First Fiber‐Shaped Non‐Volatile Memory Device Based on Hybrid Organic–Inorganic Perovskite

Yan, Kai; Chen, Buxin; Hu, Hongli; Chen, Si; Dong, Binbin; Gao, Xue; Xiao, Xinyu; Zhou, Jingbo; Zou, Dechun

doi:10.1002/aelm.201600160

Cited by 63 publications

(51 citation statements)

References 37 publications

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“…[3][4][5][6] This behavior has been exploited to develop memory devices [7][8][9][10][11][12][13] and synaptic devices. [1,2] OHP film shows hysteresis in current-voltage responses due to defect migration in the perovskite layer in response to an electric field.…”

Section: Metal Halide Perovskitesmentioning

confidence: 99%

“…[1,2] OHP film shows hysteresis in current-voltage responses due to defect migration in the perovskite layer in response to an electric field. [14][15][16] Memory devices that use OHPs show good performance, and have their advantages such as flexibility, [10,13] high ON/OFF ratio, multilevel property, [11] and analog switching that may be applicable to neuromorphic computing devices. [14][15][16] Memory devices that use OHPs show good performance, and have their advantages such as flexibility, [10,13] high ON/OFF ratio, multilevel property, [11] and analog switching that may be applicable to neuromorphic computing devices.…”

Section: Metal Halide Perovskitesmentioning

confidence: 99%

“…[36,37] To overcome these problems, sequential vapor deposition was introduced; it deposits one material at a time so the evaporation rates of the organic and inorganic sources can be controlled individually. [3][4][5][6] This behavior has been exploited to develop memory devices [7][8][9][10][11][12][13] and synaptic devices. This fabrication method may be able to achieve large-scale logic circuits on silicon wafer and to obtain highquality films without pin holes.…”

mentioning

confidence: 99%

“…[37,38] In this study, we used vapor deposition which is compatible with conventional methods for silicon-wafer-based and thin-film solar cells; specifically, we used sequential vapor deposition to deposit uniform resistive switching layers into nanotemplates, and this method can be extended to CMOS-compatible processes owing to the possibility of depositing uniform thin films on large areas. [14][15][16] Memory devices that use OHPs show good performance, and have their advantages such as flexibility, [10,13] high ON/OFF ratio, multilevel property, [11] and analog switching that may be applicable to neuromorphic computing devices. The CH 3 NH 3 PbI 3 -based nanoscale memory device shows low-voltage operation, good endurance, and long data retention.…”

mentioning

confidence: 99%

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A Strategy to Design High‐Density Nanoscale Devices utilizing Vapor Deposition of Metal Halide Perovskite Materials

2017

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The demand for high memory density has increased due to increasing needs of information storage, such as big data processing and the Internet of Things. Organic-inorganic perovskite materials that show nonvolatile resistive switching memory properties have potential applications as the resistive switching layer for next-generation memory devices, but, for practical applications, these materials should be utilized in high-density data-storage devices. Here, nanoscale memory devices are fabricated by sequential vapor deposition of organolead halide perovskite (OHP) CH NH PbI layers on wafers perforated with 250 nm via-holes. These devices have bipolar resistive switching properties, and show low-voltage operation, fast switching speed (200 ns), good endurance, and data-retention time >10 s. Moreover, the use of sequential vapor deposition is extended to deposit CH NH PbI as the memory element in a cross-point array structure. This method to fabricate high-density memory devices could be used for memory cells that occupy large areas, and to overcome the scaling limit of existing methods; it also presents a way to use OHPs to increase memory storage capacity.

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Section: Metal Halide Perovskitesmentioning

confidence: 99%

Section: Metal Halide Perovskitesmentioning

confidence: 99%

mentioning

confidence: 99%

mentioning

confidence: 99%

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A Strategy to Design High‐Density Nanoscale Devices utilizing Vapor Deposition of Metal Halide Perovskite Materials

2017

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“…[42][43][44][45] However, OIP-based photovoltaic device exhibits difference in current-voltage curve (hysteresis) under forward and reverse scanning directions which is undesirable in optoelectronic applications. [47][48][49][50][51][52][53][54][55][56][57][58][59][60][61] Moreover, OIPs are photosensitive, and this trait can be exploited in device with photon recording functionality. [47][48][49][50][51][52][53][54][55][56][57][58][59][60][61] Moreover, OIPs are photosensitive, and this trait can be exploited in device with photon recording functionality.…”

mentioning

confidence: 99%

Recent Advances in Memory Devices with Hybrid Materials

Hwang

Lee

2018

Adv Elect Materials

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Increasing demands for information‐storage capacity and for miniaturization of memory cells have driven exploration of new‐generation data storage devices, because the conventional Si‐based memory technology is approaching its fundamental physical limits. Hybrid materials and novel device structure may lead to a paradigm shift toward memory devices that have high density, multifunctionality, and low power consumption. Here, the structure and operation mechanism of resistive switching memory devices are described, then recent advances in hybrid materials (e.g., graphene‐based polymer composites, organic–inorganic hybrid perovskite materials) for fabrication of these devices are summarized. How to increase the ON/OFF ratio and the density of memories, and to decrease programming voltage by selecting appropriate active materials, and engineering the active layers, are also demonstrated. Finally, the current challenges and future directions in memory devices based on hybrid materials are summarized.

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Smart Textile Optoelectronics for Human‐Interfaced Logic Systems

Peng,

Li,

Tao

et al. 2023

Adv Funct Materials

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Textiles with a freedom of form factor, unlimited scalability, and high programmability provide an ideal platform for constructing wearable optoelectronic systems. The emerging wearable technologies, like artificial intelligence and Internet of Things, have driven the development of textile optoelectronics from simple functional blocks to sophisticated logic systems, offering a seamless, breathable, and programmable on‐body platform to synergistically sense, analyze, store, and feedback information in response to complex commands. In the past few years, the creation of such smart textile optoelectronics‐based logic systems is boosted by nanomaterial science and manufacturing integration technologies and has revolutionized human–machine interaction paradigms in numerous emerging fields. Herein, in this review, the recent progress of smart textile optoelectronics for human‐interfaced logic systems is timely summarized. This review begins with a concise discussion about the wearability evaluation and integration consideration of textile optoelectronic devices. Then, important breakthroughs in human‐interfaced logic systems based on smart textile optoelectronics are demonstrated by highlighting their representative device, working principle, and application scenarios. Finally, the existing challenges and potential directions in the field of textile optoelectronics‐integrated logic systems are analyzed.

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First Fiber‐Shaped Non‐Volatile Memory Device Based on Hybrid Organic–Inorganic Perovskite

Cited by 63 publications

References 37 publications

A Strategy to Design High‐Density Nanoscale Devices utilizing Vapor Deposition of Metal Halide Perovskite Materials

A Strategy to Design High‐Density Nanoscale Devices utilizing Vapor Deposition of Metal Halide Perovskite Materials

Recent Advances in Memory Devices with Hybrid Materials

Smart Textile Optoelectronics for Human‐Interfaced Logic Systems

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