First demonstration of a 331-beam SEM

Riedesel, C.; Müller, Ingmar; Kaufmann, N.; Adolf, Alain; Kämmer, N.; Fritz, Hermann M.; Eberle, Anna Lena; Zeidler, D.

doi:10.1117/12.2528795

Cited by 4 publications

(4 citation statements)

References 2 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Each secondary electron signal is lead to a dedicated secondary electron detector. The number of beams can be increased without changing the primary design; a 331 beam version has subsequently been developed, 61 though it is not yet commercially available.…”

Section: Imaging Of Larger Biological Volumesmentioning

confidence: 99%

How innovations in methodology offer new prospects for volume electron microscopy

Kievits

Lane

Carroll

et al. 2022

Journal of Microscopy

View full text Add to dashboard Cite

Detailed knowledge of biological structure has been key in understanding biology at several levels of organisation, from organs to cells and proteins. Volume electron microscopy (volume EM) provides high resolution 3D structural information about tissues on the nanometre scale. However, the throughput rate of conventional electron microscopes has limited the volume size and number of samples that can be imaged. Recent improvements in methodology are currently driving a revolution in volume EM, making possible the structural imaging of whole organs and small organisms. In turn, these recent developments in image acquisition have created or stressed bottlenecks in other parts of the pipeline, like sample preparation, image analysis and data management. While the progress in image analysis is stunning due to the advent of automatic segmentation and server-based annotation tools, several challenges remain. Here we discuss recent trends in volume EM, emerging methods for increasing throughput and implications for sample preparation, image analysis and data management.

show abstract

Section: Imaging Of Larger Biological Volumesmentioning

confidence: 99%

How innovations in methodology offer new prospects for volume electron microscopy

Kievits

Lane

Carroll

et al. 2022

Journal of Microscopy

View full text Add to dashboard Cite

show abstract

“…A multi-beam scanning electron microscope with 331 electron beams was successful applied. This multi-beam scanning electron microscope method will be able to meet the throughput requirements of future semiconductor applications [413,414]. Critical dimension testing is an important part of the IC front-end process.…”

Section: Future Scanning Electron Microscope (Sem) For Nano Analysismentioning

confidence: 99%

State of the Art and Future Perspectives in Advanced CMOS Technology

et al. 2020

View full text Add to dashboard Cite

The international technology roadmap of semiconductors (ITRS) is approaching the historical end point and we observe that the semiconductor industry is driving complementary metal oxide semiconductor (CMOS) further towards unknown zones. Today’s transistors with 3D structure and integrated advanced strain engineering differ radically from the original planar 2D ones due to the scaling down of the gate and source/drain regions according to Moore’s law. This article presents a review of new architectures, simulation methods, and process technology for nano-scale transistors on the approach to the end of ITRS technology. The discussions cover innovative methods, challenges and difficulties in device processing, as well as new metrology techniques that may appear in the near future.

show abstract

“…( Utke et al, 2008 ; Huth et al, 2018 ). EBID technology currently achieves vertical growth rates of hundreds of nanometers per second ( Winkler et al, 2018 ) and can improve processing efficiency through several methods: optimizations of gas injection systems (GIS) ( Friedli and Utke, 2009 ), deposition at low temperatures ( Bresin et al, 2013 ), and simultaneous deposition of multiple beams ( Riedesel et al, 2019 ). A variety of 3D geometries can be prepared by this method, as shown in Figure 7 .…”

Section: Bionic Nanostructuresmentioning

confidence: 99%