First demonstration of sub-0.25μm-width emitter InP-DHBTs with <400 GHz f/sub t/ and <400 GHz f/sub max/

Abstract

We report performance of sub-0.25pm emitter-width InPflnGaAsilnP DHBTs. These are the smallest emitterwidth Ill-V devices reported to date. Measured ft'fmax performance of 406GHd423GHz is the first ever reported for a sub-0.25pm emitter-width DHBT and among the fastest for any DHBTs. With the peakf; and fmw. performance occurring at I, = 8mA (Vch-1.2Sv), this is the lowest power consumption DHBT ever reported with state of the art cutoff frequencies. The as-patterned emitter contact metal width for these devices was 0.25pm and the width of the emitter at the emitter-base junction is less than 0.25pm owing to undercutting of the underlying emitter semiconductor. When comparing with 0.4pm emitter width DHBTs, we find that 0.4pm device has the higher measured f,, 4 2 0 G H z , due to the lower emitter resistance for that emitter layout. Fmsx was highest for the 0.2Spm emitter devices due to lower hasecollector mesa capacitance, Ca, which results from the reduced mesa width. We find this behavior to be consistent with scaling tradeoffs in the design of ultra-fast DHBTs.

Beyond the gene chip

“…InP [37] high-electron mobility transistors (HEMTs), but still inferior to reports on SiGe [20] and InP/InGaAs [11,15,43] heterojunction bipolar transistors (HBTs). On the other hand, in MOS technology, f max , which can be shown to be proportional to the gate width, W, generally lags behind f T , as illustrated in Figure 2b.…”

MMICs and Mixed-Signal ICs Based on III/V Technology for Highest Frequencies and Data Rates

“…In contrast to most recent reports [9], [18], [19], based on aggressively scaled HBT technologies, our fabrication process uses only standard manufacturing techniques, including i-line stepper lithography and selective dry/wet etching [20]. Briefly, the fabrication process relies on self-aligned baseemitter contacts and benzocyclobutene (BCB) for device passivation and planarization.…”

InP DHBT-based ICs for 100 Gbit/s data transmission

“…In contrast to most recent reports [4,8,9], based on aggressively scaled technologies (less than 0.5 µm), our fabrication process still relies only on standard manufacturing techniques, including i-line stepper lithography and selective dry/wet etching. A detailed description of the device and IC manufacturing technology was reported in [10].…”