First Demonstration of High-Power GaN-on-Silicon Transistors at 40 GHz

Medjdoub, Farid; Zégaoui, M.; Grimbert, B.; Ducatteau, D.; Rolland, N.; Rolland, P.A.

doi:10.1109/led.2012.2198192

Cited by 78 publications

(41 citation statements)

References 15 publications

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“…Recently, remarkable results have been obtained on silicon substrate [4]- [6]. Silicon substrates offer an interesting alternative to silicon carbide through their low cost and their large area availability [7].…”

Section: Introductionmentioning

confidence: 99%

Optimization of ${\rm Al}_{0.29}{\rm Ga}_{0.71}{\rm N}/{\rm GaN}$ High Electron Mobility Heterostructures for High-Power/Frequency Performances

Rennesson

Lecourt

Defrance

et al. 2013

IEEE Trans. Electron Devices

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In this paper, we propose to optimize Al 0.29 Ga 0.71 N/GaN heterostructures on silicon substrate to obtain high electron mobility transistors featuring highpower/frequency performances. The polarization electric fields are engineered by varying the layer thicknesses of the cap and the barrier, and by changing the type of buffer (GaN or AlGaN). The aim of this paper is to find the best tradeoff between the active layer thickness reduction and the achievement of a reasonable drain current to satisfy the requirements for high performances. The optimum heterostructure device presents an output power density of 1.5 W/mm at 40 GHz, among the best reported on silicon substrate.Index Terms-AlGaN/GaN, high electron mobility transistor (HEMT), Ka-band, millimeter-wave transistor, power density.

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Section: Introductionmentioning

confidence: 99%

Optimization of ${\rm Al}_{0.29}{\rm Ga}_{0.71}{\rm N}/{\rm GaN}$ High Electron Mobility Heterostructures for High-Power/Frequency Performances

Rennesson

Lecourt

Defrance

et al. 2013

IEEE Trans. Electron Devices

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“…Recently, we have developed in this frame a novel technology based on an AlN/GaN/AlGaN-on-Si double heterostructure. It was demonstrated that a low leakage current, a high transconductance, and an extremely high current density can be achieved simultaneously using this double heterostructure [1][2][3][4][5]. Furthermore, as can be seen in Fig.…”

Section: Introductionmentioning

confidence: 76%

High PAE high reliability AlN/GaN double heterostructure

Medjdoub

Zégaoui

Linge

et al. 2015

Solid-State Electronics

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“…Thanks to improvements in the epitaxial growth and the fabrication processes, the operating frequency and output power steadily increased with time [1,2,3]. At W-band, impressive output powers have been reported for MMIC amplifiers based on GaN HEMTs grown SiC [4].…”

Section: Introductionmentioning

confidence: 99%

<inline-formula> <tex-math notation="LaTeX">$W$ </tex-math> </inline-formula>-Band MMIC Amplifiers Based on AlInN/GaN HEMTs Grown on Silicon

Marti

Lugani

Carlin

et al. 2016

IEEE Electron Device Lett.

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We demonstrate W-Band MMIC amplifiers based on AlInN/GaN HEMTs grown on Silicon. Our MMIC process was fully characterized to 110 GHz and a process design kit (PDK) generated to enable circuit design. A fabricated two-stage amplifier with an output device width of 100 µm shows a saturated output power of 18.3 dBm and a gain of 8.2 dB at 94 GHz with input/output return losses of -10 dB or better from 90 to 100 GHz. A simulation model confirmed by experimental data revealed that performance is limited by current collapse and that a doubling of output power could be possible by resolving collapse limitations, showing the considerable potential of GaN-on-Si HEMT technology for low-cost millimeter-wave power electronic applications. Index Terms-AlInN/GaN-on-Si, HEMTs, MMIC, multistage amplifiers, W-band.

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First Demonstration of High-Power GaN-on-Silicon Transistors at 40 GHz

Cited by 78 publications

References 15 publications

Optimization of ${\rm Al}_{0.29}{\rm Ga}_{0.71}{\rm N}/{\rm GaN}$ High Electron Mobility Heterostructures for High-Power/Frequency Performances

Optimization of ${\rm Al}_{0.29}{\rm Ga}_{0.71}{\rm N}/{\rm GaN}$ High Electron Mobility Heterostructures for High-Power/Frequency Performances

High PAE high reliability AlN/GaN double heterostructure

<inline-formula> <tex-math notation="LaTeX">$W$ </tex-math> </inline-formula>-Band MMIC Amplifiers Based on AlInN/GaN HEMTs Grown on Silicon

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