First Demonstration of a Two-Tier Pixelated Avalanche Sensor for Charged Particle Detection

Pancheri, Lucio; Ficorella, A.; Brogi, P.; Collazuol, G.; Betta, G.-F. Dalla; Marrocchesi, P. S.; Morsani, F.; Ratti, L.; Savoy-Navarro, A.; Sulaj, A.

doi:10.1109/jeds.2017.2737778

Cited by 25 publications

(13 citation statements)

References 25 publications

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“…As shown in the figures, remarkably different values of breakdown voltage were found among the DUTs, from 16.6 to 18.4 V, although much smaller variations were detected among different arrays in the same chip. In the different distributions, the standard deviation, ranging from 10 to 30 mV, is comparable with that already measured in SPADs with similar structure and fabricated with the same technology as the devices tested in this work [10]. Monte Carlo simulations indicate that the switching threshold of the N1 inverter is distributed around the nominal 1 V value with a standard deviation below 4 mV, therefore negligibly affecting the breakdown voltage measurements.…”

Section: Resultssupporting

confidence: 81%

“…Vertical integration of two SPAD layers has been proposed as a DCR mitigation strategy [9]. More recently, in the frame of the APiX2/ ASAP collaboration, funded by the Italian Institute for Nuclear Physics (INFN), the first prototype of a two-tier SPAD detector, providing a coincidence signal when a particle simultaneously strikes two overlapping sensors and significantly reducing the DCR, was successfully tested [10]. While radiation resistance in SPADs is in general poor, with non negligible increase in DCR already at 1 MeV neutron equivalent fluences in the order of 10 9 cm −2 in devices with a 200 μm 3 active volume [11], the coincidence signal approach is expected to mitigate the effect of the radiation susceptibility of the individual layer on the radiation tolerance performance of the bi-layered system.…”

Section: Introductionmentioning

confidence: 99%

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Layered CMOS SPADs for Low Noise Detection of Charged Particles

et al. 2021

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This paper reports the characterization of SPAD arrays fabricated in a 150 nm CMOS technology in view of applications to the detection of charged particles. The test vehicle contains SPADs with different active area and operated with different quenching techniques, either passive or active. The set of devices under test (DUTs) consists of single-tier chips, about 30 mm2 in area, with dual-tier structures where two chips are face-to-face bump bonded to each other. In the dual-layer structure obtained in this way, the coincidence signal between overlapping SPAD pairs is read out, with a beneficial impact on the dark count noise performance. The DUT characterization was mainly focused on studying the breakdown voltage in the single-layer arrays and the dark count rate (DCR), measured in different working conditions, in both the single- and the dual-layer structures. Comparison between the DCR performance of the two configurations clearly emphasizes the advantage of the coincidence readout architecture.

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Section: Resultssupporting

confidence: 81%

Section: Introductionmentioning

confidence: 99%

Layered CMOS SPADs for Low Noise Detection of Charged Particles

et al. 2021

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“…Within this technology, it is possible to develop new digital avalanche pixel structures, which provide a direct access to each pixel. The avalanche pixel image sensors and the avalanche pixel tracking sensors use this technology for low photon flux and ionizing radiation, respectively [ 16 , 17 ]. The application of CMOS SPAD sensor solutions to digital SiPM was demonstrated among others in the 800 nm [ 10 ] and 350 nm [ 18 ].…”

Section: Introductionmentioning

confidence: 99%

Application of CMOS Technology to Silicon Photomultiplier Sensors

D’Ascenzo

Zhang

Xie

2017

Sensors

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We use the 180 nm GLOBALFOUNDRIES (GF) BCDLite CMOS process for the production of a silicon photomultiplier prototype. We study the main characteristics of the developed sensor in comparison with commercial SiPMs obtained in custom technologies and other SiPMs developed with CMOS-compatible processes. We support our discussion with a transient modeling of the detection process of the silicon photomultiplier as well as with a series of static and dynamic experimental measurements in dark and illuminated environments.

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“…The INFN in collaboration with multiple universities developed a BSI 3D PDC for charged particle detection in the APiX2 experiment (note that it is not designed for visible light measurement). Compared to the other 3D PDCs presented in this section, the particularity of this detector is the use of SPADs on both the top and bottom layer of the 3D stack ( Figure 6 ) [ 89 , 90 ]. Each pixel of the detector is composed of two vertically aligned SPAD to exploit the coincidence between them to discriminate between a dark count and the detection of charged particles.…”

Section: Review Of 3d Pdcmentioning

confidence: 99%

3D Photon-To-Digital Converter for Radiation Instrumentation: Motivation and Future Works

Pratte

Nolet

Parent

et al. 2021

Sensors

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Analog and digital SiPMs have revolutionized the field of radiation instrumentation by replacing both avalanche photodiodes and photomultiplier tubes in many applications. However, multiple applications require greater performance than the current SiPMs are capable of, for example timing resolution for time-of-flight positron emission tomography and time-of-flight computed tomography, and mitigation of the large output capacitance of SiPM array for large-scale time projection chambers for liquid argon and liquid xenon experiments. In this contribution, the case will be made that 3D photon-to-digital converters, also known as 3D digital SiPMs, have a potentially superior performance over analog and 2D digital SiPMs. A review of 3D photon-to-digital converters is presented along with various applications where they can make a difference, such as time-of-flight medical imaging systems and low-background experiments in noble liquids. Finally, a review of the key design choices that must be made to obtain an optimized 3D photon-to-digital converter for radiation instrumentation, more specifically the single-photon avalanche diode array, the CMOS technology, the quenching circuit, the time-to-digital converter, the digital signal processing and the system level integration, are discussed in detail.

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First Demonstration of a Two-Tier Pixelated Avalanche Sensor for Charged Particle Detection

Cited by 25 publications

References 25 publications

Layered CMOS SPADs for Low Noise Detection of Charged Particles

Layered CMOS SPADs for Low Noise Detection of Charged Particles

Application of CMOS Technology to Silicon Photomultiplier Sensors

3D Photon-To-Digital Converter for Radiation Instrumentation: Motivation and Future Works

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