.2 nm, the efficiency of the first-order diffraction was over 95% of the reflectivity of the uncut multilayer. We predict that such structures should also be effective at shorter x-ray wavelengths. Both the Laue (transmitting) and Bragg (reflecting) geometries are incorporated in our formalism, which is applied to the analysis of multilayer Laue lenses and focusing and dispersing Bragg optics.

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“…Later, this light was supplied by deep ultraviolet 248 nm KrF and 193 nm ArF excimer lasers. Currently, lithography for 45-nm-technology nodes uses 193 nm light to From late 1990s until 2001, the Extreme Ultraviolet Limited Liability Company developed the first EUV full-field exposure tool, engineering test stand (ETS), to demonstrate the feasibility and capability of the method [8][9][10][11][12]. ETS is a vacuum-compatible step-and-scan system that has 4-mirrors, 4×-reduction, a ring-field design, a numerical aperture of 0.1, and print resolution of 70-100 nm.…”

Section: Introductionmentioning

confidence: 99%

Next-generation lithography for 22 and 16 nm technology nodes and beyond

2011

Sci. China Inf. Sci.

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In this paper, next-generation lithography (NGL) for the 22 and 16 nm technology nodes and beyond is reviewed. A broad range of topics, including history, technologies, critical challenges, and the most plausible candidates are discussed. The 22 and 16 nm technology nodes rely on NGL. NGLs have been extensively studied. Because of technological issues, the semiconductor industry has stopped pursuing several NGLs, such as X-ray proximity lithography, ion projection lithography, and scattering with angular limitation projection electron lithography. Currently, the primary candidate technologies are extreme ultraviolet lithography (EUVL), maskless lithography (ML2), and nanoimprint lithography (NIL), with EUVL being the leading candidate. Since EUVL was first proposed in 1988, many studies have been conducted. Currently, there is no "show stopper" for EUVL. Moreover, challenges are present in almost all aspects of EUVL technology. Almost all primary semiconductor manufacturing companies plan to implement commercial pre-production step-and-scan exposure tools in 2011. However, EUVL power at an intermediate focusing level has not yet met the volume manufacturing requirements. EUVL resists have been significantly improved recently, but there is still a critical need to meet requirements on resolution, line width roughness, and sensitivity. Creating a defect-free EUVL mask is another obstacle to the application of EUVL. ML2 and NIL, like EUVL, have also undergone significant progress recently, but throughput, defect control, and cost remain the critical impediments for practical application.

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First lithographic results from the extreme ultraviolet Engineering Test Stand

Cited by 35 publications

References 5 publications

Micro- and nanofluidics for DNA analysis

Micro- and nanofluidics for DNA analysis

High-efficiency x-ray gratings with asymmetric-cut multilayers

Next-generation lithography for 22 and 16 nm technology nodes and beyond

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