2009
DOI: 10.1109/tim.2008.2008466
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First Direct Comparison of a Cryocooler-Based Josephson Voltage Standard System at 10 V

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Cited by 13 publications
(11 citation statements)
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“…At this higher temperature, the cryocooler used here has a capacity in excess of 1 watt with only an aircooled compressor running on a single-phase power outlet. Conventional Josephson Voltage Standard (CJVS) circuits have also been successfully implemented on cryocoolers [5][6]. Since no dc current is required to generate quantized voltages with the hysteretic JJs of CJVS circuits, only the microwave bias contributes to the power dissipation on the chip, typically less than 100 mW.…”
Section: Cryocoolermentioning
confidence: 99%
“…At this higher temperature, the cryocooler used here has a capacity in excess of 1 watt with only an aircooled compressor running on a single-phase power outlet. Conventional Josephson Voltage Standard (CJVS) circuits have also been successfully implemented on cryocoolers [5][6]. Since no dc current is required to generate quantized voltages with the hysteretic JJs of CJVS circuits, only the microwave bias contributes to the power dissipation on the chip, typically less than 100 mW.…”
Section: Cryocoolermentioning
confidence: 99%
“…The superconducting electrodes of the junctions are made of niobium and thus have to be operated below 9.1 K. Liquid helium is used as a cryogen in most apparatus, although some very good results have been obtained with cryocooler-based systems where the temperature set point can be higher than the equilibrium temperature of liquid helium [18,30]. For those JVSs, the array and its leads are permanently thermally anchored and therefore do not offer any flexibility for changing parameters such as in the 'floating mode' of the array from the ground potential or the change of the probe immersion to modify the RF signal propagation and/or thermal EMFs.…”
Section: Cryogenic Operating Temperature and Magnetic Shieldmentioning
confidence: 99%
“…The first 1 V array had a total of 1474 PbInAu/PbO x /PbAu (B) SIS jj driven at 90 GHz [30]. Junction materials such as NbN/MgO/NbN (C) [31] and Nb/AlO x /Nb (D) [32][33][34][35][36][37][38][39][40][41] were successfully used as well (cf table 2).…”
Section: Materials and Geometrymentioning
confidence: 99%